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Olga Bori Timo J. Tolmunen Erik Kollberg Margaret A. Frerking 《International Journal of Infrared and Millimeter Waves》1992,13(6):799-814
The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with and HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding the the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results. 相似文献
994.
W. Knoll W. Hickel M. Sawodny J. Stumpe H. Knobloch 《Fresenius' Journal of Analytical Chemistry》1991,341(3-4):272-278
Summary We report on novel optical techniques, based on evanescent waves, for the characterization of polymer surfaces and thin films. We first describe photo-ablation studies with polysilane films investigated by surface plasmon microscopy, a technique which is particularly well-suited for ultrathin samples. Thicker films that are homogeneous enough to carry optical waveguide modes can be characterized with high lateral resolution by the recently developed waveguide microscopy. We demonstrate this for a thin film of a solid polyelectrolyte. Finally, we report on surface plasmon field-enhanced Raman-spectroscopic and -imaging investigations of ultrathin Langmuir-Blodgett-Kuhn-layers of cadmium arachidate.W. Hickel is now with HOECHST AG, Angewandte Physik, W-6230 Frankfurt 80 相似文献
995.
用电子顺磁共振方法研究了一些高温超导氧化物样品的零场非共振吸收信号和正常的ESR共振信号。认为这种方法可以作为鉴别样品进入超导态的实验判据之一。利用零场非共振吸收实验给出的下临界磁场Hc1(T)很好地遵多Hc1(T)=Hc1(0)(1-T&^2/Tc^2)。 相似文献
996.
Past cellular automata models of self-replication have always been initialized with an original copy of the structure that will replicate, and have been based on a transition function that only works for a single, specific structure. This article demonstrates for the first time that it is possible to create cellular automata models in which a self-replicating structure emerges from an initial state having a random density and distribution of individual components. These emergent self-replicating structures employ a fairly general rule set that can support the replication of structures of different sizes and their growth from smaller to larger ones. This rule set also allows “random” interactions of self-replicating structures with each other and with other structures within the cellular automata space. Systematic simulations show that emergence and growth of replicants occurs often and is essentially independent of the cellular space size, initial random pattern of components, and initial density of components, over a broad range of these parameters. The number of replicants and the total number of components they incorporate generally approach quasi-stable values with time. 相似文献
998.
用X射线衍射动力学理论,模拟计算InP衬底上InGaAs/AllnAs超晶格和InGaAs单层膜的X射线双晶摇摆曲线,计算结果表明:薄膜界面粗糙对单层膜的衍射峰和超晶格的零级衍射峰影响较小,但却明显影响单层膜衍射干涉条纹和超晶格的±1级卫星峰,随着平均界面粗糙度的增大,单层膜衍射干涉条纹强度减弱并趋于消失;超晶格的±1级卫星峰变弱并逐渐展宽,理论计算的模拟双晶摇摆曲线与超晶格实验曲线比较表明:高质量匹配In0.53Ga0.47As(85?)/Al0.4
关键词: 相似文献
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