Importance of exactb-tensor calculation for quantitative diffusion tensor imaging and tracking of neuronal fiber bundles

Quantitative diffusion tensor imaging (DTI) is a novel method of magnetic resonance (MR) imaging providing information on the brain’s microstructure in vivo. DTI can be effectively measured with modern clinical MR scanners. However, imaging sequence details required for accurateb matrix calculation and for following DTI quantification are normally unknown to the user. In this work, we investigated the accuracy ofb value approximation if theb matrix is calculated without taking into account the effect of imaging gradients. It was found that an error of more than 4% in DTI estimation arises for a quite typical brain imaging protocol. The errors in mean diffusivity and fractional anisotropy index depend on diffusion tensor shape and eigenvectors orientation and exceed noise level in DTI quantification. These errors however have a strong impact on fiber tracking — up to 30% difference was found between the fiber tracks corresponding to exact and approximate calculated DTI data. Since these errors are dependent on imaging parameters and sequence implementation, accurateb matrix calculations are important for adequate comparison between data acquired on different MR scanners and also for data measured with the different imaging protocols.     

The SN3–SN2 spectrum. Rate constants and product selectivities for solvolyses of benzenesulfonyl chlorides in aqueous alcohols

Rate constants for a wide range of binary aqueous mixtures and product selectivities (S) in ethanol–water (EW) and methanol–water (MW) mixtures, are reported at 25 °C for solvolyses of benzenesulfonyl chloride and the 4‐chloro‐derivative. S is defined as follows using molar concentrations: S = ([ester product]/[acid product]) × ([water solvent]/[alcohol solvent]). Additional selectivity data are reported for solvolyses of 4‐Z‐substituted sulfonyl chlorides (Z = OMe, Me, H, Cl and NO₂) in 2,2,2‐trifluoroethanol–water. To explain these results and previously published data on kinetic solvent isotope effects (KSIEs) and on other solvolyses of 4‐nitro and 4‐methoxybenzenesulfonyl chloride, a mechanistic spectrum involving a change from third order to second order is proposed. The molecularity of these reactions is discussed, along with new term ‘S_N3–S_N2 spectrum’ and its connection with the better established term ‘S_N2–S_N1 spectrum’. Copyright © 2009 John Wiley & Sons, Ltd.     

Luminescence enhancement of Eu-doped calcium magnesium silicate blue phosphor for UV-LED application

(Ca_1−x,Eu_x)MgSi_2yO_6+δ blue phosphor was prepared by spray pyrolysis and the photoluminescence properties were optimized by controlling concentration of Si element and the activator content. At y=1.0, the concentration quenching in the luminescent intensity appeared when the Eu²⁺ content (x) was 0.01 (1 at%). Such quenching concentration was changed with the concentration of silicon (y), which was increased with an increase in the quantity of excess Si (y>1.0). The highest luminescent intensity was achieved when the Eu²⁺ content (x) and the Si concentration (y) were 0.04 and 1.3, respectively. According to X-ray diffraction (XRD) analysis, the tetragonal SiO₂ phase was formed as a minor phase when the y value was larger than 1.3. The formation of SiO₂ phase, however, did not reduce but increased the luminescent intensity when the Eu²⁺ content was optimized again. As a result, the luminescent intensity of the phosphor particles optimized in the content of both Si and Eu²⁺ was about 150% improved compared with that of the CaMgSi₂O₆:Eu sample (x=0.01, y=1.0).     

Luminescent characteristics of CaTiO3:Pr thin films prepared by pulsed laser deposition method with various substrates

CaTiO₃:Pr³⁺ films were deposited on different substrates such as Al₂O₃ (0 0 0 1), Si (1 0 0), MgO (1 0 0), and fused silica using pulsed laser deposition method. The crystallinity and surface morphology of these films were investigated by XRD and SEM measurements. The films grown on the different substrates have different crystallinity and morphology. The FWHM of (2 0 0) peak are 0.18, 0.25, 0.28, and 0.30 for Al₂O₃ (0 0 0 1), Si (1 0 0), MgO (1 0 0), and fused silica, respectively. The grain sizes of phosphors grown on different substrates were estimated by using Scherrer's formula and the maximum crystallite size observed for the thin film grown on Al₂O₃ (0 0 0 1). The room temperature PL spectra exhibit only the red emission peak at 613 nm radiated from the transition of (¹D₂ → ³H₄) and the maximum PL intensity for the films grown on the Al₂O₃ (0 0 0 1) is 1.1, 1.4, and 3.7 times higher than that of the CaTiO₃:Pr³⁺ films grown on MgO (1 0 0), Si (1 0 0), and fused Sillica substrates, respectively. The crystallinity, surface morphology and luminescence spectra of thin-film phosphors were highly dependent on substrates.     

Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications

We propose a selector‐less Pr_0.7Ca_0.3MnO₃ (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φ_eff), i.e., self‐formed Schottky barrier. In addition, a scalable 4F² selector‐less cross‐point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high‐density memory applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Signatures of the Unruh effect via high-power, short-pulse lasers

The ultra-high fields of high-power short-pulse lasers are expected to contribute to understanding fundamental properties of the quantum vacuum and quantum theory in very strong fields. For example, the neutral QED vacuum breaks down at the Schwinger field strength of 1.3×10¹⁸ V/m, where a virtual e⁺e^- pair gains its rest mass energy over a Compton wavelength and materializes as a real pair. At such an ultra-high field strength, an electron experiences an acceleration of a_S=2×10²⁸g and hence fundamental phenomena such as the long predicted Unruh effect start to play a role. The Unruh effect implies that the accelerated electron experiences the vacuum as a thermal bath with the Unruh temperature. In its accelerated frame the electron scatters photons off the thermal bath, corresponding to the emission of an entangled pair of photons in the laboratory frame. While it remains an experimental challenge to reach the critical Schwinger field strength within the immediate future even in view of the enormous thrust in high-power laser developments in recent years, the near-future laser technology may allow to probe the signatures of the Unruh effect mentioned above. Using a laser-accelerated electron beam (γ～300) and a counter-propagating laser beam acting as optical undulator should allow to create entangled Unruh photon pairs (i.e., signatures of the Unruh effect) with energies of the order of several hundred keV. An even substantially improved experimental scenario can be realized by using a brilliant 20 keV photon beam as X-ray undulator together with a low-energy (γ≈2) electron beam. In this case the separation of the Unruh photon pairs from background originating from linearly accelerated electrons (classical Larmor radiation) is significantly improved. Detection of the Unruh photons may be envisaged by Compton polarimetry in a 2D-segmented position-sensitive germanium detector.     

Formation, electronic structure, and stability of film nanophases of transition metals on silicon

This paper is devoted to the study of the morphology, growth, electronic structure, and stability of ultrathin (0.03–3 nm) Co and Fe films on the Si(111) and Si(100) surfaces using Auger-electron spectroscopy, electron-energy loss spectrometry, low-energy electron diffraction, and atomic-force microscopy. It is shown that layer-by-layer growth of the metal with the formation of the film nanophase and the segregation of a submonolayer amount of Si on the film’s nanophase surface occurs during the process of layer-by layer growth of Co and Fe on Si(111)-7 × 7 and Si(100)-2 × 1 at room temperature after the growth of two-dimensional metal phases (the surface phase, the monolayer, and two metal monolayers). After these stages, the formation and growth of the bulk’s metal phase with the dissolution of silicon segregated before occur. It is shown that the upper layers of Si adjoining the surface phase, the monolayer, and two Co and Fe monolayers have respectively three different densities of the electron plasma that are higher than the density of the electron plasma in the volume of the silicon substrate. The nonmonotonous character of the morphological and chemical stability of Fe films with quantum-size thicknesses on Si(100) is discovered. After annealing, the film is first smooth, then it is nonuniform across its thickness; afterwards it is again smooth and then nonuniform across its thickness. In this case, the metal phase, different Fe silicides, and the bulk’s metal phase form successively in Fe films on Si(100) after annealing.     

Air stability of PTCDI‐C13‐based n‐OFETs on polymer interfacial layers

This Letter reports the novel use of poly(9‐vinylcarbazole) (PVK) as a dielectric interfacial layer for n‐type organic field‐effect transistors (n‐OFETs). With PVK, both the air stability and electron mobility of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OFETs were improved. Among the PVKs with different weight‐average molecular weight (M_w), PVK with high M_w showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm²/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI‐C13‐based n‐OFET for air‐exposure and caused a decrease in the threshold voltage shift.

     

Spin-orbital pattern dependent polaron absorption in manganites

We systematically investigated optical properties of Nd1-xSrxMnO3 single crystals ( x = 0.40, 0.50, 0.55, and 0.65). They are similar in their spin-orbital (SO) disordered states at room temperature. At low temperature, the crystals enter into various SO ordered states, i.e., F-, CE-, A-, and C-type orderings, and their mid-infrared absorptions become quite different. The remarkable variation can be explained by polaron dynamics which depend on the ordering patterns. This SO pattern dependent polaron model can also explain the pseudo CE-type ordering case, demonstrating that this scheme can explain the carrier dynamics in complex SO configurations.     

Propagation of time-reversed Lamb waves in acrylic cylindrical tubes as cortical-bone-mimicking phantoms

The present study aims to investigate the propagation of time-reversed Lamb waves in acrylic cylindrical tubes as cortical-bone-mimicking phantoms. Time-reversed Lamb waves could be successfully launched in 6 acrylic tubes with wall thicknesses from 2 to 12 mm by using a modified time reversal method. The group velocities of the time-reversed Lamb waves in the acrylic tubes were measured by using the axial transmission technique. They decreased very slightly with increasing wall thickness, showing good agreement with the theoretical group velocity of the A0 Lamb wave in the acrylic plate. These results suggest that the time-reversed Lamb waves in the acrylic tubes would essentially behave as the A0 Lamb wave, consistent with the behavior of the slow guided wave in long cortical bones. It is expected that the application of the time-reversed Lamb waves in long bones would enhance clinical potential of ultrasonic technologies for the diagnosis of osteoporosis.