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91.
92.
Morphological and chemical properties of both the surface and interface of poly(vinylidene fluoride)/poly(methyl methacrylate)-co-poly(ethyl acrylate) (PVDF/PMMA-co-PEA) blend films have been investigated before and after the samples were exposed to ultraviolet (UV) irradiation using a xenon arc lamp at 50 °C and 9% relative humidity (RH) for 7 months. Surface and interfacial morphologies were studied by atomic force microscopy (AFM). Chemical composition information was obtained by confocal Raman microscopy, attenuated total reflection-FTIR spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. Results show an enrichment of the PVDF material at the air surface, while the acrylic copolymer enriches the interface. Blends having greater than 50% mass fraction of PVDF show little change in the surface morphology after UV exposure for 7 months. However, for a lower PVDF content, blends exhibit significant degradation of PMMA-co-PEA copolymer and a much rougher surface after UV exposure. Microstructural changes in the PVDF spherulites are also observed after UV degradation. It is found that the surface and interfacial morphologies are correlated with the chemical properties.  相似文献   
93.
Laser-ablated Co-doped In2O3 thin films were fabricated under various growth conditions on R-cut Al2O3 and MgO substrates. All Co:In2O3 films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μB/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In2O3 thin films has confirmed that doping few percent of magnetic elements such as Co into In2O3 could result in a promising magnetic material.  相似文献   
94.
Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si0.2Ge0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO2 host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)  相似文献   
95.
We examine the higher-order nonclassical properties of the even and odd charge coherent states as well as proposing a scheme to generate these states whose modes can freely travel in open space. We show that the even and odd charge coherent states exhibit both higher-order antibunching and higher-order squeezing. While the two-mode higher-order antibunching occurs in any order and essentially depends on the charge number, the two-mode higher-order squeezing appears only in the even orders. We also prove that these states are genuinely entangled, and they can be generated by means of cross-Kerr media, beam splitters, phase shifts and threshold detectors. We find that the fidelity and the corresponding success probability to generate these states are dependent on the correlative parameters.  相似文献   
96.
We have measured the thickness dependence of the superconducting critical temperature, Tc(dBi)Tc(dBi), in amorphous Bi/Sb films patterned with a regular array of holes as well as nanoscale thickness variations. We find that the mean field TcTc is suppressed relative to simultaneously produced unstructured films of the same thickness. Surprisingly, however, the functional form for Tc(dBi)Tc(dBi), remains unaffected. The role of the thickness variations in suppressing TcTc is compared to the role of the holes, through parameterization of the surface, as measured through AFM/SEM and a proximity effect calculation. These results suggest that these two nanoscale modifications suppress TcTc about equally and are consistent with TcTc being determined on a microscopic length scale.  相似文献   
97.
Network structure as well as structural and compositional heterogeneities in aluminosilicate (Al2O3-2SiO2) under compression is investigated by analysis and visualization of simulation data. Structural and compositional heterogeneities are clarified through analysis of topology structure and size distribution of TO x -clusters (T = Si, Al; x = 3, 4, 5, 6) as well as OT y -clusters (y = 2, 3, 4). The TO x -cluster can be considered as TO x -grains. It appears that the structure of aluminosilicate is the mixture of TO x -grains with a different short-range order structure and this is the origin of structural heterogeneity. Regarding their composition, the OSi y - and OAl y -clusters can be considered as silica- and alumina-grains respectively, and the structure of aluminosilicate can thus be considered to be formed from silica- and alumina-grains. This results in compositional heterogeneity. Moreover, the degree of polymerization and polyamorphism as well as dynamic heterogeneity is also discussed in detail.  相似文献   
98.
Thermodynamic properties, anharmonic effects and structural determination of fcc crystals have been studied based on the theoretical and experimental Debye–Waller factors presented in terms of cumulant expansion up to the third order, thermal expansion coefficient, X-ray absorption fine structure (XAFS) spectra and their Fourier transform magnitudes. The advances in these studies are performed by the further development of the anharmonic correlated Einstein model primary only for approximating three first XAFS cumulants into the method using that all the considered theoretical and experimental XAFS parameters have been provided based on only the calculated and measured second cumulants. The obtained cumulants describe the anharmonic effects in XAFS contributing to the accurate structural determination. Numerical results for Cu are found to be in good agreement with the experimental values extracted by using the present advanced method and with those obtained by the other measurements.  相似文献   
99.
Our previous study presented up to 20% power conversion efficiency (PCE) enhancement of poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) solar cells under the Fe3O4 nanoparticles (NPs) self-assembly (SA) effect by spin coating. Fe3O4 NPs (about 11 nm hydrodynamic diameter) form a thin layer at the top interface of the light absorbing active layer, which results in the generation of PCBM rich region improving the charge transport (Zhang et al. Sol Energ Mat Sol C 160:126–133, 2017). In order to investigate the feasibility of this Fe3O4 NPs SA effect under large-scale production condition, a smooth rod was implemented to mimic roll-to-roll coating technique and yield active layers having about the same thickness as the spin-coated ones. Small angle neutron scattering and grazing incidence X-ray diffraction were employed finding out similar morphologies of the active layers by these two coating techniques. However, rod-coated solar cell’s PCE decreases with the addition of Fe3O4 NPs compared with the one without them. This is because PCBM rich region is not created at the top interface of the active layer due to the absence of Fe3O4 NPs, which is attributed to the weak convective flow and low diffusion rate. Moreover, in the rod-coated solar cells, the presence of Fe3O4 NPs causes decrease in P3HT crystallinity, thus the charge transport and the device performance. Our study confirms the role of spin coating in the Fe3O4 NPs SA effect and enables researchers to explore this finding in other polymer nanocomposite systems.  相似文献   
100.
The KTeV experiment at Fermilab has isolated a total of 132 events from the rare decay K(L)-->e+ e- mu+ mu-, with an estimated background of 0.8 events. The branching ratio of this mode is determined to be [2.69+/-0.24(stat)+/-0.12(syst)]x10(-9), with a radiative cutoff of M(2)(ee mu mu)/M(2)(K)>0.95. The first measurement using this mode of the parameter alpha from the D'Ambrosio-Isidori-Portolès (DIP) model of the K(L)gamma*gamma* vertex yields a result of -1.59+/-0.37, consistent with values obtained from other decay modes. Because of the limited statistics, no sensitivity is found to the DIP parameter beta. We use this decay mode to set limits on CP and lepton violation.  相似文献   
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