溶液自由基ESR谱的计算机模拟

根据溶液自由基电子自旋共振(ESR)原理,用高级BASIC语言编写了溶液自由基谱的模拟程序。自由基的ESR能级用一级近似求解,谱线的线型采用洛仑兹和高斯型的混合线型函数,程序规定体系中核自旋量子数可从1/2到7/2,不等性核的数目最多可达10组,每组中等性核的数目原则上不受限制。通过二萘嵌苯阳离子自由基和硝基苯负离子自由基谱模拟二个例子加以说明,模拟结果是满意的。     

Diffraction inhibition in two-dimensional photonic crystals

We show the existence of flat equal-frequency contour across the entire first Brillouin zone in two-dimensional photonic crystals. Under this condition, light diffraction can be inhibited. Moreover, the beam can be highly localized between two neighboring rows of the defect-free photonic crystal. Such a finding may have novel applications in light beam manipulations and on-chip integrated photonic devices.     

氧化石墨烯/壳聚糖复合薄膜材料的制备及其非线性光限幅效应的研究

石墨烯及其衍生物作为新型碳纳米结构,由于其优异的光限幅性能而受到广泛关注,但现有的工作多侧重于其在液相体系中光限幅效应及其起因研究.本文以壳聚糖为成膜基质,将氧化石墨烯(GO)与壳聚糖(CS)在液相中均匀共混后成膜,对比研究GO溶液和GO-CS复合膜的光限幅效应及其起因.结果表明在线性透过率相同的情况下,GO在固相基质中表现出比液相基质更强的光限幅效应和更弱的非线性散射.这说明不同于碳纳米管简单的非线性散射,在GO中可能存在多种非线性光学效应.     

Realization of quantum controlled-NOT gate with resonant interaction

We propose a method for realizing the quantum controlled-NOT gate with a single resonant interaction in cavity QED. Our scheme only requires a single resonant interaction between two atoms and a cavity mode. Thus the scheme is very simple and the quantum dynamics operation can be realized at a high speed, which is important in view of decoherence. In addition, we also show that the gate can be realized in the ion trap system.     

无光滤波六倍频微波信号产生的系统设计

基于两个级联偏振调制器,提出了一种高频谱纯度、稳定的六倍频微波信号产生方法。该方法通过适当调整偏振片的偏振方向、射频驱动信号电压和相位,实现无光滤波器条件下、任何波段六倍频微波信号的产生。利用Optisystem平台搭建的仿真系统,以S波段4 GHz信号为例,验证了该设计系统产生的六倍频信号质量,并分析了非理想射频驱动电压和相位对六倍频信号质量的影响,结果表明：该设计系统能产生最大光边带抑制比、射频无杂散抑制比分别为21.3,15.2 dB的六倍频微波信号;且非理想驱动电压和相位差的偏离应控制在理想值5%的范围之内。     

Laser-induced damage of Ta2O5/SiO2 narrow-band interference filters under different 1064 nm Nd:YAG laser modes

The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser.     

掺杂对CH样品Rayleigh-Taylor不稳定性增长的影响

在神光II激光装置上进行了辐射驱动不同掺杂样品的单模Rayleigh-Taylor(RT)不稳定性实验.结果显示:与纯碳氢(CH)样品相比,掺Br的CH样品的扰动更早、更快地进入非线性区,产生二次谐波,并且掺Br比例越高,CH样品扰动进入非线性区的时间越早,相同时刻扰动的二次谐波的幅度越高.这是因为密度梯度效应抑制了二次谐波的产生,掺Br比例越高,密度梯度标长越小;同时密度梯度效应还抑制三次谐波对基模增长的负反馈,造成基模具有更大的线性增长,导致线性饱和幅值大于经典值0.1λ.     

Ab initio investigation into the structural, electronic and elastic properties of AlCu2TM (TM = Ti, Zr and Hf) ternary compounds

The Al-Cu-TM (TM = transition metal) alloy system has attracted great attention for both excellent glass-forming ability and its interesting physical properties. In this work, an investigation into the crystal, electrical and elastic properties of the AlCu₂TM (TM = Ti, Zr, and Hf) compounds has been conducted by first-principles calculations based on density-functional theory. The fully relaxed structure parameters of the AlCu₂TM compounds are in good agreement with previous experimental and other theoretical results. Besides, the cohesive energies of all the AlCu₂TM compounds have been evaluated. The energy band and densities of state of these compounds are also obtained. According to the calculated single crystal elastic constants, all the compounds are mechanically stable. The polycrystalline bulk moduli, shear moduli, Young’s moduli and Poisson’s ratio have been deduced by using Voigt-Reuss-Hill (VRH) approximations. The calculated negative Cauchy pressure and ratio of bulk modulus to shear modulus indicated that the AlCu₂TM compounds are ductile materials. The Debye temperatures of the AlCu₂TM compounds decrease with increasing the TM (Ti, Zr, and Hf) atomic number.     

两个正交子能级的V型三能级系统的粒子数振荡特性

研究了线偏振脉冲光场激发下,半导体量子点中两个正交子能级上的粒子数振荡特性.利用旋转波近似方法给出了共振激发和无衰减时粒子数运动方程的解析解.引入了该系统的等效跃迁偶极矩和等效脉冲面积，并给出了其关系表达式.理论分析表明，该体系中的子能级上粒子数振荡的振幅和频率都可以通过改变激发场的偏振角和系统的初态条件进行调控. 关键词： Rabi振荡 旋转波近似 三能级系统