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941.
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943.
    
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We have calculated the spectral functions for a number of induced excitations near the sum-frequency generation of a bichromatic field interacting with a three-level atom in the cascade configuration. Although the two-photon spontaneous emission is electric dipole forbidden, there are induced peaks whose subnatural line widths and spectral heights depend on the intensities of the bichromatic field. At low intensities of both laser fields, the maximum heights of the induced peaks take positive, zero, and negative values, indicating that the physical processes of absorption (attenuation), dark resonance (nonabsorbing state), and stimulated emission (amplification) are likely to occur at the sum-frequency generation of the two laser fields, respectively. The derived results are graphically presented and discussed. PACS 32.80.-t; 42.50.Hz  相似文献   
948.
Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.  相似文献   
949.
The fusion evaporation reaction 122Sn(14N, 4n)132La was used to populate the high-spin states of 132La at the beam energy of 60 MeV. A new band consisting of mostly E2 transitions has been discovered. This band has the interesting links to the ground state 2- and the isomeric state 6-. A new transition of energy 351 keV connecting the low-spin states of the positive-parity band based on the πh 11/2 ⊗ νh 11/2 particle configuration, has been found. This has played a very important role in resolving the existing ambiguities and inconsistencies in the spin assignment of the band head. Received: 12 August 2002 / Accepted: 18 March 2003 / Published online: 7 May 2003  相似文献   
950.
The contribution to electrical resistance due to scattering of charge carriers by domain walls is analyzed. It is revealed that “unusual” domain walls are created by frustrations in ferromagnet-antiferromagnet multilayer magnetic structures. The thickness of an unusual domain wall is substantially less than that of a usual domain wall. It is shown that scattering of charge carriers by unusual domain walls can contribute significantly to the magnetoresistance of ferromagnet-antiferromagnet multilayer magnetic structures. An analysis of the contribution made by the Levy-Zhang mechanism to the magnetoresistance demonstrates that the initial estimate obtained for this contribution is considerably exaggerated.  相似文献   
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