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901.
Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr2O3 using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and bc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr2O3). A second phase, namely θ-(Al,Cr)2O3, was revealed by XRD in the sample containing 9.60 wt% Cr2O3. The structure of mullites was refined by the Rietveld method, location of Cr3+ was performed by the EPR spectroscopy. At low chromium doping level (Cr2O3 content less than ∼5 wt%) Cr3+ ions were substituted for Al3+ in the AlO6 octahedra of the mullite structure (M1 site). For higher doping level, Cr3+ ions were additionally substituted for Al3+ in the AlO6 octahedra of the second phase [θ-(Al,Cr)2O3 at 1400 °C, or α-(Al,Cr)2O3 at 1600 °C] which segregated in the system. Substitution of Cr3+ for Al3+ on M1 site in the mullite structure resulted in increase of average distances in (M1)O6 octahedron and decrease of average distances in T*O4 tetrahedron, while average distances in TO4 tetrahedron stayed almost constant.  相似文献   
902.
Within the framework of the first asymptotic approximation, a dynamic analysis is made of a frictional mechanical self-oscillating system with three degrees of freedom excited by a weak periodic force near the resonance.  相似文献   
903.
The IR finite one-loop box scalar integral with massless internal lines has been recalculated. The result is very compact, simple and valid for arbitrary values of the relevant kinematic variables. It is given in terms of only two dilogarithms and a few logarithms, all of very simple arguments. Received: 31 January 2002 / Published online: 26 April 2002  相似文献   
904.
We analyze the statistical behavior of signals in nonlinear circuits with delayed feedback in the presence of external Markovian noise. For the special class of circuits with intense phase mixing we develop an approach for the computation of the probability distributions and multitime correlation functions based on the random phase approximation. Both Gaussian and Kubo-Andersen models of external noise statistics are analyzed and the existence of the stationary (asymptotic) random process in the long-time limit is shown. We demonstrate that a nonlinear system with chaotic behavior becomes a noise amplifier with specific statistical transformation properties.  相似文献   
905.
906.
Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 41, No. 6, pp. 794–798, June, 1989.  相似文献   
907.
The objective of this paper is to investigate the role of the set of irrational numbers as the codomain of order-preserving functions defined on topological totally preordered sets. We will show that although the set of irrational numbers does not satisfy the Debreu property it is still nonetheless true that any lower (respectively, upper) semicontinuous total preorder representable by a real-valued strictly isotone function (semicontinuous or not) also admits a representation by means of a lower (respectively, upper) semicontinuous strictly isotone function that takes values in the set of irrational numbers. These results are obtained by means of a direct construction. Moreover, they can be related to Cantor’s characterization of the real line to obtain much more general results on the semicontinuous Debreu properties of a wide family of subsets of the real line.   相似文献   
908.
This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga2O3 layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm2/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH- or O2 - ions on the Ga2O3 surface shell. Using an intrinsic Ga2O3 shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O2. The GaP nanowire devices were fabricated as sensors for NO2, NH3, and H2 gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p  相似文献   
909.
Investigations of thickness induced percolation process in Ptξ-Al2O3 nano-composites were carried out using grazing angle X-ray scattering. It is shown that the morphological characteristics of the nano-scaled Pt particles change significantly within the growth transversal direction. The initially non percolated two phases Ptξ-Al2O3 nano-composites show a noteworthy tendency to a percolated morphology with a gradual transversal increase of Pt nano-particles' average diameter in addition to the increase of the Pt nano-particles' poly-dispersity. This transversal morphological evolution is followed by a percolation phenomenon of the Pt nano-particles for a thickness of about ∼119.5 nm. This transversal morphological evolution seems to corroborate far too much with a columnar growth process.  相似文献   
910.
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