First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.     

系综分布和它的小涨落近似

由“从正则分布出发，在小涨落近似下得出的能量涨落分布公式”求得的能量涨落的二次矩与直接由正则分布求得的二次矩完全相同，但分别由二求得的高次矩并不完全相同。     

闭排队网络中性能势与无穷小实现因子之间的关系

In this paper,the concept of the infinitesimal realization factor is extended to the parameter-dependent performance functions in closed queueing networks. Then the concepts of realization matrix (its elements are called realization factors) and performance potential are introduced,and the relations between infinitesimal realization factors and these two quantities are discussed. This provides a united framework for both IPA and non IPA approaches. Finally,another physical meaning of the service rate is given.     

Preparation of enantiomerically pure (R)-2-butyryloxymethylglycidol by lipase-catalyzed asymmetric hydrolysis

Optically active epoxy alcohol, (R)-2-butyryloxymethylglycidol3 which is the precursor of a tert-alcohol chiral building block was obtained in high enantiomeric purity, 98.7% e.e., by lipase-catalyzed asymmetric hydrolysis using a phosphate buffer and organic co-solvent system in 95% of chemical yield.     

掺铬钛酸锶晶体的氧化还原诱导吸收及发光的退火效应和浓度效应

制备了纯的、掺0.005、0.01、0.2和0.5wt%Cr2O3的钛酸锶单晶.测量了不同退火条件下的室温透射光谱及6.5K以上的荧光光谱.对晶体的氧化和还原热处理诱导吸收及退火和掺杂浓度对晶体发光的影响进行了较为详细的研究.     

两步相移实现投影栅相位测量轮廓术

提出一种新的投影栅相位测量方法--两步相移法。该方法只需两幅相移条纹图，因此计算量小，速度快。给出了实验及计算结果，并同四步相移法进行了比较，证明了该方法具有较高的精度。     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

四阶方程两点边值问题Hermite有限元解的渐近展式与外推

1引言有限元解的渐近展式是提高微分方程数值解精度的重要工具,比如亏量校正和外推就是建立在有限元解的渐近展式的基础之上．许多作者对此进行了大量的研究(见[1]-[4]),特别是文[1],提出了在研究有限元解的渐近展式中十分有用的能量嵌入技巧．本文利用能量嵌入定理得到了四阶方程两点边值问题Hermite有限元解及其二阶平均导数的渐近展式,进一步我们还讨论了它们的Richardson外推公式．考虑四阶方程两点边值问题     

Horizontal Connection and Horizontal Mean Curvature in Carnot Groups

In this paper we give a geometric interpretation of the notion of the horizontal mean curvature which is introduced by Danielli Garofalo-Nhieu and Pauls who recently introduced sub- Riemannian minimal surfaces in Carnot groups. This will be done by introducing a natural nonholonomic connection which is the restriction （projection） of the natural Riemannian connection on the horizontal bundle. For this nonholonomic connection and （intrinsic） regular hypersurfaces we introduce the notions of the horizontal second fundamental form and the horizontal shape operator. It turns out that the horizontal mean curvature is the trace of the horizontal shape operator.