Charge form factor of the neutron at low momentum transfer from the 2H-->(e-->,e'n)1H reaction

We report new measurements of the neutron charge form factor at low momentum transfer using quasielastic electrodisintegration of the deuteron. Longitudinally polarized electrons at an energy of 850 MeV were scattered from an isotopically pure, highly polarized deuterium gas target. The scattered electrons and coincident neutrons were measured by the Bates Large Acceptance Spectrometer Toroid (BLAST) detector. The neutron form factor ratio GEn/GMn was extracted from the beam-target vector asymmetry AedV at four-momentum transfers Q2=0.14, 0.20, 0.29, and 0.42 (GeV/c)2.     

Energy levels of paired donor impurities in SixGe1−x alloys

The dependences on alloy compositionx of the bound and resonant deep energy levels of nearest-neighbor (P,P), (As, As), and (Sb, Sb) pairs in Si _x Ge_1–x alloys are predicted. Based on these predictions, it appears likely that (P, P) and (As, As) produce at least one deep level in the gap for allx, but that (Sb, Sb) does not for anyx.     

Effects on the x-ray spectra of metals due to final-state interactions with effective barriers and shape resonances

Model calculations of X-ray absorption, emission, and photoemission spectral lineshapes are reported for intrinsic and extrinsic core excitations in metals with final-state interactions that can be represented by a central attractive potential surrounded by an effective barrier on its periphery. Some of the calculated spectra exhibit novel features: XPS lineshapes with multi-electron shake-off sidebands and features characteristic of resonances and anti-resonances, and X-ray absorption and emission spectra with (i) edges that are apparently peaked (on a moderate energy scale) when the X-ray edge singularity causes them to be, in fact, suppressed on a fine scale, (ii) edges that are markedly rounded, and (iii) gross spectral features that are influenced greatly by the electronic structure of the iniial state of the Fermi sea, and only weakly by the final-state.     

Role of surface antisite defects in the formation of heterojunctions

Fermi level pinning positions were measured for Si overlayers on cleaved, n-type GaAs and GaP substrates. The observed positions are 0.73 ± 0.1 eV and 0.98 ± 0.1 eV above the top of the substrate valence band. Theoretical calculations of the surface antisite acceptor levels predict the same chemical trend on going from GaAs to GaP. This agreement and other arguments suggest an important role for surface defects in the formation of semiconductor heterojunctions.     

Electronic states of (2 × 1) and (1 × 1) (111) surfaces of Ge,Si, diamond,GaAs and Ge on Si

The “dangling-bond” surface state dispersion curves, E(k), have been calculated for the (2 × 1) and (1× 1) (111) surfaces of Ge, Si, and diamond, for (1 × 1) GaAs, and for (2 × 1) Ge on Si. The calculations employ the sp³s1 empirical tight-binding model of Vogl et al. and the atomic relaxation of Feder et al. The surface state band gaps are in good agreement with optical-absorption and electron-energy-loss measurements for Ge and Si. For the assumed epitaxial geometry, Ge on Si is predicted to shift the dangling-bond states downward by ≈0.1 to 0.4 eV.     

Cozero-accessible points

We define a point x to be cozero-accessible if for each dense open set U, there is a cozero-set CU such that . It is shown to be independent of Martin's Axiom that there are cozero-accessible points in .     

Cosmic dimensions

Martin's Axiom for σ-centered partial orders implies that there is a cosmic space with non-coinciding dimensions.     

Core excitons in Ga-V compound semiconductors

The major chemical trends in the energies of Ga 3d core excitons in GaP, GaAs, and GaSb are accounted for by a theory which treats only the central-cell part of the electron-hole interaction.     

Atomic pseudopotentials for soft X-ray excitations

A new method for determining atomic pseudopotentials from photoemission angular distributions is proposed and applied to the soft X-ray 3p-to-continuum transitions of Ar.