Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

Multilayer silicon structures with built-in layers of Ge nanoclusters were studied experimentally by Raman light scattering. The built-in layers were formed by the pulsed action of a low-energy beam of intrinsic ions during molecular-beam epitaxy. It is found that the ion-stimulated nucleation and the subsequent growth make it possible to obtain Ge nanoclusters almost free of Si.     

Optimized Pump Power Ratio on 2nd Order Pumping Discrete Raman Amplifier

By optimizing pump power ratio between 1st order backward pump and 2nd order forward pump on discrete Raman amplifier, we demonstrated over 2dB noise figure improvement without excessive non-linearity degradation.     

A cusp singularity with no Galois cover by a complete intersection

With an explicit example, we confirm a conjecture by Neumann and Wahl that there exist cusps with no Galois cover by a complete intersection. Some computational techniques are reviewed, and a method for deciding whether a given cusp has a complete intersection Galois cover is developed.

     

Block transitive Steiner systems with more than one point orbit

For all ‘reasonable’ finite t, k, and s, we construct a t‐(?₀, k, 1) design and a group of automorphisms which is transitive on blocks and has s orbits on points. In particular, there is a 2‐(?0, 4, 1) design with a block‐transitive group of automorphisms having two point orbits. This answers a question of P. J. Cameron and C. E. Praeger. The construction is presented in a purely combinatorial way, but is a by‐product of a new way of looking at a model‐theoretic construction of E. Hrushovski. © 2004 Wiley Periodicals, Inc.     

Letter: Causality Violating Geodesics in Bonnor's Rotating Dust Metric

We exhibit timelike geodesic paths for a metric, introduced by Bonnor [11] and considered also by Steadman [13], and show that coordinate time runs backward along a portion of these geodesics.     

Dependence of Doubly Charged Ion Formation by the Two-Electron Mechanism on the intensity of Laser Radiation

Experimental dependences of the doubly charged ion yield N ²⁺ on the laser radiation intensity F are analyzed for the case of ion formation by the two-electron mechanism. It is shown that the region where the dependence N ²⁺(F) is characterized by the degree of nonlinearity K≈2.5 corresponds to the saturation of the process of doubly charged ion formation. This region is described well by theoretical calculations performed for Gaussian laser beams.     

Effective Values of Variable Components of the Refractive Index upon Nonlinear Recording of Phase Holograms

The diffraction of a plane wave incident on a thick hologram at the first and second Bragg angles in the process of nonlinear recording is analyzed using the coupled-wave equations. It is shown that, in this case, the two-wave approximation with the use of effective modulation amplitudes of the refractive index, n _1ef and n _2ef, can be applied. Analytical dependences of n _1ef and n _2ef on the modulation amplitudes of the refractive index n ₁ and n ₂ at the fundamental and doubled spatial frequencies are obtained and the criteria of their applicability are determined. The dependences found are used to calculate the parameters of gratings recorded in a photopolymeric material.     

Excitation of low-lying nuclear states by the ion line emission in femtosecond laser plasma

A scheme of nuclear excitation by the ionic X-ray lines in laser plasma using two femtosecond laser pulses is proposed. The first pulse produces plasma with a given degree of ionization, allowing the X-ray line energies of the target ions to be tuned to resonance with the nuclear transition, while the second pulse generates hot electrons that are necessary for X-ray generation.     

π1-classification of real arrangements with up to eight lines

One of the open questions in the geometry of line arrangements is to what extent does the incidence lattice of an arrangement determine its fundamental group. Line arrangements of up to 6 lines were recently classified by K.M. Fan (Michigan Math. J. 44(2) (1997) 283), and it turns out that the incidence lattice of such arrangements determines the projective fundamental group. We use actions on the set of wiring diagrams, introduced in (Garber et al. (J. Knot Theory Ramf.), to classify real arrangements of up to 8 lines. In particular, we show that the incidence lattice of such arrangements determines both the affine and the projective fundamental groups.     

Identifying several biased coins encountered by a hidden random walk

Suppose that attached to each site z ∈ ? is a coin with bias θ(z), and only finitely many of these coins have nonzero bias. Allow a simple random walker to generate observations by tossing, at each move, the coin attached to its current position. Then we can determine the biases {θ(z)}_z∈?, using only the outcomes of these coin tosses and no information about the path of the random walker, up to a shift and reflection of ?. This generalizes a result of Harris and Keane. © 2004 Wiley Periodicals, Inc. Random Struct. Alg., 2004