On the onset of separation in turbulent boundary layer flow over two-dimensional humps of various size

Summary The available laboratory data of turbulent boundary layer flow over two-dimensional obstacles have been examined in order to identify the parameters (such as the aspect ratio or the surface roughness) driving the onset of separation. A comparison with some linearized models suitable for atmospheric applications is also made. It results that i) the model response can be highly sensitive to the detailed shape of the obstacle; ii) the ratio between obstacle length and boundary layer thickness is relevant in determining the pressure perturbation near the surface; iii) the surface shear stress is poorly described in most cases and in particular in the obstacle wake.

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Riassunto I dati di laboratorio disponibili, relativi a strati limite turbolenti su ostacoli bidimensionali, sono stati esaminati al fine di identificare i parametri guida della separazione (quali la pendenza o la rugosità della superficie). Inoltre è stato fatto un confronto con i risultati di alcuni modelli linearizzati adatti per applicazioni atmosferiche. Ne risulta che i) la risposta del modello è molto sensibile alla forma dettagliata dell’ostacolo; ii) il rapporto fra la lunghezza dell’ostacolo e lo spessore dello strato limite turbolento incidente è importante nel determinare la perturbazione della pressione vicino alla superficie; iii) lo ?shear stress? superficiale non è riprodotto con accuratezza nella maggioranza dei casi, in particolare nella scia dell’ostacolo.

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Резюме Анализируются имеющиеся лабораторные данные по турбулентному течению в пограничном слое над двумерными препятствиями, чтобы идентифицировать параметры (такие как аспектное отношение или шероховатость поверхности), определяющие возникновение отрыва. Проводится сравнение с некоторыми линеаризованными моделями, удобными для атмосферных приложений. Получены следующие результаты: 1) модельный отклик может быть очень чувствительным к детальной форме препятствия; 2) отношение между длиной препятствия и толщиной поверхностного слоя является существенным при определении возмущения давления вблизи поверхности; 3) напряжение поверхностного сдвига плохо описывается в большинстве случаев и, в частности, в спутной струе.

     

Sodium trichloro­methane­sulfonate monohydrate

Sodium trichloro­methane­sulfonate monohydrate, Na⁺·CCl₃SO₃⁻·H₂O, crystallizes in P2₁/a with all the atoms located in general positions. The trichloro­methane­sulfonate (trichlate) anion consists of pyramidal SO₃ and CCl₃ groups connected via an S—C bond in a staggered conformation with approximate C_3v symmetry. The water mol­ecule is hydrogen bonded to the sulfonate O atoms, with one water H atom forming weak bifurcated O—H⋯O hydrogen bonds to two different trichlate ions. Two water O atoms and three O atoms from different SO₃ groups form a square‐pyramidal arrangement around the sodium ion.     

Surface-field induced interband tunneling in InAs

Metal/insulator/semiconductor junctions are prepared on degeneratep-type InAs substrates with hole concentrations ranging from 2.3×10¹⁷ cm^–3 to 2.7×10¹⁸ cm^–3. The low work function of the top metal Yb, Al, or Au and charged interface states influence a two-dimensional (2D) electron inversion layer at the InAs surface. The insulator barrier that is formed by thermal oxidation is designed sufficiently thin, so that the bias voltage applied at the metal electrode mainly drops across the depletion layer separating the electron channel from the bulk. The current-voltage (I–V) characteristics exhibit strong negative differential conductance due to interband, tunneling from the 2D subband into the 3D valence band with peak-to-valley current ratios up to 3.1, 18, and 32 at 300 K, 77 K, and 4.2 K, respectively. In agreement with a theoretical model based on coherentelastic tunneling, the form of the I–V curves resembles those of double-barrier resonant tunnel devices rather than those of 3D Esaki diodes. The series resistance is obtained from the saturation of the differential conductance dI/dV at high forward bias and from the shift of structures in d² I/dV ² arising from phonon assisted tunneling.Dedicated to G. Lautz on the occasion of his 65th birthday     

Approaches to improving critical current density of YBCO superconducting thick films deposited by electrophoresis

The irreversibility field (Hirr) of Y-based superconductor is much higher than that of Bi-based superconductor. Y-based superconductor is capable of maintaining stable electrical currents in high magnetic field and electric field, so it is a better suited mate-rial for electric-current applications. Commonly, the Y-based tapes comprise a YBCO thick film deposited on a flexible substrate, typically with an intermediate buffer layer, and an overcoat of noble metal. In this process, the interm…     

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Towards molecular-scale electronics and biomolecular self-assembly

This paper provides an overview of recent research developments in the field of nanoelectronics with organic materials such as carbon nanotubes and DNA-templated nanowires. Carbon nanotubes and gold electrodes are chemically functionalized in order to contact carbon nanotubes by self-assembly. The transport properties of these nanotubes are dominated by charging effects and display clear Coulomb blockade behaviour. A different approach towards nanoscale electronics is based on the molecular recognition properties of biomolecules such as DNA. As an example, DNA is stretched between electrodes using a molecular combing technique. A two-step metallization procedure leads to the formation of highly conductive gold nanowires.