用于脉冲功率装置测量的混合式高压分压器

为准确测量脉冲放电电压,提出了固液混合式高压分压器的原理与结构,并进行了标定和实验测试。用简化模型分析了分压器系统的理想响应条件,讨论了两级分压的衰减特性,提出了控制误差的方法。通过负载标定,得到分压器脉冲电压频率响应大于2.9 MHz,最长脉冲宽度40 s,分压比(或衰减系数)为2.60 kV/V,测量误差小于5%。该高压分压器具有造价低、制作易,同时适于ns到s级脉冲电压的测量等优点,可以在实验室中得到应用。     

纵磁结构真空灭弧室电磁场及电弧运动特性

为了了解纵向磁场下的电弧运动过程,建立了真空灭弧室的3维仿真模型。采用PIC模拟方法对12 kV灭弧室内的电磁场、电弧运动特性进行计算仿真。通过改变触头间距、屏蔽罩尺寸和触头开槽宽度,研究了灭弧室内的电场、磁场分布;对不同触头间距下随时间变化的电弧运动过程和触头表面的电弧分布情况进行了模拟计算。计算结果表明:在真空灭弧室中适当设置屏蔽罩,可有效改善灭弧室内的电场分布;触头铜基上的开槽宽度对磁场会产生影响,宽度越大,磁场强度越大。     

板条增益介质波前畸变诊断方法

对波前重构算法中的区域法进行了改进,使其能够应用于板条增益介质的波前畸变诊断。利用该方法对47块Nd: YAG板条增益介质沿厚度方向波前畸变进行测量,指出镀膜和加工等环节对增益介质的波前畸变可能造成的影响。按照波前畸变峰谷（PV）值对测量结果进行了统计,结果表明:增益介质造成的静态波前畸变参差不齐,测量样本中静态畸变PV值最多可达5 m以上,且仅有4.1%的增益介质静态畸变PV值小于1 m。通过选取某些增益介质使之级联,测量其组合波前畸变,发现在系统中使用两块波面互补的增益介质有助于减小系统的静态波前畸变。     

原子荧光光谱法测定饲料添加剂中的汞

建立了原子荧光光谱法测定硫酸盐型饲料添加剂中汞的方法,讨论了共存离子的干扰情况。在最佳实验条件下.方法的检出限达到了0.0096ng/mL,加标回收率在97.2%—109.7%之间,相对标准偏差为1.03%,被分析的硫酸盐型饲料添加剂中的共存离子对汞的测定基本无干扰。方法可用于硫酸盐型饲料添加剂中的汞的测定。     

A characterization of generalized derivations of JSL algebras

Let AlgL be a J-subspace lattice algebra on a Banach space X and M be an operator in AlgL. We prove that if δ : AlgL → B(X) is a linear mapping satisfying δ(AB) = δ(A)B + Aδ(B)for all A, B ∈ AlgL with AMB = 0, then δ is a generalized derivation. This result can be applied to atomic Boolean subspace lattice algebras and pentagon subspace lattice algebras.     

数字全息用于光波衍射传播理论教学研究

数字全息技术是基于传统光学全息原理,借助于光电探测和数字处理技术,通过单次曝光记录和再现物光场的振幅和相位信息,近年来被广泛研究和应用.将数字全息应用于光波衍射传播理论教学中,不仅能够使学生在学习过程中形象、直观的理解光波衍射传播理论,而且能够通过编程计算完成数字全息图的数值再现,锻炼他们的知识运用能力,从而拓宽专业知识面、了解科学的发展前沿.     

氟苯类化合物19F NMR化学位移的计算

提出了计算氟苯类化合物¹⁹F NMR化学位移的公式：δ_cal（¹⁹F）=-113.5+Δo+Δm+Δp+C, 结合最小二乘法通过线性回归得到了20种取代基参数, 计算结果以160种氟苯类化合物的263个¹⁹F NMR化学位移数据为样本点作回归检验,置信度为99.5%,计算值与实验值的平均偏差为0.628,计算值与实验值的标准偏差为4.720,约有93.2%的¹⁹F NMR化学位移计算值的计算误差<7.0（相对误差<0.7%）.     

关于可列非齐次马氏链的广义C-强遍历性

马氏链遍历性理论在生物,数值计算,信息理论,自动控制,近代物理和公用事业中的服务系统等众多领域都有着广泛的应用,马氏链的C-强遍历性是马氏链遍历性理论的重要内容.本文给出了马氏链C-强遍历性的一个推广,首先给出了在可列状态空间取值的非齐次马氏链的广义C-强遍历性和广义一致C-强遍历性的概念,然后研究这两种遍历性成立的充分条件.     

Dynamic control of retrieval contrast in a Λ-type atomic system

We propose an efficient scheme for optimizing the optical memory of a sequence of signal light pulses in a system of ultracold atoms in Λ configuration. The memory procedure consists of write-in, storage, and retrieval phases. By applying a weak microwave field in the storage stage, additional phase-dependent terms are included, and the contrast of the output signal pulses can be dynamically controlled (enhanced or suppressed) through manipulating the relative phase φ between optical and microwave fields. Our numerical analysis shows that the contrast is enhanced to the most extent when φ=1.5π. In addition, the contrast is in proportion to the Rabi frequency of the microwave field with a certain relative phase.     

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.