首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   125篇
  免费   10篇
  国内免费   1篇
化学   57篇
力学   7篇
数学   40篇
物理学   32篇
  2022年   1篇
  2021年   1篇
  2020年   2篇
  2019年   1篇
  2018年   1篇
  2016年   5篇
  2015年   4篇
  2014年   8篇
  2013年   2篇
  2012年   12篇
  2011年   14篇
  2010年   3篇
  2009年   5篇
  2008年   5篇
  2007年   12篇
  2006年   3篇
  2005年   5篇
  2004年   3篇
  2003年   2篇
  2002年   9篇
  2001年   3篇
  2000年   1篇
  1999年   4篇
  1998年   1篇
  1996年   8篇
  1995年   2篇
  1994年   1篇
  1993年   1篇
  1992年   5篇
  1991年   1篇
  1990年   1篇
  1989年   1篇
  1988年   1篇
  1987年   1篇
  1984年   2篇
  1976年   1篇
  1965年   2篇
  1962年   1篇
  1930年   1篇
排序方式: 共有136条查询结果,搜索用时 15 毫秒
111.
112.
Helix‐constrained polypeptides have attracted great interest for modulating protein–protein interactions (PPI). It is not known which are the most effective helix‐inducing strategies for designing PPI agonists/antagonists. Cyclization linkers (X1–X5) were compared here, using circular dichroism and 2D NMR spectroscopy, for α‐helix induction in simple model pentapeptides, Ac‐cyclo(1,5)‐[X1‐Ala‐Ala‐Ala‐X5]‐NH2, in water. In this very stringent test of helix induction, a Lys1→Asp5 lactam linker conferred greatest α‐helicity, hydrocarbon and triazole linkers induced a mix of α‐ and 310‐helicity, while thio‐ and dithioether linkers produced less helicity. The lactam‐linked cyclic pentapeptide was also the most effective α‐helix nucleator attached to a 13‐residue model peptide.  相似文献   
113.
The zeros of linear combinations of orthogonal polynomials   总被引:2,自引:1,他引:1  
Let {pn} be a sequence of monic polynomials with pn of degree n, that are orthogonal with respect to a suitable Borel measure on the real line. Stieltjes showed that if m<n and x1,…,xn are the zeros of pn with x1<<xn then there are m distinct intervals f the form (xj,xj+1) each containing one zero of pm. Our main theorem proves a similar result with pm replaced by some linear combinations of p1,…,pm. The interlacing of the zeros of linear combinations of two and three adjacent orthogonal polynomials is also discussed.  相似文献   
114.
We use C. Schneider’s summation software Sigma and a method due to Andrews-Newton-Zeilberger to reprove results from [5] and [24] as well as to prove new related material. 2000 Mathematics Subject Classification Primary—41A21, 05A19, 33F10 K. Driver: Supported by NRF-Grant 2047226. H. Prodinger: Supported by NRF-Grant 2053748. C. Schneider: Supported by the Austrian Academy of Sciences, by the John Knopfmacher Research Centre for Applicable Analysis and Number Theory, and by the SFB-grant F1305 and the grant P16613-N12 of the Austrian FWF. J. A. C. Weideman: Supported by NRF-Grant FA2005032300018.  相似文献   
115.
116.
We study interlacing properties of the zeros of two types of linear combinations of Laguerre polynomials with different parameters, namely and . Proofs and numerical counterexamples are given in situations where the zeros of Rn, and Sn, respectively, interlace (or do not in general) with the zeros of , , k=n or n−1. The results we prove hold for continuous, as well as integral, shifts of the parameter α.  相似文献   
117.
Rhodium carboxylate complexes (1 mol %) catalyze the migration of electron-withdrawing groups to selectively produce 3-substituted indoles from β-substituted styryl azides. The relative order of migratorial aptitude for this transformation is ester ? amide < H < sulfonyl < benzoyl ? nitro.  相似文献   
118.
The effect of dopant cesium (Cs(I)) over a concentration range from 1 to 10 mol% on the growth process, morphology, thermal and optical properties of tri(thiourea)zinc(II) sulfate (ZTS) single crystals grown by slow evaporation solution growth technique has been investigated. Incorporation of Cs(I) into the crystal lattice was well confirmed by energy dispersive X-ray spectroscopy (EDS). The lattice parameters of the as-grown crystals were obtained by single crystal X-ray diffraction analysis. The reduction in the intensities observed in powder X-ray diffraction patterns of doped specimen and slight shifts in vibrational frequencies in fourier transform infrared spectra (FT-IR) indicate the lattice stress as a result of doping. Thermal studies reveal the purity of the material and no decomposition is observed up to the melting point. High transmittance is observed in the visible region and the cut-off λ is ~280 nm. The surface morphology of the as-grown specimens was studied by scanning electron microscopy (SEM). The second harmonic generation (SHG) efficiency of the host crystal is enhanced greatly in the presence of high concentrations of the dopant.  相似文献   
119.
The electronic and chemical structure of the metal-to-semiconductor interface was studied by photoemission spectroscopy for evaporated Cr, Ti, Al and Cu overlayers on sputter-cleaned as-deposited and thermally treated thin films of amorphous hydrogenated boron carbide (a-B(x)C:H(y)) grown by plasma-enhanced chemical vapor deposition. The films were found to contain ~10% oxygen in the bulk and to have approximate bulk stoichiometries of a-B(3)CO(0.5):H(y). Measured work functions of 4.7/4.5?eV and valence band maxima to Fermi level energy gaps of 0.80/0.66?eV for the films (as-deposited/thermally treated) led to predicted Schottky barrier heights of 1.0/0.7?eV for Cr, 1.2/0.9?eV for Ti, 1.2/0.9?eV for Al, and 0.9/0.6?eV for Cu. The Cr interface was found to contain a thick partial metal oxide layer, dominated by the wide-bandgap semiconductor Cr(2)O(3), expected to lead to an increased Schottky barrier at the junction and the formation of a space-charge region in the a-B(3)CO(0.5):H (y) layer. Analysis of the Ti interface revealed a thick layer of metal oxide, comprising metallic TiO and Ti (2)O (3), expected to decrease the barrier height. A thinner, insulating Al(2)O(3) layer was observed at the Al-to-a-B(3)CO(0.5):H(y) interface, expected to lead to tunnel junction behavior. Finally, no metal oxides or other new chemical species were evident at the Cu-to-a-B(3)CO(0.5):H(y) interface in either the core level or valence band photoemission spectra, wherein characteristic metallic Cu features were observed at very thin overlayer coverages. These results highlight the importance of thin-film bulk oxygen content on the metal-to-semiconductor junction character as well as the use of Cu as a potential Ohmic contact material for amorphous hydrogenated boron carbide semiconductor devices such as high-efficiency direct-conversion solid-state neutron detectors.  相似文献   
120.
As an alternative to the strongly reducing conditions necessary for the formation of silacyclopropanes, silylene transfer was developed as a mild, functional group tolerant method of silacyclopropanation. Complex silacyclopropanes were formed from functionalized alkenes using cyclohexane di-tert-butyl silacyclopropane, 1, as the source of t-Bu(2)Si. Di-tert-butyl silylene can be generated from 1 through the use of a catalytic amount of a metal salt. At -27 degrees C, silver triflate catalyzes the transfer of t-Bu(2)Si from 1 to mono- and disubstituted alkenes stereospecifically and diastereoselectively. In situ functionalization of silacyclopropanes with catalytic zinc bromide and methyl formate provides for an expedient one-flask synthesis of complex oxasilacyclopentanes from alkenes.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号