Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

Un modèle mathématique de cyclone

The source waves are some particular solutions to genuinely non linear hyperbolic systems with a source term, whose propagation velocity is a constant determined by the roots of this source term. We propose a system of 2 equations on a 2 dimension space, which model the velocity field of the atmosphere near the ground. The source term is made of three parts: a given pressure gradient, a friction or aspiration effect and the Coriolis force. In the case where these parameters are constant, we build a solution which is a constant outside a circular crown. The internal circle represents the eye's wall of the hurricane and corresponds to a share shock wave. The external circle is a set generating the bifurcation which actually models the hurricane. To cite this article: A.-Y. LeRoux et al., C. R. Acad. Sci. Paris, Ser. I 339 (2004).     

Geometric modeling of homoepitaxial CVD diamond growth: I. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system

Plasma-assisted CVD homoepitaxial diamond growth is a process that must satisfy many stringent requirements to meet industrial applications, particularly in high-power electronics. Purity control and crystalline quality of the obtained samples are of paramount importance and their optimization is a subject of active research. In the process of such studies, we have obtained high purity CVD diamond monocrystals with unusual morphologies, namely with apparent {1 1 3} stable faces. This phenomenon has led us to examine the process of CVD diamond growth and build up a 3D geometrical model, presented here, describing the film growth as a function of time. The model has been able to successfully describe the morphology of our obtained crystals and can be used as a predictive tool to predetermine the shape and size of a diamond crystal grown in a given process configuration. This renders accessible control of desirable properties such as largest usable diamond surface area and/or film thickness, before the cutting and polishing manufacture steps take place. The two latter steps are more sensitive to the geometry of the growth sectors, which will be addressed in a companion paper.Our model, applicable to the growth of any cubic lattice material, establishes a complete mapping of the final morphology state of growing diamond, as a function of the growth rates of the crystalline planes considered, namely {1 0 0}, {1 1 1}, {1 1 0}, and {1 1 3} planes, all of which have been observed experimentally in diamond films. The model makes no claim as to the stability of the obtained faces, such as the occurrence of non-epitaxial crystallites or twinning. It is also possible to deduce transient behavior of the crystal morphology as growth time is increased. The model conclusions are presented in the form of a series of diagrams, which trace the existence (and dominance) boundaries of each face type, in presence of the others, and where each boundary crossing represent a topology change in terms of number of faces, edges and vertices. We validate the model by matching it against crystals published in the literature and illustrate its predictive value by suggesting ways to increase usable surface area of the diamond film.     

Stable boundary layers in a diffusion problem with nonlinear reaction at the boundary

We prove the existence of nonconstant stable stationary solutions of an evolution problem with a nonlinear reaction acting on the boundary. These solutions present layers at certain points of the boundary. We also study the behavior of these solutions as the small parameter appearing in the equation approaches zero and show some stability properties of the profiles given by these equilibrium solutions.     

Hydroformylation: a versatile tool for the synthesis of new β-formyl-metalloporphyrins

Formyl derivatives of protoporphyrin-IX dimethyl ester metal complexes were obtained via hydroformylation reactions, catalysed by rhodium-triphenylphosphine complexes. The regioselectivity of the reaction is remarkably dependent on the metal centre of the porphyrin, yielding 100% of the branched aldehyde with zinc(II) complexes and 75% with the nickel(II). The NMR characterisation of the new compounds was carried out after their derivatisation into acetals.     

Principes de grandes déviations pour des processus de « coarse graining »

We improve the Large Deviations Principle satisfied by a Coarse Grained process already analyzed by Boucher, Ellis and Turkington [Ann. Probab. 27 (1999) 297–324]. To cite this article: J. Trashorras, C. R. Acad. Sci. Paris, Ser. I 336 (2003).     

Optimization for pattern classification using biased random search techniques

We demonstrate how optimization problems arise in the field of pattern classification, in particular in using piecewise-linear classification and classification based on an optimal linear separator. We motivate the need in this area for a general purpose optimization approach. We discuss ALOPEX, a biased random search approach, from the point of view of this need. While ALOPEX itself failed to fulfil our need, a newly-introduced generalization of it (iterated ALOPEX) was found to be appropriate for the optimization problems of our particular concern. We conclude the paper with a brief critical evaluation of this approach as compared to our original aims.     

Un théorème de type Beurling–Lax dans la boule unitéA Beurling–Lax type theorem in the unit ball

We prove a Beurling–Lax theorem for a family of reproducing kernel Hilbert spaces of functions analytic in an open subset of the unit ball containing the origin. The spaces under consideration are characterized by functions called Schur multipliers. Using the theory of linear relations in Pontryagin spaces we also give coisometric realizations of Schur multipliers. To cite this article: D. Alpay et al., C. R. Acad. Sci. Paris, Ser. I 334 (2002) 349–354.     

Gravitational collapse of a charged and radiating fluid ball in the diffusion limit

The collapse of a charged and radiating ball in the diffusion limit is studied using a method reported by Herrera and collaborators. The interior solution is matched with the exterior Reissner-Nordström-Vaidya metric to obtain a system of differential equations at the surface of the distribution, which can be integrated numerically for some set of initial data. For one model, the profiles of the physical variables are obtained at any piece of the material in terms of Schwarzschild-like coordinates.