Geometrically distributed aperiodic circular photonic crystals with broad and isotropic photonic band gaps

In this paper, a new type of circular photonic crystal (CPC) with a geometrical distribution of concentric layers is presented. A broad and isotropic photonic band gap is achieved using this geometrically distributed CPC (GCPC). Also, the influence of the number of concentric layers to the overall band gap of GCPC is studied. It is demonstrated that the band gap broadens with a red shift when the number of concentric layers is increased. The reason for the red shift of the band gap is further investigated.     

The atom-photon entanglement of a two-level system embedded in double-band photonic band edge

The entanglement of a two-level atom with its spontaneously emitted photon embedded in double-band anisotropic photonic crystal has been investigated via the method of the quantum entropy. Different from the case in an isotropic crystal or in vacuum, the entanglement has symmetrical properties and much slower entanglement rate near the two band edges. Moreover, as a result of the atom-photon bound states by the virtue of the localization around the emitting atom, the degree of the entanglement gradually increases, achieves the maximum and then sharply reduces to zero on the boundary of forbidden band gap as the atomic frequency moves from the center of the band gap to either of the band edges.     

Evidence for helical edge modes in inverted InAs/GaSb quantum wells

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence-a direct consequence of a gap opening away from the zone center.     

利用偏置磁极周期会切磁铁产生边聚焦场

 利用理论分析和数值计算的方法,研究了偏置磁极周期会切磁铁产生的、可用于带状电子束宽边聚焦的边聚焦场。结果表明:增加偏置长度,减小电子束通道宽度,增大磁极轴向长度可以在基本不改变边聚焦场在x方向上分布特性的前提下提高幅值;增大电子束通道的高度,增大磁极厚度均可以减小边聚焦场在x方向上分布曲线的曲率,但同时其幅值也会降低,该降低可利用前述方法予以补偿。在对带状电子束宽边聚焦进行束匹配时,可以先进行曲率匹配,再进行幅值匹配。在进行参数选择时,应合理选择束通道高度和磁极厚度的取值,以避免束通道内的边聚焦场在x方向上的分布出现曲率反向。     

Broadband water window supercontinuum generation with a w ＋3w/2 multicycle two-colour pulse

We propose a method to generate a high-efficiency broadband water window supercontinuum with a w ＋ 3w/2 multicycle two-colour pulse. Our results reveal that the 3w/2 laser pulse can simultaneously modulate the acceleration step and the ionization step, which not only broadens the bandwidth but also enhances the yield of the generated supercontinuum. An ultra-broadband supercontinuum from 290 eV to 555 eV covering the whole water window is generated. Using this method, we expect that an isolated 62-as pulse with a minor pre-pulse can be directly obtained.     

Geometries and electronic properties of NbnV(0, ±1) (n = 1−6) clusters studied by density-functional theory

Using density functional theory (DFT) with valence basis set LANL2TZ to study the relative stabilities and electronic properties of the most stable structures of Nb _n V^(0,?±1) (n = 1?6) clusters. The ground state structures of Nb _n V ^(0,?±1) keep the similar geometric structure as the host Nb _n clusters. The doping of vanadium atom enhances the chemical activities of Nb _n clusters. The Nb₃V and Nb₆V are more stable than other clusters. The average binding energy of charged systems (Nb _n V⁺ and Nb _n V^? clusters) are generally larger than neutral Nb _n V clusters natural population analysis shows that there are charge transfers from niobium to vanadium atoms in the small Nb_1?4V, however, for larger clusters (Nb₅V and Nb₆V), the charge transfers are from vanadium to niobium atoms. The vertical and adiabatic ionization potentials (VIP and AIP) are estimated and the vertical one is more close to experimental results.     

Phase transition behavior and piezoelectric properties of low-Li and high-Sb modified KNN based piezoceramics

(Na_0.5K_0.5)_0.975Li_0.025Nb_0.82−xSb_xTa_0.18O₃ lead-free piezoceramics were prepared by the conventional solid-state sintering method. All samples possess a pure perovskite phase, and no secondary phase could be certified. The crystal structure changes from tetragonal to pseudo-cubic with increasing amount of Sb. The ferroelectric Curie temperature (T_c) shifts to lower temperature while the tetragonal to orthorhombic phase transition temperature (T_o-t) shows no obvious change with increasing Sb⁵⁺. Enhanced piezoelectric and electromechanical properties are obtained with x=0.06: d₃₃=352 pC/N, k_p=47% and k_t=38%, showing that they could be promising candidates as lead-free piezoelectric materials.     

A 200 W diode-side-pumped CW 2 μm Tm:YAG laser with water cooling at 8°C

A water-cooled 785 nm diode-side-pumped high-power CW Tm:YAG laser system at 2 μm is reported. 200 W output power is achieved with cooling water running at 8°C. As far as we know, this is the highest output power for a diode-pumped all solid-state 2 μm Tm:YAG laser. The output corresponds to optical-to-optical conversion efficiency of 11.2%, with a slope efficiency of about 22.8%. To make the system structure simple, only deionized water is used as the coolant instead of alcohol- or glycol-water mixture or the liquid nitrogen in the reported high-power Tm rod laser experiments, which were performed at low temperature near the freezing point of water, or even below.     

Three-dimension direct writing TiO<Subscript>2</Subscript> crystalline patterns in Bi-free glass using femtosecond laser

Crystalline TiO₂ was induced three dimensionally inside Bi-free glass sample by an 800 nm, 250-kHz femtosecond laser irradiation. Micro-Raman spectra analysis indicated that the laser-induced crystals in the focal point of the laser beam were monophase TiO₂ rutile. Continuous crystalline lines were written through moving the focal point of the laser beam inside the glass. The results demonstrate that this technique is a convenient method to engrave three-dimensional patterns of crystals for fabricating integrated optical devices in transparent materials.