Multipulse interferometric frequency-resolved optical gating: real-time phase-sensitive imaging of ultrafast dynamics

We demonstrate a powerful new tool for real-time single-shot imaging of ultrafast phase shifts based on multipulse interferometric frequency-resolved optical gating that can directly measure and display ultrafast-time-scale phase shifts without computation. In addition, this technique can, with the application of interferogram analysis and iterative phase-retrievial techniques, recover the intensity and phase of three pulses in a single shot and exhibits a linear sensitivity to the pulse field in the wings.     

Reflected fourth-harmonic radiation from a centrosymmetric crystal

We present measurements of fourth-harmonic generation in reflection from the interface between two centrosymmetric media [Si(001)- SiO(2)] , using femtosecond pulses well below damage threshold. Analyses of signal amplitudes, rotational anisotropy, and sensitivity to surface roughening reveal that the surface dipole fourth-harmonic contribution dominates the bulk quadrupole contribution much more strongly than for second-harmonic generation.     

An Investigation of the N-Arylsulfonylation of 2-Azetidinones

N-Arylsulfonylation of 2-azetidinones can lead to the diastereoselective formation of oligomerization products. However, a simple increase of arylsulfonyl chloride concentration minimized oligomerization and allowed preparation of 1-arylsulfonyl-2-azetidinones in good yield.     

Femtosecond microscopy of radial energy transport in a micrometer-scale aluminum plasma excited at relativistic intensity

Using femtosecond microscopy, we observe subpicosecond transport of thermal energy radially outward from a micrometer-sized spot of an aluminum target following P-polarized excitation at >10(18) W/cm2 with a 24 fs pulse. The rapid expansion coincides with the onset of nonlocal energy transport dominated by radiation and hot electrons.     

Spatial energy estimates in dynamical problems for a semi-infinite piezoelectric beam

The behaviour of the total energy for a semi-infinite piezoelectricbeam, with uniform or variable cross-section, in dynamical conditionsis investigated. Precisely, we obtain some estimates in termsof the data for the energy of the portion of the body at distancegreater than z from the base and for its norm in L¹(0,t) (wheret is an arbitrary positive time). We obtain some estimates whichdepend on the initial data if t z/V (where V is a computablepositive material constant); if t > z/V, by using also theKorn inequality, we show that the bounds depend on all the data.Under mild hypotheses on the initial data we derive the asymptoticbehaviour of the energy as z +. All possible combinations ofboundary conditions are examined and the kind of the estimateis formally the same for all the problems whether the beam isa cylinder or not.     

Enhanced harmonic generation from expanding clusters

We report controlled enhancement of optical third harmonic generation (THG) from hydrodynamically expanding clusters of approximately 6x10(5) noble-gas atoms several hundred femtoseconds following ionization and heating by ultrashort pump pulses. This resonant enhancement is more pronounced for orthogonal than for parallel pump-probe polarizations, a consequence of faster cluster expansion along the pump polarization. Simulations show that the nonlinear susceptibility chi(3) of the individual clusters and the coherence length of the clustered plasma medium are optimized nearly simultaneously as the clusters expand, and both contribute to the observed THG enhancement. This dual enhancement mechanism may be scalable to relativistic probe intensity and to generation of high-order harmonics in the soft-x-ray regime.     

Second-harmonic spectroscopy of Ge/Si(001) and Si1-xGex(001)/Si(001)

0.9 Ge_0.1(001)/Si(001) films with SH photon energies 3.1<2hν<3.5 eV near the bulk E₁ critical point of Si(001) or Si_0.9Ge_0.1(001). Ge was deposited on Si(001) by using atomic layer epitaxy cycles with GeH₄ or Ge₂H₆ deposition at 410 K followed by hydrogen desorption. As Ge coverage increased from 0 to 2 monolayers the SH signal increased uniformly by a factor of seven with no detectable shift in the silicon E₁ resonant peak position. SH signals from Si_0.9Ge_0.1(001)/Si(001) were also stronger than those from intrinsic Si(001). Hydrogen termination of the Si_0.9Ge_0.1(001) and Ge/Si(001) surfaces strongly quenched the SH signals, which is similar to the reported trend on H/Si(001). We attribute the stronger signals from Ge-containingsurfaces to the stronger SH polarizability of asymmetric Ge-Si and Ge-Ge dimers compared to Si-Si dimers. Hydrogen termination symmetrizes all dimers, thus quenching the SH polarizability of all of the surfaces investigated. Received: 13 October 1998 / Revised version: 18 January 1999