An invariance of geometric mean with respect to Lagrangian means

The invariance of the geometric mean G with respect to the Lagrangian mean-type mapping (Lf,Lg), i.e. the equation G○(Lf,Lg)=G, is considered. We show that the functions f and g must be of high class regularity. This fact allows to reduce the problem to a differential equation and determine the second derivatives of the generators f and g.     

Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

The energy levels of neutral anion (V_A) and cation (V_C) vacancies and antisite defects are calculated for the anion C_A and cation A_C sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be E_av ^abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of V_A, V_C and antisite C_A, A_C defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007.     

Langevin description of the charge distribution of fragments originating from the fission of excited nuclei

The charge distribution of fragments originatingfrom the fission of the ²³⁶U compound nucleus is calculated within a stochastic approach based on Langevin equations. The elongation coordinate, the neck-thickness coordinate, and the charge-asymmetry coordinate are chosen as collective variables. The friction parameter of the charge mode is calculated on the basis of two nuclear-viscosity mechanisms, that of one-body and that of two-body dissipation. It is shown that the Langevin approach is applicable to studying isobaric distributions. In addition, the charge distribution in question is studied as a function of the excitation energy of the compound nucleus and as a function of the coefficient of two-body viscosity.     

III-V compound semiconductor (001) surfaces

There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry. Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002     

Adsorption of nonionic surfactant triton X-100 on solids from aqueous and nonaqueous solutions

The adsorption of nonionic surfactant Triton X-100 on quartz sand and methylated quartz sand from water and toluene was investigated by means of spectrophotometry, the radiotracer technique, and wetting angle measurements.     

First synthesis of magnesacyclopentadienes from acetylenes by treatment with BuMgHlg in the presence of Zr complexes

Treatment of internal acetylenes and allenes with BuMgHlg (Hlg = Cl, Br) in the presence of Cp₂ZrCl₂ selectively leads to the formation of substituted magnesacyclopenta-2,4-dienes and alkylidenemagnesacyclopentenes.