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111.
Hirofumi Minamoto Robert Seifried Peter Eberhard Shozo Kawamura 《European Journal of Mechanics - A/Solids》2011,30(3):336-344
In machine dynamics impacts are usually common phenomena, resulting from collisions of moving bodies. Even low velocity impacts might produce high stresses in the contact region, which result in inelastic deformation. Thereby, visco-plastic materials, such as steel, show a significant increase of the yield stress with the strain rate. In machine dynamics repeated collisions occur, resulting in repeated impacts on a previously deformed contact area. Then, inelastic deformation and the resulting residual stresses produced by previous impacts have an influence on the behavior of the following impacts. Thus, the impact behavior varies with the number of impacts. This paper presents a numerical and experimental evaluation of repeated impacts with identical impact velocity up to 3 m/s, whereby the deformation history of the contact area, due to previous impacts, is included. The approach is applied to longitudinal impacts of an elastic steel sphere on a steel rod with distinct visco-plastic material behavior which is identified by Split Hopkinson Pressure Bar tests. A Finite Element analysis and experimental verification using two Laser-Doppler-Vibrometers are performed. It is shown that for an accurate impact simulation the FE model must include the visco-plastic material behavior of the steel. Further it is found that the maximal contact force, the rebound velocity and the coefficient of restitution increase with the number of impacts, while the contact duration decreases with the number of impacts. After several impacts these quantities show saturation to a constant value, indicating no significant additional inelastic deformation in the later impacts. Further, the residual stress distribution, the maximal von Mises stress distribution and the local deformation at the contact point are evaluated and a characteristic force-deformation diagram is obtained. Finally, an analysis is performed to describe the relation between maximal force and remaining crater at the contact point. 相似文献
112.
Dontchev A. L. Eberhard A. Rockafellar R. T. 《Set-Valued and Variational Analysis》2019,27(3):605-621
Set-Valued and Variational Analysis - For a Hilbert space X and a mapping $F: X\rightrightarrows X$ (potentially set-valued) that is maximal monotone locally around a pair $(\bar {x},\bar {y})$ in... 相似文献
113.
114.
Eberhard Hopf 《Mathematische Annalen》1940,117(1):764-775
Ohne Zusammenfassung 相似文献
115.
C. Kirchner V. Schwegler F. Eberhard M. Kamp K. J. Ebeling
P. Prystawko
M. Leszczynski I. Grzegory S. Porowski 《Progress in Crystal Growth and Characterization of Materials》2000,41(1-4):57-83Epitaxial growth on GaN bulk single crystal substrates sets new standards in GaN material quality. The outstanding properties provide insights into fundamental material parameters (e.g. lattice constants, exciton binding energies, etc.) with a precision not obtainable from heteroepitaxial growth on sapphire or SiC. With metalorganic vapor phase epitaxy (MOVPE) we realized unstrained GaN layers with dislocation densities about six orders of magnitude lower than in heteroepitaxy. By the use of dry etching techniques for surface preparation, an important improvement of crystal quality is achieved. Those layers reveal an exceptional optical quality as determined by a reduction of the low-temperature photoluminescence (PL) linewidth from 5 meV to 0.1 meV and a reduced X-ray diffraction (XRD) rocking curve width from 400 to 20 arcsec. As a consequence of the narrow PL linewidths, new features as, e. g. a fivefold fine structure of the donor-bound exciton line at 3.471 eV was detected. Additionally, all three free excitons as well as their excited states are visible in PL at 2 K.
Dry etching techniques for surface preparation allow morphologies of the layers suitable for device applications. We report on InGaN/GaN multi-quantum-well (MQW)_ structures as well as GaN pn- and InGaN/GaN double heterostructure light emitting diodes (LEDs) on GaN bulk single crystal substrates. Those LEDs are twice as bright as their counterparts grown on sapphire. In addition they reveal an improved high power characteristics, which is attributed to an enhanced crystal quality and an increased p-doping. 相似文献
116.
John Spiller und R. Nietzki 《Fresenius' Journal of Analytical Chemistry》1881,20(1):587-588
Ohne Zusammenfassung 相似文献
117.
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119.
John Spiller Phipson und O. L. Erdmann 《Fresenius' Journal of Analytical Chemistry》1866,5(1):224-226
Ohne Zusammenfassung 相似文献
120.