Ranges of low-energy heavy ions in beryllium, boron, carbon, and silicon

Based on a theory of the passage of low-energy, heavy ions through matter, simple analytical expressions are obtained for calculating the average projected ranges of the ions and the rms deviations of the projected ranges. The theoretical and experimental ranges of heavy ions with atomic numbers 29⩽Z ₁⩽83 in targets of Be, B, C, and Si are compared. The theory is found to be in good agreement with experiment. Zh. Tekh. Fiz. 68, 33–36 (September 1998)     

Rotational bands in 181Ta

High-spin states in ¹⁸¹Ta have been studied via the ¹⁷⁶Yb(¹¹B,α2n) reaction at 52 MeV using the PEX array and at 57 MeV using the NORDBALL array, with α-particle detection. The previously known, K^π=(7/2)⁺ ground state band and K^π=(9/2)⁻ band have been extended to spins (29/2)⁺ and (31/2)⁻, respectively. Two new one-quasiparticle bands, the K^π=(5/2)⁺ band built on the known (5/2)⁺ isomer and a K^π=((1/2)⁻) band have been observed. Two other rotational bands with three-quasiparticle structure, K^π=(15/2)⁻ and ((19/2)⁺ with π(7/2)[404]ν²(1/2)[510](9/2)[624] and π(9/2)[514]ν²(1/2)[510](9/2)[624] configurations, respectively, have been newly observed. The half-life of the K^π=((19/2)⁺) bandhead which decays to the head of the (15/2)⁻ band has been measured to be 140(36) ns. However, transitions from the ((19/2)⁺) state to the (15/2)⁻ band have not been observed. Received: 26 August 1998     

Light-induced evaporation and condensation growth of aerosol particles

We analyze the possibility of resonant optical radiation inducing evaporation and condensation growth of aerosol particles suspended in a vapor-gas mixture. The molecules of the vapor absorb radiation selectively as to velocity. We examine the Knudsen regime, in which the particle radius is much smaller than the mean free path of the molecules. Zh. éksp. Teor. Fiz. 113, 1036–1047 (March 1998)     

Thickness dependence of exciton absorption in pure GaAs crystals at the “prequantum” limit

The optical absorption of GaAs crystals with thicknesses d=0.4−4.4 μm is measured in the exciton-polariton resonance region at a temperature of 1.7 K. As the thickness is reduced, both a broadening of the exciton line and increased absorption with a negligible Stark shift are observed. The way the absorption spectra vary with crystal thickness is examined in terms of a competition between two regions for light-exciton interactions in the crystal: in the field of surface charges and electric-field free. Fiz. Tverd. Tela (St. Petersburg) 40, 869–871 (May 1998)     

Thermal effects and anomalies in the low-temperature plasticity of crystals

This paper discusses theoretically the mechanism that causes the temperature dependences of the yield point and yield stress, along with their rate coefficients, to deviate from behavior characteristic of thermally activated plastic strain at low temperatures (<30 K). At this time the existence of such deviations, e.g., anomalous decreases in the values of these characteristics in this temperature range, is explained by arguing that the process whereby dislocations overcome local barriers has inertia. It is shown that the observed anomalies can be caused by the development of thermal instability in the plastic strain at low temperatures. In contrast to inertia-related effects, thermal effects allow us to explain the plasticity of crystals at low temperatures without contradiction and within the framework of a single mechanism, including the unstable, discontinuous character of plastic strain that is characteristic of these temperatures. Fiz. Tverd. Tela (St. Petersburg) 40, 684–689 (April 1998)     

Excitons in ZnP2 crystals in the electric field of a Schottky barrier

A study is made of the effect of electric fields on the exciton states of β-ZnP₂ crystals (T=77 K) in structures with Schottky barriers formed by depositing semitransparent electrically-conducting InSnO₂ films on the crystal surface. The observed changes in the exciton optical reflection spectra when an electrical potential is applied to a barrier are explained by the shift and broadening of the exciton level caused by the Stark effect. The experimental data are compared with calculations based on a theory of exciton optical reflection from planar spatially nonuniform structures. Fiz. Tverd. Tela (St. Petersburg) 40, 884–886 (May 1998)     

Magnetic phases of FexV1−x S and their electronic structure

A study has been made of the Fe_xV_1−x S solid solutions with 0<x<0.5. For the compounds with x>0.1, x-ray diffraction analysis discloses a V₅S₈ superstructure. Samples with x>0.1 are magnetically ordered at room temperature. The concentration dependences of resistivity and magnetization exhibit sharp peaks for x=0.1 and x=0.2, respectively. The main features of the structure and electronic properties have been qualitatively explained in terms of the three-band exciton-insulator model, and the maxima in resistivity and magnetization are assigned to the formation of localized magnetic moments with S=1, which become delocalized with increasing x. Fiz. Tverd. Tela (St. Petersburg) 40, 1890–1893 (October 1998)