Breathers in ferrimagnetic systems

Breathers in discrete nonlinear ferrimagnetic spin lattices are investigated for both easy-axis and easy-plane configurations. The region in frequency space of the formation of breathers is determined and the anticontinuum limit discussed. The monochromatic and the coloured breathers are found out numerically for different parameters and different conditions of excitations.     

Working group report: Flavor physics and model building

This is the report of flavor physics and model building working group at WHEPP-9. While activites in flavor physics have been mainly focused on B-physics, those in model building have been primarily devoted to neutrino physics. We present summary of working group discussions carried out during the workshop in the above fields, and also briefly review the progress made in some projects subsequently.     

Why chaos is rarely observed in natural populations

An attempt has been made to understand why chaotic dynamics have received poor evidential support from field studies. Our study opens up the possibility that the cause of failure might not be poor quality of data, as pointed out by earlier authors, but an ecological reality. We have designed two model food chains to examine whether there is a biological basis for the crisis. This investigation is effected with the help of a new method which we introduce at an appropriate place in the text. The fact that chaos exists in a narrow range of parametric values in both the model systems suggests that the crisis indeed has a biological origin.     

A highly selective and sensitive thorium(IV) PVC membrane electrode based on a dithio-tetraaza macrocyclic compound.

A poly(vinyl chloride)-based membrane composed of dithio-tetraaza macrocyclic compound as a neutral carrier with sodium tetraphenylborate (NaTPB) as an anion excluder and nitrobenzene (NB) as plasticizer was prepared and investigated as a Th(IV)-selective electrode. The electrode exhibits a Nernstian slope of 14.2 +/- 0.3 mV per decade over a wide concentration range (1.0 x 10(-6) to 1.0 x 10(-1) M) with a detection limit of 8.0 x 10(-7) M between pH 3.5 and 9.5. The response time of the sensor is about 10 s and it can be used over a period of 5 months without any divergence in potential. The proposed membrane sensor revealed a good selectivity for Th(IV) over a wide variety of other metal ions and proved to be a better electrode in many respects than those reported in the literature. It was successfully applied as an electrode indicator as well as in the direct determination of thorium ions in standard and real samples.     

Bounds on charged lepton mixing with exotic charged leptons

We examine the effects of mixing induced light heavy charged lepton neutral currents on the partial wave amplitude for the process l⁺l⁻ →ZZ (withl = e,μ or τ). By imposing the constraints that the amplitude should not exceed the perturbative unitarity limit at high energy (√s = Λ), we obtain bounds on light heavy charged lepton mixing parameter sin²(2θ _L ^a ) where θ _L ^a is the mixing angle of the ordinary charged lepton with its exotic partner. For Λ = 1 TeV, no bound is obtained on sin² (2θ _L ^a ) form _E < 0.69 TeV. However, sin² (2θ _L ^a ) ≤ 1.52×10⁻⁵ form _E = 5 TeV, sin² (2θ _L ^a ) ≤ 2.41 ×10⁻⁷ form _E = 10 TeV. Similarity for Λ = ∞ no bound is obtained on sin² (2θ _L ^a ) for m_E < 1.97 TeV and sin² (2θ _L ^a ) ≤ 0.15 form _E = 5 TeV and sin² (2θ _L ^a ) ≤ 3.88×10^-2 form _E = 10 TeV.     

Fluctuation study of pionisation in ultrarelativistic nucleus-nucleus interaction

The scaled factorial moments and the multifractal moments have been investigated in differentη-intervals to study the dynamical fluctuation of pions produced in 200 AGeV³²S-Ag/Br interaction. In order to investigate the detail characteristics of intermittency behaviour, theF-moments are extracted up to the eighth order of moments in differentM-intervals. The analysis indicates a non-thermal phase transition and different regime of particle production during the hadronisation process.     

Preparation of (CdO)1−x(PbO)x and (CdS)1−x(PbS)x thin films by spray pyrolysis technique and their characterization

Mixed thin films of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x (x=0.25) were prepared on glass substrates by spray pyrolysis technique for various substrate temperatures 300, 320 and 340 °C. Structural and optical properties were studied. XRD studies reveal the formation of mixed films. The substrate temperature of 340 °C seems to be critical for the formation of CdO-PbO mixed films. It is observed that (CdS)_1−x(PbS)_x mixed films were formed at all the three substrate temperatures. The direct band gap value of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x mixed films is about 2.6 and 2.37 eV, respectively.     

Gamma ray photon-induced modifications in Triafol-TN and Triafol-BN polymeric track detectors

Photon induced modifications in Triafol-TN and Triafol-BN polymers have been studied in the dose range of 10¹–10⁶ Gy at room temperature using a ⁶⁰Co source. To monitor the chemical and structural changes induced by gamma rays, UV, IR, and ESR studies were carried out. Thermal studies were also conducted for understanding the effects of gamma irradiations on these polymers. Variation of track etching characteristics and activation energy for bulk etching have been studied at different gamma rays doses. The experimental results are presented and discussed.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.