O在Au(111)表面吸附的密度泛函理论研究

应用密度泛函理论，本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度，给出了覆盖度从0.11ML到1.0ML的范围内，O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位，O在fcc洞位的吸附能对覆盖度比较敏感，其值随着覆盖度的增加而减小；O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系，原因是Au表面电子向O偏移，形成表面偶极子；O—Au的相互作用形成成键态和反键态，且反键态都被占据，造成O—Au键很弱，O吸附能较小. 关键词： 表面吸附 Au(111)表面 密度泛函理论 电子特性     

Analogue of a spin flop phase transition for an array of magnetic moments with dipole interaction

In a two-dimensional array of magnetic moments with planar magnetization and relatively weak anisotropy in the basal plane, a stepwise phase transition is induced by an external magnetic field parallel to the easy axis of the system. This transition is similar to the spin flop phase transition in weakly anisotropic Heisenberg antiferromagnets with the significant difference that it is accompanied by the rearrangement of the sublattice structure of the magnet; i.e., it can be interpreted as a topological transition. The transition should manifest itself for arrays of submicron magnetic particles (magnetic dots) on nonmagnetic substrates, which have recently become the object of intensive research.     

A method for calculating invariant subspaces of symmetric hyperbolic equations

An algorithm is constructed for calculating invariant subspaces of symmetric hyperbolic systems arising in electromagnetic, acoustic, and elasticity problems. Discrete approximations are calculated for subspaces that correspond to minimal eigenvalues and smooth eigenfunctions. Difficulties related to the presence of an infinite-dimensional kernel in the differential operator are successfully handled. The efficiency of the algorithm is demonstrated using acoustics equations.     

Comparison of growth stress measurements with modelling in thin iron oxide films

High temperature oxidation of metals leads to residual stresses both in the metal and in the growing oxide. In this work, the evolution of this residual stresses is theoretically predicted in the growing oxide layers. The origin of these stresses is based on a microstructural model. Using experimental results providing from the oxidation kinetics, and an analysis proposed to describe the growth strain occurring in the thin layers, a set of equations is established allowing determining the stresses evolution with oxidation time. Then, the model is compared with experimental results obtained on both α-Fe and phosphated α-Fe, oxidised at different temperatures. Numerical data are extracted from experiments either with an asymptotic formulation or with an inverse method. These two methods give good agreement with experiments and allow extracting the model parameters.     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

Calculating Density of Molecular Liquids Using Agrawal-Thodos Equation

The correlation between the parameters of the Agrawal-Thodos equation, the fundamentalconstants of a substance are established. A modified equation is proposed, in which the minimum set of easily measurable properties of the substance is used as input data.     

Half twists and the cohomology of hypersurfaces

A Hodge structure V of weight k on which a CM field acts defines, under certain conditions, a Hodge structure of weight , its half twist. In this paper we consider hypersurfaces in projective space with a cyclic automorphism which defines an action of a cyclotomic field on a Hodge substructure in the cohomology. We determine when the half twist exists and relate it to the geometry and moduli of the hypersurfaces. We use our results to prove the existence of a Kuga-Satake correspondence for certain cubic 4-folds. Received: 25 August 2000; in final form: 8 January 2001 / Published online: 18 January 2002     

On the critical exponents of random k‐SAT

There has been much recent interest in the satisfiability of random Boolean formulas. A random k‐SAT formula is the conjunction of m random clauses, each of which is the disjunction of k literals (a variable or its negation). It is known that when the number of variables n is large, there is a sharp transition from satisfiability to unsatisfiability; in the case of 2‐SAT this happens when m/n → 1, for 3‐SAT the critical ratio is thought to be m/n ≈ 4.2. The sharpness of this transition is characterized by a critical exponent, sometimes called ν = ν_k (the smaller the value of ν the sharper the transition). Experiments have suggested that ν₃ = 1.5 ± 0.1. ν₄ = 1.25 ± 0.05, ν₅ = 1.1 ± 0.05, ν₆ = 1.05 ± 0.05, and heuristics have suggested that ν_k → 1 as k → ∞. We give here a simple proof that each of these exponents is at least 2 (provided the exponent is well defined). This result holds for each of the three standard ensembles of random k‐SAT formulas: m clauses selected uniformly at random without replacement, m clauses selected uniformly at random with replacement, and each clause selected with probability p independent of the other clauses. We also obtain similar results for q‐colorability and the appearance of a q‐core in a random graph. © 2002 Wiley Periodicals, Inc. Random Struct. Alg., 21: 182–195, 2002