Microplasma Technology and Its Applications in Analytical Chemistry

Abstract

This review article describes some existing microplasma sources and their applications in analytical chemistry. These microplasmas mainly include direct current glow discharge (DC), microhollow-cathode discharge (MHCD) or microstructure electrode (MSE), dielectric barrier discharge (DBD), capacitively coupled microplasmas (CCμPs), miniature inductively coupled plasmas (mICPs), and microwave-induced plasmas (MIPs). The historical development and recent advances in these microplasma techniques are presented. Fundamental properties of the microplasmas, the unique features of the reduced size and volume, as well as the advantageous device structures for chemical analysis are discussed in detail, with the emphasis toward detection of gaseous samples. The analytical figures of merit obtained using these microplasmas as molecular/elemental-selective detectors for emission spectrometry and as ionization sources for mass spectrometry are also given in this review article.     

Coherent spectroscopy of a strongly driven triple quantum dot molecule

Based on a calculation model,we study the interference phenomena of serially coupled V-type and Λ-type triple quantum dots (CTQDs) driven simultaneously by a strong driving field and a weak probe field.Strongly depending on the configuration of the three-level CTQD,the probe absorption spectra,which are shown in the tunneling current,exhibit various quantum coherence properties.In the case where the two pairs of transitions of the CTQD have a small eigenfrequency difference △ω,the double-coupling effect of the driving field results in two Autler-Townes doublets and one weak Mollow triplet in one spectrum.With the value of △ω increasing,only one Autler-Townes splitting remains due to the single-coupling of the field.We also find that the effect of spontaneous emission of phonons may lead to an obvious background current,which can be used to distinguish which transition is driven by the driving field in experiment.The interesting quantum property of a CTQD revealed in our results suggests its potential applications in quantum modulators and quantum logic devices.     

Magnetic hysteresis and refrigeration capacity of Ni-Mn-Ga alloys near Martensitic transformation

This paper studies the magnetic hysteresis and refrigeration capacity of Ni-Mn-Ga alloys in detail during heating and cooling isothermal magnetisation processes. The Ni-Mn-Ga alloys show larger magnetic hysteresis when they transform from austenite to martensite, but smaller magnetic hysteresis when they transform from martensite to austenite. This behaviour is independent of either the pure Ni-Mn-Ga alloys or the alloys doped with other elements. Because of the existence of the magnetic hysteresis, the relation between the magnetic entropy change and refrigeration capacity is not simply linear. For practical consideration, magnetocaloric effect of Ni-Mn-Ga alloys should be investigated both on cooling and heating processes.     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

InOOH压致氢键对称化及其弹性性质

利用第一性原理研究了InOOH在高压下的氢键对称化行为及其对InOOH弹性等性质的影响.结果表明约在18 GPa时InOOH中的氢键发生了对称化转变,导致轴比率b/c对压力的斜率由负值变为正值;压缩弹性常数、非对角弹性常数、体积模量和纵波波速出现异常增加,如体积模量增加了20%—40%.高压下InOOH弹性性质呈现出更加明显的各向异性.常压下InOOH呈现韧性,且伴随着氢键对称化韧性异常增加.对畸变金红石型MOOH(M=Al,In,Ga,Fe,Cr)化合物在高压下的弹性性质转变与氢键性质转变的耦合规律进行了初探.     

掺钕微球的受激辐射激光和自受激拉曼散射

采用溶胶-凝胶法在SiO_2微球表面覆盖上一薄层Nd~(3+)掺杂SiO_2,并经电极放电熔融后形成表面光滑的高Q值微球.采用锥光纤将808 nm的抽运激光耦合入钕离子掺杂的高Q值微球形成回廊模,激发产生了1080—1097 nm波段受激辐射激光.由于所产生的激光有足够高的功率密度,在高Q SiO_2微球中激发产生了波长为1120—1143 nm一级自受激拉曼散射激光.推导了锥光纤掺钕微球组合的自受激拉曼散射的输出功率和阈值公式.描述了输出激光的特性:阈值、输出功率、线宽、边模抑制比.     

Q-switched operation of an in-band-pumped Ho:LuAG laser with kilohertz pulse repetition frequency

We report continuous-wave (CW) and repetitively Q-switched operation of an in-band-pumped Ho:LuAG laser at room temperature. End-pumped by a Tm:YLF solid-state laser with emission wavelength of 1.91 μm, the CW Ho:LuAG laser generated 5.4-W output at 2100.7 nm with beam quality factor of M ²～1.03 for an incident pump power of 14.1 W, corresponding to slope efficiency of 67% with respect to absorbed pump power. Up to 1.5-mJ energy per pulse at pulse repetition frequency (PRF) of 3 kHz and 4.5-W average power with FWHM pulse width of 28 ns at 5 kHz were demonstrated in repetitively Q-switched operation.     

The melting curve of CaSiO3 perovskite under lower mantle pressures

The high pressure melting curve of CaSiO₃ perovskite is simulated by using the constant temperature and pressure molecular dynamics method combined with effective pair potentials for the first time. The simulated results for the partial radial distribution function all compare well with experiment. The calculated equation of state is very successful in accurately reproducing the recent experimental data over a wide pressure range. The predicted high pressure melting curve is in good agreement with the experimental ones, and the melting curve up to the core–mantle boundary pressure, being very steep at lower pressures, rapidly flattens on increasing pressure. The present results also suggest the validity of the experimental data of Zerr and Boehler.     

二元Lennard-Jones液体的相分离过程及其扩散性质的分子动力学研究

采用分子动力学(MD)模拟方法,研究了二元体系中相分离过程、粒子的扩散系数以及相分离域尺寸大小随温度的变化规律.发现,相分离域随温度的生长过程可以分为两个阶段,分别是温度比较高的快速生长阶段和低温时的稳定生长阶段;相分离体系中系统的扩散激活能不是常数,而是一个随温度变化的函数,并且当温度高于60 K时,满足关系式E(T)=a+bT^c.讨论了组元尺寸的变化对相分离过程的影响.结果表明,随两组元中某一组元 关键词： 相分离 扩散 分子动力学模拟