Measurements of the cross section for e(+)e(-) --> hadrons at center-of-mass energies from 2 to 5 GeV

We report values of R = sigma(e(+)e(-)-->hadrons)/sigma(e(+)e(-)-->mu(+)mu(-)) for 85 center-of-mass energies between 2 and 5 GeV measured with the upgraded Beijing Spectrometer at the Beijing Electron-Positron Collider.     

SPC数据采集与处理系统

SPC数据采集与处理系统实现了SPC数据的计算机采集与处理 ,大大提高了SPC分析的效率与准确性 ,对推动目前国内SPC应用 ,提高产品质量管理水平具有重要的现实意义。本文具体介绍了SPC数据采集与处理系统的结构与组成及软件实现和处理功能。     

Series solution to the laser-ion interaction in a Raman-type configuration

The Raman interaction of a ultracold ion trapped with two travelling wave lasers is studied analytically with series solutions, in the absence of the rotating wave approximation (RWA) and without restrictions of both the Lamb-Dicke limit and the weak excitation regime. The comparison is made between our solutions and those obtained under the RWA in order to demonstrate the validity region of the RWA. As a practical example, the preparation of Schr?dinger-cat states is proposed beyond the weak excitation regime, using our calculations. Received 12 March 2001 and Received in final form 16 October 2001     

Phonon–replica transitions in InGaN/GaN quantum well structures

A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states.     

大气光通信中大气闪烁时间平滑效应研究

利用大气闪烁的时间平滑效应,增加光电探测器曝光时间是克服大气闪烁对大气光通信的瞄准、捕获、跟踪链路影响的有效途径之一.基于科尔莫戈罗夫谱,导出了弱湍流起伏区无限平面波和球面波的大气闪烁时间平滑因子的一般表达式,并且用几何光学近似得到了在大孔径和小孔径接收情况下的时间平滑因子近似表达式.在孔径远大于菲涅耳区尺度时,平面波和球面波的时间平滑因子的近似表达式与精确表达式的误差分别小于6%和3%.分析结果表明,孔径越小,时间平滑效应越显著,并且菲涅耳区尺度对时间平滑效应影响的程度也随着孔径的增加而减弱.     

气相传输平衡技术制备LiGaO2薄膜

为获得与GaN薄膜晶格失配小的衬底材料,报道了利用气相传输平衡技术(VTE)在(100)-βGa2O3单晶衬底上制备高度[001]取向LiGaO2薄膜的方法。经过X射线衍射分析表明得到的薄膜是由单相LiGaO2组成。利用扫描电镜(SEM)观察表面形貌,发现经气相传输平衡技术处理得到的薄膜表面形貌主要受温度的影响,表面晶粒尺寸随温度上升而增大。而X射线衍射测试表明随着温度上升,所得到的薄膜也从多晶向单晶化转变。在经过退火处理后,通过观察吸收谱发现LiGaO2薄膜中产生色心,并且色心的种类与温度有关。表明可以通过气相传输平衡技术技术,在远低于LiGaO2熔点的温度制备外延GaN用(001)LiGaO2∥(100)β-Ga2O3复合衬底。     

sl玻色子体系在U(2l+1)O(2l+2)过渡区的严格解

利用无穷维李代数方法得到了相互作用sl玻色子体系在U( 2l+ 1 ) O( 2l+ 2 )过渡区的能谱和波函数的严格解 .给出了该系统Bethe假定方程的数值解法 .     

Deposition of carbon nitride films for space application

Carbon nitride thin films were prepared by electron-beam evaporation assisted with nitrogen ion bombardment and TiN/CN_x composite films were by unbalanced dc magnetron sputtering, respectively. It was found that the sputtered films were better than the evaporated films in hardness and adhesion. The experiments of atomic oxygen action, cold welding, friction and wearing were emphasized, and the results proved that the sputtered TiN/CN_x composite films were suitable for space application.     

Partial wave scattering cross sectionsfor He--HBr collision

A new anisotropic potential is fitted to {\it ab initio} data. The close-coupling approach is utilized to calculate state-to-state rotational excitation partial wave cross sections for elastic and inelastic collisions of He atom with HBr molecule based on the fitted potential. The calculation is performed separately at the incident energies: 75, 100 and 200~meV.The tendency of the elastic and inelastic rotational excitation partial wave cross sections varying with total angular quantum number $J$ is obtained.     

基于(火积)理论的“+”形高导热构形通道实验研究

基于构形理论和■理论,对"+"形高导热通道的方形构造体开展导热实验研究,并对不同优化目标和不同高导热通道布置形式下的构造体导热性能进行比较.结果表明:对于"+"形高导热通道的方形构造体,实验和数值计算所得到的构造体最高温度点均位于"+"形高导热通道两分支之间,实验和数值计算所得到的构造体平均温差和■耗散率的误差均在可接受范围内,这从定性和定量的角度证明了导热构形优化结果的正确性.与"H"形高导热通道的方形构造体相比,构造体内高导热通道采用一级"+"形布置使得其导热■耗散率得到降低.■耗散率最小的一级"+"形高导热通道构造体最优构形与最大温差最小的构造体最优构形相比,前者的导热■耗散率降低了5.98%,但最大温差提高了3.57%.最大温差最小目标有助于提高构造体的热安全性,■耗散率最小目标有助于提高构造体的整体导热性能.在保证热安全性能的前提下,实际微电子器件设计中可采用■耗散率最小的构造体最优构形以提高其整体导热性能.