Large deviations for heavy-tailed random sums of independent random variables with dominatedly varying tails

We prove large deviation results on the partial and random sums Sn = ∑i=1n Xi,n≥1; S(t) = ∑i=1N(t) Xi, t≥0, where {N(t);t≥0} are non-negative integer-valued random variables and {Xn;n≥1} are independent non-negative random variables with distribution, Fn, of Xn, independent of {N(t); t≥0}. Special attention is paid to the distribution of dominated variation.     

面积比较与上调和函数及其应用

本文研究了无穷远处具非负截曲率的完备非紧流形的几何和解析性质,并将 它应用于调和映照.     

求解非对称线性方程组的QMRGCGS方法

1 引言 求解非对称线性方程组Ax=b的双共轭梯度方法(BCG)[3]和它的变形共轭梯度平方方法(CGS)[6]都有典型的不规则收敛行为,后来Freund和Nachtigal提出一种BCG类方法,即拟极小剩余方法(QMR)[7],用来补救BCG方法的收敛性并且产生了光滑的收敛曲线。然而,象BCG方法一样,QMR方法要用到系数矩阵A及其转置A~T与向量的乘积,为了解决这一问题,Freund提出TFQMR方法,此方法具有拟极小剩余性,同时不需用到A~T与向量的乘积。     

双间隙输出腔开放腔的高频特性分析

 建立了S波段相对论速调管放大器双间隙输出腔开放腔的3维模型。采用时域有限差分法,通过监测激励电流源的响应计算了该双间隙输出腔的谐振频率、有载Q值、场分布以及特性阻抗,并分析了腔体结构尺寸对谐振频率、有载Q值和特性阻抗的影响。研究表明：腔体半径对开放腔的谐振频率影响很大,耦合孔尺寸对腔体谐振频率的影响较小;随着耦合孔张角增加,有载Q值逐渐减小;随着腔体半径增大、间隙的减小,腔体特性阻抗降低。研究结果可为S波段强流相对论速调管放大器双间隙输出腔的设计提供理论依据。     

Atom-photon entanglement in the system with competing k-photon and l-photon transitions

We have investigated the evolution of the atomic quantum entropy and the entanglement of atom-photon in the system with competing k-photon and l-photon transitions by means of fully quantum theory, and examined the effects of competing photon numbers （k and l）, the relative coupling strength between the atom and the two-mode field （A/g）, and the initial photon number of the field on the atomic quantum entropy and the entanglement of atom-photon. The results show that the multiphoton competing transitions or the large relative coupling strength can lead to the strong entanglement between atoms and photons. The maximal atom-photon entanglement can be prepared via the appropriate selection of system parameters and interaction time.     

Structural and upconversion fluorescence properties of Er/Yb-codoped oxychloride lead-germanium-bismuth glass

Structural and infrared-to-visible upconversion fluorescence properties of Er³⁺/Yb³⁺-codoped oxychloride lead-germanium-bismuth glass have been studied. The Raman spectrum investigation indicates that PbCl₂ plays an important role in the formation of glass network, and has an important influence on the upconversion luminescence owing to lower phonon energy. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions ²H_11/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2, and ⁴F_9/2→⁴I_15/2, respectively, were observed at room temperature. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation.     

建筑物爆炸泄压的试验研究

本文报导了在1米~3和30米~3两个爆炸泄压试验装置内进行的360余次试验结果。证明了在有平行壁面的建筑物内发生的可燃气爆炸泄压过程中,声动不稳定燃烧压力峰P3是建筑物的主要破坏因素。试验表明,本文发展的一种爆炸减压板具有消除P3的效应。     

气炮用锰铜应力计

本文介绍一种气炮用锰铜应力计测量系统,并给出了两种锰铜计的标定实验数据和曲线。     

Ripening of single-layer InGaAs islands on GaAs（001）

The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.