首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   171977篇
  免费   1587篇
  国内免费   510篇
化学   88728篇
晶体学   3046篇
力学   7171篇
综合类   3篇
数学   19617篇
物理学   55509篇
  2020年   1421篇
  2019年   1564篇
  2018年   1986篇
  2017年   2074篇
  2016年   3204篇
  2015年   1911篇
  2014年   3131篇
  2013年   7689篇
  2012年   5802篇
  2011年   6930篇
  2010年   5062篇
  2009年   5022篇
  2008年   6588篇
  2007年   6468篇
  2006年   6112篇
  2005年   5536篇
  2004年   5114篇
  2003年   4608篇
  2002年   4466篇
  2001年   5225篇
  2000年   3867篇
  1999年   2971篇
  1998年   2488篇
  1997年   2390篇
  1996年   2241篇
  1995年   2117篇
  1994年   2096篇
  1993年   2006篇
  1992年   2313篇
  1991年   2250篇
  1990年   2197篇
  1989年   2128篇
  1988年   2125篇
  1987年   2124篇
  1986年   2022篇
  1985年   2635篇
  1984年   2691篇
  1983年   2389篇
  1982年   2495篇
  1981年   2309篇
  1980年   2287篇
  1979年   2427篇
  1978年   2466篇
  1977年   2391篇
  1976年   2439篇
  1975年   2362篇
  1974年   2333篇
  1973年   2506篇
  1972年   1623篇
  1971年   1338篇
排序方式: 共有10000条查询结果,搜索用时 9 毫秒
31.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.  相似文献   
32.
33.
34.
35.
We generalize an analogy between rotating and stratified shear flows. This analogy is summarized in Table 1. We use this analogy in the unstable case (centrifugally unstable flow vs. convection) to compute the torque in Taylor-Couette configuration, as a function of the Reynolds number. At low Reynolds numbers, when most of the dissipation comes from the mean flow, we predict that the non-dimensional torque G = T2 L, where L is the cylinder length, scales with Reynolds number R and gap width η, G = 1.46η3/2(1 - η)-7/4 R 3/2. At larger Reynolds number, velocity fluctuations become non-negligible in the dissipation. In these regimes, there is no exact power law dependence the torque versus Reynolds. Instead, we obtain logarithmic corrections to the classical ultra-hard (exponent 2) regimes: G = 0.50 . These predictions are found to be in excellent agreement with avail-able experimental data. Predictions for scaling of velocity fluctuations are also provided. Received 7 June 2001 and Received in final form 7 December 2001  相似文献   
36.
Electrical resistivity of U3Tein4, U2Te3 (cubic) and UTe3 has been measured over temperature range 4.2–300 K. The two former compounds appear to be semimetallic conductors while the last one has semiconducting character. The results are discussed in the terms of available magnetic data.  相似文献   
37.
38.
39.
Possibilities for the control of the parameters of free-polarization decay (FPD), optical nutation, and photon echo (PE) using the dressing field are studied. Coherent transients are generated with the Stark switching technique and are detected in the radiation of the probe field polarized orthogonally to the dressing field. The evolution-operator technique is employed in the calculations. The experiments are performed at the R(4, 3) transition of the 0 ? 1 v3 13CH3F vibrational band with the radiation of a cw CO2 laser. It is theoretically and experimentally demonstrated that FPD and PE are suppressed upon an increase in the intensity of the dressing field. The observed shapes of the transient FPD and PE signals and their variations with the dressing field intensity are in qualitative agreement with the results of the calculations.  相似文献   
40.
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号