具有高隔离度的双陷波超宽带多入多出天线

提出了一款具有高隔离度的双陷波超宽带多入多出（UWB MIMO）天线。该天线由两个相同的半切超宽带天线单元倒置构成。通过在天线底板刻蚀栅栏型缺陷地解耦结构,使该MIMO天线的隔离度提高至25 dB。此外,在天线半圆形辐射贴片上刻蚀两个方向相反的“L”型缝隙,实现了双陷波的功能,分别抑制了802.16无线城域网WiMAX（3.2～3.7 GHz）和WLAN（5.15～5.85 GHz）信号对天线系统的干扰。实验结果表明,该天线在3～11 GHz工作带宽内的隔离度大于25 dB,包络相关系数（ECC）小于0.004;第一个陷波频段为3.0～3.7 GHz,第二个陷波频段为5.1～5.85 GHz,有效抑制了WiMAX和WLAN的信号干扰。     

离子浓度及表面结构对岩石孔隙内水流动特性的影响

酸性环境引发的岩石孔隙表面溶解增加了孔隙内水溶液的盐离子浓度,破坏了孔隙的表面结构.本文采用分子动力学模拟的方法研究了纳米级岩石孔隙内水溶液的流动特性,分析了盐离子浓度和孔隙表面结构对水流速度分布的影响及原因.研究结果表明:纳米级岩石孔隙内的水溶液流动符合泊肃叶流动特性,流速呈"抛物线"分布;随盐离子浓度增加,水溶液内部氢键网络变得更为致密,水黏度随其呈线性增长;水溶液中离子浓度越大,孔隙表面对水流动的阻力越大,最大流速越小,速度分布的"抛物线"曲率半径越大;岩石孔隙表面结构的破坏改变了流动表面的粗糙程度,增加了孔隙表面对H2O分子的吸引力.随表面结构破坏程度的增大,水溶液在近壁区域的密度增大,流速降低;当表面破坏程度达到50%时,水溶液在近壁区域出现了明显的负边界滑移现象.     

Astrocyte and ions metabolism during epileptogenesis:A review for modeling studies

As a large group of cells in a central nervous system, astrocytes have a great influence on ion and energy metabolism in a nervous system. Disorders of neuronal ion and energy metabolism caused by impaired astrocytes play a key role in the pathogenesis of epilepsy. This paper reviews the existing computational models of epileptogenesis resulting from impaired astrocytes and presents several open perspectives with regard to ion and energy metabolism-induced epileptogenesis in a neuron-astrocyte-capillary coupled model.     

Geometric phase of an open double-quantum-dot system detected by a quantum point contact

We study theoretically the geometric phase of a double-quantum-dot(DQD) system measured by a quantum point contact(QPC) in the pure dephasing and dissipative environments, respectively. The results show that in these two environments, the coupling strength between the quantum dots has an enhanced impact on the geometric phase during a quasiperiod. This is due to the fact that the expansion of the width of the tunneling channel connecting the two quantum dots accelerates the oscillations of the electron between the quantum dots and makes the length of the evolution path longer.In addition, there is a notable near-zero region in the geometric phase because the stronger coupling between the system and the QPC freezes the electron in one quantum dot and the solid angle enclosed by the evolution path is approximately zero,which is associated with the quantum Zeno effect. For the pure dephasing environment, the geometric phase is suppressed as the dephasing rate increases which is caused only by the phase damping of the system. In the dissipative environment,the geometric phase is reduced with the increase of the relaxation rate which results from both the energy dissipation and phase damping of the system. Our results are helpful for using the geometric phase to construct the fault-tolerant quantum devices based on quantum dot systems in quantum information.     

Time-dependent Ginzburg–Landau equations for multi-gap superconductors

We numerically solve the time-dependent Ginzburg–Landau equations for two-gap superconductors using the finite-element technique. The real-time simulation shows that at low magnetic field, the vortices in small-size samples tend to form clusters or other disorder structures. When the sample size is large, stripes appear in the pattern. These results are in good agreement with the previous experimental observations of the intriguing anomalous vortex pattern, providing a reliable theoretical basis for the future applications of multi-gap superconductors.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Improvement of high-frequency properties of Co_2FeSi Heusler films by ultrathin Ru underlayer

Heusler Co2FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency fr were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses tRufrom 0 nm to 5 nm.It is revealed that the Ru underlayers reduce the grain size of Co2FeSi,dramatically enhance the magnetic anisotropy field HK induced by the internal stress from 242 Oe(1 Oe=79.5775 A·m^-1)to 582 Oe with an increment ratio of 2.4,while a low damping coefficient remains.The result of damping implies that the continuous interface between Ru and Co2FeSi induces a large in-plane anisotropic field without introducing additional external damping.As a result,excellent high-frequency soft magnetic properties with fr up to 6.69 GHz are achieved.     

Heat conductivity and Dufour effect in the weakly ionized,magnetized, and kappa-distributed plasma

By using the generalized Boltzmann equation of transport and the first-order approximation of Chapman-Enskog expansion on the κ-distribution function, we study the thermal conductivity and Dufour effect in the weakly ionized and magnetized plasma. We show that the thermal conductivity and Dufour coefficient in the κ-distributed plasma are significantly different from those in the Maxwell-distributed plasma, and the transverse thermal conductivity and Dufour coefficient in the κ-distributed plasma are generally greater than those in the Maxwell-distributed plasma, and the Righi-Leduc coefficient and Hall Dufour coefficient in the κ-distributed plasma are also generally greater than those in the Maxwell-distributed plasma.     

关于控制算子的若干注记

Let B(H) be the set of all bounded linear operators on a Hilbert space H. An operator T∈B(H) is called dominant if (T-λ)(T-λ)^*≤M_λ²(T-λ)^*(T-λ),?λ∈C.The numerical range of T is difined by W (T) = {(Tx, x): ‖x‖ = 1, x∈H}. In Section 1 some new characteristic of dominant operators are given. If C = AB - BA, we prove that O∈W(C)^- then A is a dominart or φ-quasihy ponor-mal. In Section 2 we prove that O∈σ_e(△_A^σ) if A is a dominant, where(?), we also prove that if A∈B(H) is a norm attaining Ф-quasihyponormal, then A has a non-trivial invariant subspace. In Section 3 we discuss the closeness of the range of bounded linear operator F_AB:X→AX-XB, and prove that R(δ_A)∩{A}′∩{Aⁿ}′=0, where δ_A:X→AX-XA.     

Atmospheric oxidation chemistry of 1–methoxy 2–propyl acetate initiated by OH radicals: kinetics and mechanisms

Kinetics and mechanism of the gas-phase reaction of CH₃C(O)OCH(CH₃)CH₂OCH₃ (MPA) with OH radicals in the presence of O₂ and NO have been investigated theoretically by performing a high and reliable level of theory, viz., CCSD(T)/6-311?+?G(d,p)//BH&HLYP/6-311++G(d,p)?+?0.9335×ZPE. The calculations predict that the H-abstraction from the ?CH₂?O? position of MPA is the most facile channel, which leads to the formation of the corresponding alkoxy radicals CH₃C(O)OCH(CH₃)C(O ?)HOCH₃ under atmospheric conditions. This activated radicals CH₃C(O)OCH(CH₃)C(O ?)HOCH₃ will undergo further rearrangement, fragmentation and oxidative reactions and predominantly leads to the formation of various products (methyl formate HC(O)OCH₃ and acetic anhydride CH₃C(O)OC(O)CH₃). In the presence of water, acetic anhydride can convert into acetic acid CH₃C(O)OH via the hydrolysis reaction. The calculated total rate constants over the temperature range 263–372?K are used to derive a negative activation energy (E_a= ?5.88 kJ/mol) and an pre-exponential factor (A?=?1.78×10^?12 cm³ molecule^?1 s^?1). The obtained Arrhenius parameters presented here are in strong agreement with the experimental values. Moreover, the temperature dependence of the total rate constant over a temperature range of 263?1000?K can be described by k?=?5.60 × 10^?14×(T/298?K)^3.4×exp(1725.7?K/T) cm³ molecule^?1 s^?1.