任意波长云母波片的制作技术

本文给出了由已测得的云母片对6328 A激光的相位延迟,推算任意波长的延迟的几种方法。对这几种方法进行了分析、比较。根据误差讨论,确定了制作任意波长波片的方法。     

多值逻辑与多值数字运算的光学实现

提出利用光学符号代换法则实现POST代数和GALOIS代数两种基本的多值逻辑函数,并给出了Max(x,y)运算、Min(x,y)运算以及数字加法和乘法运算的实验结果。     

Fabrication of silicon microwire arrays for?photovoltaic?applications

A?novel method of combining photolithography, wet chemical etching and oxidation process was proposed to fabricate large area of silicon microwire (SiMW) arrays. The dimensions of the SiMWs can be easily controlled by photomask and etching conditions. Solar cells based on the heterojunction between SiMW and double-walled carbon nanotubes (DWNTs) were constructed. The initial test on the DWNT/SiMW shows efficiency (??) of?0.59%. By adding a few drops of HBr/B₂ electrolyte, the efficiency was improved to 1.96% with J _sc=19.2?mA/cm² and V _oc=0.35?V, FF=29.2%, showing the potential of SiMWs in photovoltaic applications.     

Light transmission properties of double-overlapped annular apertures

We investigate the light transmission properties of double-overlapped annular apertures in a silver film with the three-dimensional finite-difference time-domain method. It has been found that the transmission peaks are attributed to the localized surface plasmon resonance (LSPR) of nanocavities and the surface plasmon polaritons (SPPs) of the nanoparticles. The peaks of the LSPR are blueshifted when the overlapping distance is increased. Moreover, a Fano-type resonance appears in the transmitted spectral response with an appropriate overlapping distance, which is elucidated as the hybridization results of the SPPs of the nanoparticles. The number and position of the Fano resonance can be tuned through varying the overlapping distance and other geometric parameters.     

关于B~0→π~-~+■_衰变过程分支比的计算

通过构造适当的关联函数,计算B→π跃迁形状因子fB+π(q2),fBπ(q2)和标量形状因子f0(q2),从而就能研究轻子质量对B0→π-+ν(l=e,μ,τ)衰变过程的影响.首次分别计算B0→π-e+νe,B0→π-μ+νμ,B0→π-τ+ντ衰变过程的分支比,并发现轻子质量me,mμ可以忽略,但重轻子质量mτ不能忽略,它对分支比计算有一定的贡献.把计算结果与最近的实验数据进行比较,发现理论结果与实验数据基本符合.     

AFM analysis of piezoelectric nanogenerator based on n-diamond/n-ZnO heterojunction

We have demonstrated a high performance piezoelectric nanogenerator by scanning a diamond-coated conductive tip on ZnO nanorod arrays in an AFM system with contact-mode. About 95% ZnO nanorods generate piezoelectric current due to the excellent mechanical and electrical properties of the tip. The tip's nitrogen-doped diamond coating is the key factor to maintain effective physical contact and electrical contact to ZnO nanorods, leading to efficient piezoelectric generation. Rectifying n⁺-n heterojunction is formed when the nitrogen-doped diamond tip contacted with a ZnO nanorod, which plays an important role in accumulating and releasing piezoelectric charges of the piezoelectric nanogenerator. Our research indicates that conductive diamond film is an ideal electrode for this type of piezoelectric nanogenerator.     

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1 0 0) systems

As metal-oxide-semiconductor field-effect transistor (MOSFET) devices are shrunk to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain region. This work demonstrates a method for the formation of epitaxial NiSi₂ layers by a solid-phase reaction in Ni-P(8 nm)/Si(1 0 0) samples. The results show that the sheet resistance remained low when the samples were annealed at temperatures from 400 to 700 °C. P atoms can be regarded as diffusion barriers against the supply of Ni to the Si substrate, which caused the formation of Si-rich silicide (NiSi₂) at low temperature. Furthermore, elemental P formed a stable capping layer with O, Ni and Si during the annealing process. A uniform NiSi₂ layer with an atomically flat interface was formed by annealing at 700 °C because of the formation of a Si-Ni-P-O capping layer and a reduction in the total interface area.