Field Quantization and Spontaneous Emission in Left-handed Material

Recently, research on left-handed materials （LHMs） has attracted considerable attentions. The LHMs are a kind of man-made metameterials which have negative permittivity and negative permeability. These metameterials have many novel properties such as inverse light pressure, and reverse Doppler effect, which lead to many potential applications of LHMs such as superlenses which, in principle, can achieve arbitrary subwavelength resolution. However, though the properties mentioned above are seen to be classical, the quantum phenomena in LHMs have also attracted attentions such as the modified spontaneous emission of atoms in LHME.     

新超导体MgCNi3的虚晶掺杂研究

用全势线性缀加平面波方法,考虑局域自旋密度近似研究虚晶掺杂MgCNi3的超导电性和磁性.计算了自旋极化能带结构、体弹性模量和它对压力的导数、原子磁矩 m 及其变化率.计算结果表明,对于电子掺杂的Mg1-xAlxCNi3(0≤x≤0.5), 超导电性和磁涨落随掺杂量的增加逐渐减小.空穴掺杂的Mg1-xNaxCNi3,在x＝0.12处出现铁磁相变,超导电性消失.在MgCNi3少量空穴掺杂区域(0≤x<0.12),表现为超导与磁涨落共存的不稳定状态.     

金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.     

光栅周期包含的Bragg层数对Bragg型凹面衍射光栅的影响

单个衍射光栅周期所包含的Bragg周期层数是连续Bragg齿型凹面衍射光栅的主要参数之一,该参数可改变光栅齿结构,对凹面衍射光栅的分辨力.自由光谱范围及衍射效率有重要影响.本文通过理论分析与仿真模拟,对比了4种不同层数的Bragg型凹面衍射光栅的特性参数.研究结果表明:在衍射光栅尺寸不变的情况下,改变单个光栅周期包含的Bragg周期层数不会显著提高器件主衍射级次的分辨力;单个光栅周期包含的Bragg周期层数与光栅可衍射的级次数成正相关.单周期层数的Bragg凹面衍射光栅的主衍射级次效率最高,其可衍射的级次数最少,且其他衍射级次分散的能量最少;增加单个光栅周期所包含的Bragg周期层数会降低主衍射级次的自由光谱范围.该研究对于设计低插损、高分辨率、宽工作波段的波分复用器或光栅光谱仪具有重要的指导意义.     

Structural and electronic properties of potassium-doped 1,2;8,9-dibenzopentacene superconductor: comparing with doped [7]phenacenes

Polycyclic aromatic hydrocarbons doped by metal have exhibited the potential of high temperature superconductivity. Understanding the basic properties of materials is the key to reveal the superconductivity. Here, a systemically theoretical study has been done to explore crystal structures and electronic properties of pristine and potassium-doped 1,2;8,9-dibenzopentacene, compared with [7]phenacenes case. We determined that vdW-DF2 functional is more suitable to describe the non-local interaction in a molecular crystal. Based on this functional, we predicted the crystal structures and investigated in detail the K atomic positions in a system. It was found that the intralayer doping leads to lower total energy. From the calculated formation energy, for each 1,2;8,9-dibenzopentacene molecule, the doping of two electrons is more stable under the relatively K-poor condition while the doping of four electrons is more stable under the K-rich condition. Between these two phases, the three-electron doping phase stabilises in a narrow region of K chemical potential. Combining with the electronic states at Fermi level, we analysed the reasons of superconductivity enhancement in doped 1,2;8,9-dibenzopentacene. This work further deepens the understanding of 1,2;8,9-dibenzopentacene superconductor.     

Generic preparation and entanglement detection of equal superposition states

Quantum superposition is a fundamental principle of quantum mechanics, so it is not surprising that equal superposition states (ESS) serve as powerful resources for quantum information processing. In this work, we propose a quantum circuit that creates an arbitrary dimensional ESS. The circuit construction is efficient as the number of required elementary gates scales polynomially with the number of required qubits. For experimental realization of the method, we use techniques of nuclear magnetic resonance (NMR).We have succeeded in preparing a 9-dimensional ESS on a 4-qubit NMR quantum register. The full tomography indicates that the fidelity of our prepared state with respect to the ideal 9-dimensional ESS is over 96%. We also prove the prepared state is pseudo-entangled by directly measuring an entanglement witness operator. Our result can be useful for the implementation of those quantum algorithms that require an ESS as an input state.     

Measurement of the mode coherence coefficients

Based on average intensity distributions at two axial positions, an experimental approach to determine the mode coherence coefficients was developed. Using this approach, investigations were carried out for a CO₂ laser with a stripe resonator. The power partitions of, and cross-correlations between, modes at different aperture widths and the dependence of the beam quality on the aperture width were studied. The measuring principle, an iterative fit method, and some experimental results are presented and discussed.     

β-环糊精与环氧氯丙烷共聚物的13C-NMR研究

¹³C NMR测定了一个系列的环氧氧丙烷与β-环糊精的共聚物,进行了谱峰归属和DEPT谱验证,实验测得2,3-丙二醇基在β-环糊精C(2)-O-位、C(3)-O-位和C(6)-O-位取代的¹³C NMR化学位移α-取代效应参数,描述了该共聚物分子链的组成和链化学结构特征.     

Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.     

1H NMR研究β-环糊精与环氧氯丙烷共聚物的反应机理和分子链结构

β-环糊精(cyclodcxtrin)与环氧氯丙烷(Epichlorohydrin)一个系列的共聚物获得,¹H NMR以D₂O或DMSO-d₆为溶剂的测定,其谱峰被归属.共聚合反应机理为以羟基和环氧基为活性中心的亲核取代.当环氧氯丙烷:β-环糊精=n ≤ 3时,聚合物分子链呈现以β-环糊精母体为中心的线状或低枝化状链结构;当n ≥ 5时,分子链出现交联网络结构.n越大(n ≤ 12),分子量越急剧增加,其交联度也越大.