一种综合学习粒子群优化算法

针对复杂多峰函数优化,提出了一种综合学习粒子群优化算法(IELPSO)。该算法把基于超球坐标系的粒子更新和辨识、加速质量差的粒子两个策略引入基于例子学习粒子群优化算法(ELPSO)。本算法利用超球坐标操作改变粒子大小和方向,因而粒子在搜索过程中能覆盖局部极小,同时能发现最差粒子并且加速它们靠拢最优解。提出的算法与其他已有算法进行了比较,对几种典型函数的测试结果表明,IELPSO算法提高了收敛速度和精度,全局搜索能力有了显著提高。     

J/ψ核吸收新截面难以改变吸收机制的局面

将新发表的J/ψ核吸收截面输入强子和弦级联模型JPCIAE,计算了200AGeV/c的P-A,O-U,S-U和Pb-Pb最小偏畸碰撞中J/ψ压低因子并与实验作比较.结果表明:增大的新截面难以改变核吸收机制不易解释Pb-Pb碰撞J/ψ反常压低局面.     

光谱法计算机三维成象与再现系统

本文提出一种全新的计算机立体视觉新方法—光谱法三维成象与再现.文中分析了该方法的基本原理和系统结构,并推导出了获取三维面形信息的三角算法计算公式,最后给出了实验结果.结论表明,该方法作为一种全新的立体视觉方法,具有原理简洁、计算快、精度高的特点,能够对物体进行快速成象并再现物体的三维形状,且结构简单,有很强的实用性.     

Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates

Co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400℃ deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X- ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the material analysis, the magnetic behavior after hydrogenation is suggested to be induced by the enhancement of cobalt dusters.     

Improving Cu2ZnSnS4 (CZTS) solar cell performance by an ultrathin ZnO intermediate layer between CZTS absorber and Mo back contact

The effects of an ultrathin ZnO intermediate layer deposited at the CZTS/Mo interface on CZTS solar cell performance have been investigated in this work. The ZnO layer inhibits the generation of MoS₂ layer and the formation of voids in the CZTS absorber. Consequently, the incorporation of this layer reduces the series resistance and increases the shunt resistance, which boosts photovoltaic conversion efficiency from 1.13% to 4.3%. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

The transition form factors for semi-leptonic weak decays of J/ψ in QCD sum rules

Within the standard model, we investigate the semi-leptonic weak decays of J/ψ. The various form factors of J/ψ making the transition to a single charmed meson (D^(*) _(d,s)) are studied in the framework of QCD sum rules. These form factors fully determine the rates of the weak semi-leptonic decays of J/ψ and provide valuable information on non-perturbative QCD effects. Our results indicate that the decay rate of the semi-leptonic weak decay mode J/ψ→D^(*)- _s+e⁺+ν_e is at the order of 10^-10. PACS 13.20.Gd; 13.25.Gv; 11.55.Hx     

一种新型微透镜阵列成象式投影光刻系统的研究

从理论和实验两方面入手,系统地研究了微透镜阵列的形成原理和制作工艺,分析了微透镜阵列的面形结构,得到了联系微透镜阵列矢高与制作工艺参量的经验公式.并且将四片微透镜阵列耦合,形成一个深紫外光刻的1:1成象的多孔径微小光刻系统.从几何光学理论出发,分析了这个光刻系统综合成象的特点,讨论了这种光刻系统的光学性能,并给出了实验测量方法.     

Average mutual information of the random block-message ensembles for many-letters

By making use of the theoretical framework presented by Bostroem(K.J.Bostroem,LANL quant-ph/0009052),we generalize the standard quantum information theory of block messages with fixed block length to the variable one.We show that the states belonging to a sufficiently large hilbert space are the highly distinguishable states.We also consider the collection states (product states of more than one qubit state) and seek a “pretty good measurement” (PGM) with measurement vectors to improve the mutual information.The average mutual information over random block-message ensembles with variable block length n is discussed in detail.     

Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.     

Nd0.67Sr0.33MnOy(Y＜3.0)中的自旋相关电致电阻效应

用固相反应法制备系列Nd0.67Sr0.33MnOy(y=3.00-2.80)多晶样品.样品输运性质表现出自旋相关电致电阻特征.对氧含量等于化学计量样品,在测量温度范围内电阻不随负载电流变化,I-V曲线符合线性欧姆定律.对氧含量低于化学计量样品,当高于某一特征温度时,电阻变化符合线性欧姆定律;但低于这一特征温度时,电阻大小与负载电流有关,I-V曲线偏离线性规律;在绝缘体-导体相转变点附近,样品电阻随负载电流增大而迅速减小,表现出巨大电致电阻效应.对于y=2.85样品,当电流从1μA增加到30μA时,电致电阻接近80%.这种自旋相关的电致电阻行为与氧含量和界面有很大关系.