In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

介质材料二次电子发射特性对微波击穿的影响

以介质填充的平行板放电结构为例,本文主要研究了介质填充后微波低气压放电和微放电的物理过程.为了探究介质材料特性对微波低气压放电和微放电阈值的影响,本文采用自主研发的二次电子发射特性测量装置,测量了7种常见介质材料的二次电子发射系数和二次电子能谱.依据二次电子发射过程中介质表面正带电的稳定条件,计算了介质材料稳态表面电位与二次电子发射系数以及能谱参数的关系.在放电结构中引入与表面电位相应的等效直流电场后,依据电子扩散模型和微放电中电子谐振条件,分别探讨了介质表面稳态表面电位的大小对微波低气压放电和微放电阈值的影响.结果表明,介质材料的二次电子发射系数以及能谱参数越大,介质材料的稳态表面电位也越大,对应的微波低气压放电和微放电阈值也越大.所得结论对于填充介质的选择有一定的理论指导价值.     

Multi-variable special polynomials using an operator ordering method

Using an operator ordering method for some commutative superposition operators, we introduce two new multi-variable special polynomials and their generating functions, and present some new operator identities and integral formulas involving the two special polynomials. Instead of calculating complicated partial differential, we use the special polynomials and their generating functions to concisely address the normalization, photocount distributions and Wigner distributions of several quantum states that can be realized physically, the results of which provide real convenience for further investigating the properties and applications of these states.     

Interpretation and quality of the tilted axis cranking approximation

Comparing with the exact solutions of the model system of one and two particles coupled to an axial rotor, the quality of the semi classical tilted axis cranking approximation is investigated. Extensive comparisons of the energies and M1 and E2 transition probabilities are carried out for the lowest bands. Very good agreement is found, except near band crossings. Various recipes to take into account finite K within the frame of the usual principal axis cranking are included into the comparison. A set of rules is suggested that permits to construct the excited bands from the cranking configurations, avoiding spurious states.     

曲率对有限曲面狭缝阵列传输特性的影响

扩展互导纳法用于研究有限曲面狭缝阵列的传输特性,分析了一维弯曲效应以及单元列数、曲率等因素对磁流分布、散射方向图及频率响应曲线的影响.结果表明,曲面张角是衡量弯曲效应的主要参数. 当曲面张角较大时(120°以上),弯曲效应显著,单元磁流分布剧烈起伏,散射方向图波束展宽且副瓣电平升高,谐振频率、传输带宽及功率透射系数等频率响应特性均发生较大变化.当曲面张角较小时(60°以下),仅边缘附近的单元磁流分布受到曲率影响,散射方向图与传输特性均接近于有限平面阵列,表明此时可近似忽略弯曲效应. 关键词： 频率选择表面 狭缝阵列 传输特性 曲率     

Separate Polarization Modes Synchronization and Synchronization Switches between Vertical-Cavity Surface-Emitting Lasers

For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate and spontaneous emission factor.     

真空紫外光激发下掺Pr3+铝酸盐的自陷激子对Pr3+发光的影响

研究了SrAl12 O19:Pr3+和Y3Al5O12(YAG):Pr3+在20K,77K和300K的真空紫外(VUV)光谱,二者除了表现出Pr3+特有的发射性质外,还产生了一种特殊的发射现象,即自陷激子(STE)发射,并且其随着稀土离子浓度和温度的降低而增强.还着重讨论了自陷激子对Pr3+发光的影响.     

蛋白石型光子晶体红外隐身材料的制备

基于光子晶体的红外隐身材料,主要采取一维层层堆叠结构和三维木堆结构等来实现对红外波段电磁波辐射性能的调控.本文报道了一种操作简易、成本低廉的光子晶体红外隐身材料制备方法.通过优化的垂直沉积法,微米级SiO_2胶体微球自组装成高质量的蛋白石型光子晶体结构.对SiO_2胶体微球进行优选,成功制备了禁带位于2.8—3.5μm,8.0—10.0μm的SiO_2胶体晶体蛋白石型光子晶体材料.该材料可改变目标相应波段的红外辐射特征,具有目标红外波段的隐身效果.