爆磁压缩发生器通过脉冲变压器对脉冲形成线充电的理论分析

 将爆磁压缩等效为电流源的方法，对爆磁压缩发生器通过脉冲变压器对脉冲形成线充电进行了理论分析，得出爆磁压缩发生器在负载上产生电流波形（简称负载电流）为直线情况和任意电流波形情况下充电电流和充电电压的表达式。分析表明变压器耦合互感与负载电流随时间变化增长率是脉冲形成线充电的两个重要参数，脉冲形成线第一个充电电压峰值与变压器的耦合互感和负载电流波形斜率成正比，负载电流波形斜率的变化可以改变充电电压峰值的时间，斜率不断增加可以延长第一个充电电压峰值时间，从而可能增加充电电压的幅值，提高爆磁压缩发生器能量的利用效率。     

A New Triterpene from the Orchid Pholidota yunnanensis

A new triterpene, 25-methylenecyclopholidonyl p-hydroxy-trans-cinnamate, was isolated from a orchid Pholidota yunnanensis. The structure elucidation and ^1H, ^13C-NMR assignments were achieved by spectral and chemical method.     

在几何和参数上表示同一条曲线的两条有理NURBS曲线的权与控制顶点之间的关系

The paper discusses the relationship between weights and control vertices of two rational NURBS curves of degree two or three with all weights larger than zero when they represent the same curve parametrically and geometrically, and gives sufficient and necessary conditions for coincidence of two rational NURBS curves in non-degeneracy case.     

Mean curvature flows and isotopy of maps between spheres

Let f be a smooth map between unit spheres of possibly different dimensions. We prove the global existence and convergence of the mean curvature flow of the graph of f under various conditions. A corollary is that any area‐decreasing map between unit spheres (of possibly different dimensions) is isotopic to a constant map. © 2004 Wiley Periodicals, Inc.     

基于改进遗传算法的布局优化子问题

本针对子问题，构造了布局子问题(关于同构布局等价类)的改进遗传算法。将该算法应用于二维布局优化子问题，数值实验表明该算法能够在很好地保持图元的邻接关系的前提下找到子问题的最优解。由于布局优化问题可分解为有限个子问题，所以利用该算法可以找到整个布局优化问题的全局最优解。     

公路货运行业政府管制的变迁

本文首先阐述了管制的概念内涵以及进行管制的必要性 ,并对影响管制的主要因素进行分析 .随后运用管制经济学和规范经济学的基本理论 ,考察公路货运业行业管制制度的变迁与管制效果 ,对管制失效的原因加以分析 .最后对加入 WTO后如何对公路运输行业进行管制加以探讨     

弥散型金属薄膜逾渗系统的临界特性

报道了一种弥散型金属薄膜逾渗系统的制备方法和研究结果。从实验发现这种新型的逾渗系统具有异常的R-I关系、三次谐波系数与独特的电流临界规律。分析表明:这些特性与此类薄膜逾渗结构随电流增大而逐渐变化的过程有关,是由沿膜横向逐渐变化的局域隧道电流(LDTC)与跳跃电导(LDHC)效应引起的。     

H2S·HOH or H2O·HSH, which is more stable in the water-hydrogen sulfide complex?

High-level ab initio calculations are carried out to study the relative stability of the two hydrogen bonded structures of water-hydrogen sulfide complex, one with water as the proton donor (A) and the other with hydrogen sulfide as the proton donor (B). The results show that structure A is considerably more stable than B at the correlated level, which is in contrast with previous results obtained from Hartree-Fock calculations.     

Effect of C layer on the structures and magnetic properties of (0 0 1)-oriented [C/CoPt]n/Ag films

CoPt/Ag and [C/CoPt]n/Ag thin films have been prepared onto the glass substrates by magnetron sputtering. We investigated the evolution of texture and magnetic properties of CoPt/Ag and [C/CoPt]n/Ag films. The results show that C-doping plays an important role in improving (0 0 1) texture, improving the order parameter S, reducing the intergrain interactions, and making the magnetization reversal mechanism more close to Stoner-Wolfarth rotational mechanism. The growth mechanism of (0 0 1) texture also seems to be related strongly to the films thickness. Our results show that the highly (0 0 1)-oriented films with ordered fct phase have a significant potential for the perpendicular media of extremely high-density recording.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.