A study on the real-time radiation dosimetry measurement system based on optically stimulated luminescence

The optically stimulated luminescent (OSL) radiation dosimeter technically surveys a wide dynamic measurement range and a high sensitivity. Optical fiber dosimeters provide capability for remote monitoring of the radiation in the locations which are difficult-to-access and hazardous. In addition, optical fiber dosimeters are immune to electrical and radio-frequency interference. In this paper, a novel remote optical fiber radiation dosimeter is described. The optical fiber dosimeter takes advantage of the charge trapping materials CaS:Ce, Sm that exhibit OSL. The measuring range of the dosimeter is from 0.1 to 100 Gy.     

One-Step Implementation of Mulitqubit Quantum Phase Gate in a Cavity QED System

An alternative protocol is proposed to implement three-qubit phase gate between photon and atoms in a high-Q bimodel optical cavity. The idea can be extended to directly implement N-qubit phase gate, and the gating time that is required to implement the protocol does not rise with increasing number of qubits. The influence of cavity decay and atomic spontaneous emission on the gate fidelity is also discussed.     

Number-Phase Quantization and Deriving Energy-Level Gap of Two LC Circuits with Mutual-Inductance

For two LC circuits with mutual-inductance, we introduce a new quantization scheme in the context of number- phase quantization through the standard Lagrangian formalism. The commutative relation between the charge operator and the magnetic flux operator is derived. Then we use the Heisenberg equation of motion to obtain the current and voltage equation across the inductance and capacity. The results clearly show how the current and voltage in a single LC circuit are affected by the circuit parameters and inductance coupling coettlcient. In addition, adopting invariant eigen-operator method the energy-level gap of the dynamic Hamiltonian which describes two LC circuits with mutual-inductance is obtained.     

Influence of Different Substrates on Laser Induced Damage Thresholds at 1064nm of Ta2O5 Films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection （AR） and high reflector （HR） substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds （LIDTs） at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters： substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.     

Fluctuation of Mesoscopic RLC Circuit at Finite Temperature

We consider the fluctuation of mesoscopic RLC circuit at finite temperature since a resistance always produces Joule heat when the circuit is working. By virtue of the thermo field dynamics and the coherent thermo state representation we show that the quantum mechanical zero-point fluctuations of both charge and current increase with the rising temperature and the resistance value.     

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment

The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N₂ are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O₂. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N₂)_O to the N atom number on O site (N_O) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N₂, the percentage content of (N₂)_O is larger than that of N_O, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O₂, the percentage content of (N₂)_O is fewer than that of N_O, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N₂ and that of ZnO:N film annealed in O₂. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N₂, this emission band is due to donor-bound exciton (D⁰X). After annealed in O₂, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A⁰X).     

A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

Employing the metal-organic chemical vapour deposition （MOCVD） technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux （BDF） and the carrier gas flux of oxygen （OCGF）. The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction （XRD） and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 20 locations of ZnQ （002） face in the XRD patterns and the E2 （high） locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.     

脉冲电晕氢等离子体370～1100nm发射光谱分析

用CCD (Charge Coupled Device)光谱仪记录并标识了脉冲电晕氢等离子体370～1100nm的发射光谱.通过与非相对论修正的氢原子能级理论计算值和标准数据库比较,巴耳末系测得5条,帕邢系测得14条.其中包括帕邢系的821.334nm(ni=99),821.838nm(nI=77),823.651nm(nI=49),826.709nm(nI=35)和834.655nm(nI=23)等.通过发射光谱线相对光强比较,656.318nm处激发最强,其次为486.050nm和844.524nm,激发最弱的为397.133nm.     

镜片颜色深浅对立体视觉影响的光谱学研究

利用紫外-可见吸收光谱技术,对红、黄、蓝三种色系中颜色深浅不同且焦度为零的眼镜片,进行了紫外-可见光吸光度的研究;并从医学角度研究比较了人配戴同一色系颜色深浅不同的镜片对立体视觉的影响。研究发现:黄、蓝两色系的镜片,深色样品和浅色样品在紫外光区吸光度基本一致;在可见光区550nm处,深色样品的吸光度大于浅色样品的吸光度。红色系的镜片,在紫外光区浅色样品吸光度高于深色样品吸光度;在可见光区550nm处,浅色样品吸光度仍然高于深色样品的吸光度。人配戴黄、蓝两色系的浅色镜片,其立体视觉优于配戴此两色系中的深色镜片;人配戴红色系的深色镜片,其立体视觉优于配戴此色系的浅色镜片。结果表明:眼镜片颜色深浅对立体视觉的影响,主要取决于人类眼睛最敏感光波550nm处镜片的吸光度,吸光度愈高,镜片对立体视觉的影响愈大。     

Er^3＋：Y2O3透明陶瓷制备及发光性质研究

以Y2O3为基质材料,掺杂不同含量的Er3 ,采用共沉淀法制备出性能良好的Er3 :Y2O3纳米粉,并将粉体在1 700℃和真空度为1×10-3Pa下烧结8 h得到Er3 :Y2O3透明陶瓷.用X射线衍射仪(D/MAX-RB)、透射电子显微镜(EM420)、自动记录分光光度计(DMR-22)、荧光分析仪(F-4500)和发射波长为980 nm的半导体激光器分别对样品的结构、形貌和发光性能进行了研究.结果表明:Er3 完全固溶于Y2O3的立方晶格中,Er3 :Y2O3粉体大小均匀,近似球形,尺寸约40～60 nm左右.Er3 :Y2O3透明陶瓷相对密度为99.8%,在长波长范围内其透光率超过60%,在波长为980 nm的激光下有两个上转换发光带,其中绿色发光中心波长位于562 nm,红色发光中心波长位于660 nm,分别对应4S3/2/2H11/2→4I15/2和4F9/2→4I15/2的跃迁;随着铒浓度的提高颜色从绿色向红色转变,Er3 的掺杂浓度不宜超过2%,超过这个范围,对材料发光强度的增强作用反而很小.