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691.
Ab initio methods have been used to study the lowest-lying electronic states of the SiCN radical, which has two stable linear isomers in its electronic ground state, SiCN and SiNC. Vertical excitation energies and oscillator strengths have been computed for a number of states lying up to 8 eV. The geometries of the lowest-lying doublet and quartet states have been determined. The lowest-lying excited doublet state of SiNC (12Σ+, 4.0 eV) arises from a HOMO–LUMO excitation (3π → 10σ), although the 12Δ state (9σ → 3π) is very close in energy. In the case of the SiCN isomer the lowest excited state is 12Δ, which arises from an excitation from the highest occupied σ orbital into the HOMO (9σ → 3π) and lies 3.6 eV above the ground state. SiCN should present very strong absorptions at 4.9 and 6.1 eV whereas SiNC should have relatively strong absorptions in the region of 5.7–5.9 eV. The smallest adiabatic energy gaps with respect to the ground state of SiNC and SiCN are very close (about 2.8 eV) and the excited state is the same 12A′, which has angular equilibrium geometries for both isomers. We have determined accurate values for enthalpies of formation of the two linear doublet forms and . 相似文献
692.
Cesocene [Cp3Cs2]− and thallocene [Cp3Tl2]− triple-deckers have been recently synthesized. The X-ray structure analysis in solid state phase shows that both compounds have a strong bent structure, Cp centroid–M–Cp´ centroid (M=Cs or Tl) angles are 115.6° and 134.2°, respectively. In this work we report the theoretical study of these new compounds using Gaussian 94 at B3LYP level, with a 6-31G* basis for all atoms, except Cs and Tl, for which a LANL2DZ basis set is considered. Our results show that in gas phase, thallocene presents a bent structure while cesocene does not. However, using a force field method, we prove that in solid state phase the cesocene becomes bent due to the interaction between neighbors, in agreement with experimental data. 相似文献
693.
694.