非简谐振动对石墨烯量子电容和热稳定性的影响

采用固体物理理论和方法,研究了单层石墨烯的量子电容和它的温度稳定性随温度和电压的变化规律,探讨原子非简谐振动对它的影响.结果表明:(1)当电压一定时,单层石墨烯的量子电容和温度稳定性系数均随温度升高发生非线性变化,电压小于2.3 V时,量子电容随温度升高而增大,温度稳定性系数随温度升高由缓慢变化到很快增大,电压高于2.3 V时,量子电容随温度升高先增大后减小,而其温度稳定性系数随温度升高由缓慢变化到很快减小.温度一定时,量子电容只在电压值为0.4～2.8 V范围内才变化较小,而电压值大于2.8 V时,量子电容迅速减小并趋于0;(2)与简谐近似相比,非简谐项会使石墨烯量子电容有所增大,且温度愈高,两者的差愈大,非简谐效应愈显著,温度为300 K时,非简谐的量子电容要比简谐近似的值大0.33%,而温度为1 000 K时,差值增大到1.47%;(3)电压在1.5～1.8 V之间,而温度低于800 K时,石墨烯量子电容的温度稳定性系数最小且不随温度而变,储能性能的温度稳定性最好;(4)非简谐项会使它的量子电容热稳定性系数比简谐近似的值增大,且增大的情况与温度有关,当温度为400 K时量子电容热...     

双轴应变调控二维单层C2X2TM（X = O, H; TM=Fe, Cr） 的多铁性研究

基于密度泛函理论的第一性原理计算,系统地研究了过渡金属原子插层的单层氧化/氢化石墨烯的磁学性质和铁电性质.在考虑了电子在位库仑作用和自旋轨道耦合作用下,得到了过渡金属Fe、Cr插层形成的C₂X₂TM二维单层膜的稳定结构以及基态磁性结构,研究了不同应变作用下C₂X₂TM的磁性、能带、铁电极化以及电子结构的变化.结果发现,对于任何应变下的C₂X₂TM其基态磁性都为手性逆时针反铁磁结构.在无应变时体系存在一个较大的离子翻转势垒,通过外加双轴应变,可有效调控体系的势垒高度和能隙,发现25%应变下C₂O₂Cr和30%应变时C₂O₂Fe单层薄膜具有与GeS等二维铁电材料相近的铁电极化和翻转势垒,这些研究结果表明C₂O₂Fe(Cr)单层薄膜是一种新型二维多铁性材料.     

均匀磁化永磁棒的磁场

本文综合运用分子电流观点及磁荷观点,系统地计算了沿轴向、横向及其它任意方向均匀磁化的有限长永磁棒在轴线上的磁场以及无限长永磁棒在全空间的磁场.     

Substrate tuned reconstructed polymerization of naphthalocyanine on Ag(110)

The linkage structures between monomers make great influence on the properties of polymers.The synthesis of some special linkage structures can be challenging,which is often overcome by employing special reaction conditions.Here,we build dihydropentalene linkage in poly-naphthalocyanine on Ag(110)surface.Scanning tunneling microscopy(STM)and non-contact atomic force microscopy(nc-AFM)measurements confirm the dihydropentalene linkage structure and a possible formation path with reconstruction steps is proposed.The controlled experiment on Ag(100)surface shows no dihydropentalene structures formed,which indicates the grooved substrate is necessary for the reconstruction.This work provides insights into the surface restricted reactions that can yield special structures in organic polymers.     

Vacuum-gap-based lumped element Josephson parametric amplifier

We propose a lumped element Josephson parametric amplifier with vacuum-gap-based capacitor.The capacitor is made of quasi-floating aluminum pad and on-chip ground.We take a fabrication process compatible with air-bridge technology,which makes our design adaptable for future on-chip integrated quantum computing system.Further engineering the input impedance,we obtain a gain above 20 dB over 162-MHz bandwidth,along with a quasi quantum-limit noise performance.This work should facilitate the development of quantum information processing and integrated superconducting circuit design.     

Bandwidth-tunable silicon nitride microring resonators

We designed a reconfigurable dual-interferometer coupled silicon nitride microring resonator.By tuning the integrated heater on interferometer's arms,the"critical coupling"bandwidth of resonant mode is continuously adjustable whose quality factor varies from 7.9×10⁴ to 1.9×10⁵ with the extinction ratio keeping higher than 25 dB.Also a variety of coupling spanning from"under-coupling"to"over-coupling"were achieved,showing the ability to tune the quality factor from 6.0×10³ to 2.3×10⁵.Our design can provide an adjustable filtering method on silicon nitride photonic chip and contribute to optimize the nonlinear process for quantum photonics and all-optical signal processing.     

Magnetic polaron-related optical properties in Ni(Ⅱ)-doped Cd S nanobelts: Implication for spin nanophotonic devices

Emissions by magnetic polarons and spin-coupled d-d transitions in diluted magnetic semiconductors(DMSs)have become a popular research field due to their unusual optical behaviors.In this work,high-quality NiI₂(Ⅱ)-doped CdS nanobelts are synthesized via chemical vapor deposition(CVD),and then characterized by scanning electron microscopy(SEM),x-ray diffraction,x-ray photoelectron spectroscopy(XPS),and Raman scattering.At low temperatures,the photoluminescence(PL)spectra of the Ni-doped nanobelts demonstrate three peaks near the band edge:the free exciton(FX)peak,the exciton magnetic polaron(EMP)peak out of ferromagnetically coupled spins coupled with FXs,and a small higher-energy peak from the interaction of antiferromagnetic coupled Ni pairs and FXs,called antiferromagnetic magnetic polarons(AMPs).With a higher Ni doping concentration,in addition to the d-d transitions of single Ni ions at 620 nm and 760 nm,two other PL peaks appear at 530 nm and 685 nm,attributed to another EMP emission and the d-d transitions of the antiferromagnetic coupled Ni²⁺-Ni²⁺pair,respectively.Furthermore,single-mode lasing at the first EMP is excited by a femtosecond laser pulse,proving a coherent bosonic lasing of the EMP condensate out of complicated states.These results show that the coupled spins play an important role in forming magnetic polaron and implementing related optical responses.     

A novel low-loss four-bit bandpass filter using RF MEMS switches

This paper details the design and simulation of a novel low-loss four-bit reconfigurable bandpass filter that integrates microelectromechanical system(MEMS)switches and comb resonators.A T-shaped reconfigurable resonator is reconfigured in a'one resonator,multiple MEMS switches'configuration and used to gate the load capacitances of comb resonators so that a multiple-frequency filtering function is realized within the 7-16 GHz frequency range.In addition,the insertion loss of the filter is less than 1.99 dB,the out-of-band rejection is more than 18.30 dB,and the group delay is less than 0.25 ns.On the other hand,the size of this novel filter is only 4.4 mm×2.5 mm×0.4 mm.Our results indicate that this MEMS reconfigurable filter,which can switch 16 central frequency bands through eight switches,achieves a low insertion loss compared to those of traditional MEMS filters.In addition,the advantages of small size are obtained while achieving high integration.     

Determination of the surface states from the ultrafast electronic states in a thermoelectric material

We reveal the electronic structure in Yb Cd₂Sb₂,a thermoelectric material,by angle-resolved photoemission spectroscopy(ARPES)and time-resolved ARPES(tr ARPES).Specifically,three bulk bands at the vicinity of the Fermi level are evidenced near the Brillouin zone center,consistent with the density functional theory(DFT)calculation.It is interesting that the spin-unpolarized bulk bands respond unexpectedly to right-and left-handed circularly polarized probe.In addition,a hole band of surface states,which is not sensitive to the polarization of the probe beam and is not expected from the DFT calculation,is identified.We find that the non-equilibrium quasiparticle recovery rate is much smaller in the surface states than that of the bulk states.Our results demonstrate that the surface states can be distinguished from the bulk ones from a view of time scale in the nonequilibrium physics.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.