Electron-level dynamics in the presence of impurities and the Ruijsenaars-Schneider model

The dynamic equations for the energy level of a finite system with impurities are shown to be equivalent to the rational Ruijsenaars-Schneider system. The action, which is simultaneously the generating function of the Bäcklund canonical transformation for this system, is calculated. Various variants of statistical averaging of the energy-level distribution are discussed.     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

Composition of the Cobalt Sulfide Coating after Its Electrochemical Reduction

X-ray photoelectrom spectroscopy was used to study the composition of the initial and electrochemically reduced cobalt coating formed by the adsorption procedure involving treatment of a carbon glass electrode in a solution of Co(II) ammine complexes, hydrolytic washing in water, and conversion to sulfide in Na₂S solution.     

Efficient discretization of pressure‐correction equations on non‐orthogonal grids

An alternative discretization of pressure‐correction equations within pressure‐correction schemes for the solution of the incompressible Navier–Stokes equations is introduced, which improves the convergence and robustness properties of such schemes for non‐orthogonal grids. As against standard approaches, where the non‐orthogonal terms usually are just neglected, the approach allows for a simplification of the pressure‐correction equation to correspond to 5‐point or 7‐point computational molecules in two or three dimensions, respectively, but still incorporates the effects of non‐orthogonality. As a result a wide range (including rather high values) of underrelaxation factors can be used, resulting in an increased overall performance of the underlying pressure‐correction schemes. Within this context, a second issue of the paper is the investigation of the accuracy to which the pressure‐correction equation should be solved in each pressure‐correction iteration. The scheme is investigated for standard test cases and, in order to show its applicability to practical flow problems, for a more complex configuration of a micro heat exchanger. Copyright © 2003 John Wiley & Sons, Ltd.     

Exchange of stability and finite-dimensional dynamics in a bifurcation problem with marginally stable continuous spectrum

We consider solutions bifurcating from a spatially homogeneous equilibrium under the assumption that the associated linearization possesses continuous spectrum up to the imaginary axis, for all values of the bifurcation parameter, and that a real eigenvalue crosses the imaginary axis. For a model we investigate the nonlinear stability of the trivial solution with respect to spatially localized perturbations, prove the occurrence of a pitchfork bifurcation of equilibria and the nonlinear stability of the bifurcating equilibria, again with respect to spatially localized perturbations.     

Optical fractionation of an ensemble of impurity molecules with respect to the magnitude of the piezochromic effect

A method of hole burning in the 0-0 band of the impurity-absorption spectra of polymers and glasses is suggested. This method is selective not only with respect to the transition energy, but also with respect to the magnitude of the piezochromic effect. It is shown that, in combination with the modulation of the wavelength of probe radiation, this method makes it possible to determine the contribution of the impurity molecules with a specified magnitude of the piezochromic effect to the total absorption and luminescence of a sample. This circumstance allows one to study experimentally the correlation of the piezochromic effect with other characteristics of impurity molecules.     

The Fermi Level Pinning in Semiconductors (Interphase Boundaries,Clusters, and Radiation Modification)

The original results are presented, and the current status of the Fermi level pinning in semiconductors is reviewed for different physical phenomena (interphase boundaries, semiconductor clusters, and radiation modification of semiconductors).     

PDE with Random Coefficients and Euclidean Field Theory

In this paper a new proof of an identity of Giacomin, Olla, and Spohn is given. The identity relates the 2 point correlation function of a Euclidean field theory to the expectation of the Green's function for a pde with random coefficients. The Euclidean field theory is assumed to have convex potential. An inequality of Brascamp and Lieb therefore implies Gaussian bounds on the Fourier transform of the 2 point correlation function. By an application of results from random pde, the previously mentioned identity implies pointwise Gaussian bounds on the 2 point correlation function.