首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   156805篇
  免费   1436篇
  国内免费   420篇
化学   84694篇
晶体学   2093篇
力学   6749篇
综合类   7篇
数学   16007篇
物理学   49111篇
  2020年   1147篇
  2019年   1224篇
  2018年   1522篇
  2017年   1490篇
  2016年   2546篇
  2015年   1647篇
  2014年   2519篇
  2013年   6534篇
  2012年   5103篇
  2011年   6492篇
  2010年   4395篇
  2009年   4391篇
  2008年   5879篇
  2007年   5968篇
  2006年   5582篇
  2005年   5194篇
  2004年   4599篇
  2003年   4026篇
  2002年   3997篇
  2001年   4370篇
  2000年   3363篇
  1999年   2624篇
  1998年   2286篇
  1997年   2227篇
  1996年   2043篇
  1995年   1931篇
  1994年   1942篇
  1993年   1778篇
  1992年   2032篇
  1991年   2170篇
  1990年   1955篇
  1989年   1948篇
  1988年   1895篇
  1987年   1799篇
  1986年   1735篇
  1985年   2254篇
  1984年   2385篇
  1983年   1940篇
  1982年   2129篇
  1981年   2016篇
  1980年   1922篇
  1979年   2088篇
  1978年   2257篇
  1977年   2130篇
  1976年   2159篇
  1975年   2068篇
  1974年   2111篇
  1973年   2093篇
  1972年   1384篇
  1971年   1235篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
81.
In different regimes of exposure of metals to pulsed laser radiation, we show the role played by the liquid-drop phase formed from the target material in a laser-induced erosion plume due to bulk vaporization, in the dynamics of this plume. For some metals, the ranges of power densities of the acting laser radiation, at which the condensed-phase particles influence the passage of laser radiation to the target surface, have been determined experimentally. The mechanism of realization of a low-threshold breakdown has been revealed.  相似文献   
82.
All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry–Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs.  相似文献   
83.
We study two-variable Engel-like relations and identities characterizing finite-dimensional solvable Lie algebras and, conjecturally, finite solvable groups and introduce some invariants of finite groups associated with such relations. Bibliography: 29 titles.  相似文献   
84.
In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.  相似文献   
85.
We derive a test problem for evaluating the ability of time-steppingmethods to preserve the statistical properties of systems inmolecular dynamics. We consider a family of deterministic systemsconsisting of a finite number of particles interacting on acompact interval. The particles are given random initial conditionsand interact through instantaneous energy- and momentum-conservingcollisions. As the number of particles, the particle density,and the mean particle speed go to infinity, the trajectory ofa tracer particle is shown to converge to a stationary Gaussianstochastic process. We approximate this system by one describedby a system of ordinary differential equations and provide numericalevidence that it converges to the same stochastic process. Wesimulate the latter system with a variety of numerical integrators,including the symplectic Euler method, a fourth-order Runge-Kuttamethod, and an energyconserving step-and-project method. Weassess the methods' ability to recapture the system's limitingstatistics and observe that symplectic Euler performs significantlybetter than the others for comparable computational expense.  相似文献   
86.
87.
Ab initio calculations showed that the tetrachlorodibenzo-para-dioxin radical cations (TCDD RCs) with a planar structure have two steady states with asymmetric dioxin cycles. The activation barriers between these states are up to 2 kcal/mole, so that the RCs may be regarded as being structurally nonrigid within the dioxin cycle. The 2,3,7,8-TCDD RC is more stable than the 1,4,6,9-TCDD RC, the energy difference being 5.2 kcal/mole. The adiabatic ionization potential of 2,3,7,8-TCDD (7.54 eV) is 0.1 eV smaller than the corresponding potential of 1,4,6,9-TCDD. These factors account for the increased hemoproteide affinity and hence increased biological activity of 2,3,7,8-TCDD.  相似文献   
88.
Organometallic compounds Cp2TiCl2, (EtC5H4)2NbCl2, and (PriC5H4)2WCl2 were assessed as additives that control polymer chain growth in the polymerization of methyl methacrylate. In the presence of compounds mentioned in amounts comparable with that of the initiator, a uniform process with no gel-effect occured and respective linear increase in the molecular weight of the polymer up to high degrees of the monomer conversion was observed.  相似文献   
89.
The {1/2, 0, 1/2} nuclear superstructure in an La0.93Sr0.07MnO3 manganite orthorhombic crystal is revealed using thermal-neutron diffraction. It is demonstrated that this superlattice belongs to the class of distortion-type structures and is directly associated with a 1/16-type ordering of Mn4+ and Mn3+ ions in a collinear ferromagnetic phase of the La0.93Sr0.07MnO3 manganite.  相似文献   
90.
The PARRNe facility has been used to produce neutron-rich isotopes 83,84Gaby the ISOL method. Their decay has been studied, and β-γ coincidence and γ-γ coincidence data were collected as a function of time. The first two excited levels in 83Ge and the first excited level in 84Ge have been measured for the first time.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号