液体薄层中的超声空化*

液体薄层中的超声空化,因其边界及所处空间的特殊性,而呈现出非常独特的空化结构和演化行为,在超声清洗、超声钎焊、表面处理、近场声悬浮、超声化学等领域都有所应用。该文梳理了近几年该课题组在液体薄层中的超声空化研究中的一些成果,力图揭示液体薄层内空泡、空化云、空化场的运动和分布规律,及其产生、发展和演化过程,以期对液体薄层中的超声空化行为有一个相对清晰和完整的认识。     

铟镓锌氧薄膜晶体管的悬浮栅效应研究

为了避免光照对铟镓锌氧薄膜晶体管(InGaZnO thin film transistors,IGZO TFTs)电学特性的影响,IGZO TFT要增加遮光金属层.本文研究了遮光金属栅极悬浮时,IGZO TFT的输出特性.采用器件数值计算工具TCAD(technology computer-aided design)分析了IGZO层与栅介质层界面处电势分布,证实了悬浮栅(floating gate,FG)IGZO TFT输出曲线的不饱和现象是由悬浮栅与TFT漏端的电容耦合造成.基于等效电容的电压分配方法,提出了悬浮栅IGZO TFT电流的一阶模型.TCAD数值分析及一阶物理模型结果与测试具有较高程度的符合,较完整地解释了悬浮栅IGZO TFT的电学特性.     

利用Ag@SiO_2纳米粒子等离子体共振增强发光二极管辐射功率的数值研究

金属纳米粒子利用其局域表面等离子体共振效应(LSPR),可以增强附近荧光分子的自发辐射速率,因而在光学传感、光电器件等领域中具有潜在的应用价值.金属纳米粒子的LSPR与其自身的材料、形状、尺寸以及周围环境介质密切相关,这影响着纳米粒子在具体器件中的应用.本文利用三维时域有限差分法,研究了相同体积的球形、椭球形、立方形与三棱柱形银纳米粒子对薄膜发光二极管辐射功率的影响;计算了不同形状银纳米粒子对偶极子光源辐射功率和薄膜器件光出射强度的增强,并结合LSPR效应讨论了辐射功率变化的物理机理.研究结果表明:银纳米粒子自身形状尖锐程度的增加有利于提高LSPR的共振强度;同时纳米粒子的形状影响了LSPR共振电场与薄膜器件中偶极子辐射电场之间的耦合作用,其中立方形纳米粒子因为能实现最强的耦合作用而对器件的辐射功率增强最大.在此基础上进一步讨论了不同薄膜材料对LSPR共振及光源辐射功率的影响,发现较高的材料折射率有利于增强金属纳米粒子的LSPR与器件的耦合作用,从而改善发光二极管性能.     

Model-independent determination on <Emphasis Type="Italic">H</Emphasis><Subscript>0</Subscript> using the latest cosmic chronometer data

We perform the updated constraints on the Hubble constant H ₀ by using the model-independent method, Gaussian processes. Utilizing the latest 30 cosmic chronometer measurements, we obtain H ₀ = 67.38 ± 4.72 km s^?1 Mpc^?1, which is consistent with the Planck 2015 and Riess et al. analysis at 1σ confidence level. Different from the results of Busti et al. by only using 19 H(z) measurements, our reconstruction results of H(z) and the derived values of H ₀ are insensitive to the concrete choice of covariance functions of Matérn family.     

Thermal activation and reaction of allyl alcohol on Ni(100)

The thermal chemistry of allyl alcohol (CH₂CHCH₂OH) on a Ni(100) single-crystal surface was studied by the temperature programmed desorption (TPD) and the X-ray photoelectron spectroscopy (XPS). The allyl alcohol adsorbs molecularly on the metal surface at 100 K. Intact molecular desorption from the surface occurs at temperatures around 180 K, but some molecules exhibit chemical reactivity on the surface: activation of the OH, CC, and CO bonds produces η¹(O)-allyloxy CH₂CHCH₂O_(a), η²(C, C) allyl alcohol (C_(a)H₂C_(a)HCH₂OH), and η³(C, C, O)-alkoxide (C_(a)H₂C_(a)CH₂ O_(a)) intermediates. Further thermal activation of allyl alcohol on the surface yields propylene (CH₂CHCH₃), 1-propanol (CH₃CH₂CH₂OH), propanal (CH₃CH₂CHO), and combustion and dehydrogenation products (H₂O, H₂, and CO). Propylene desorbs from the surface at temperatures of around 270 K. Hydrogenation to the η³(C, C, O)-alkoxide intermediate leads to the production of propanal which desorbs from the surface around 320 K, while hydrogenation of the η²(C, C) allyl alcohol intermediate produces 1-propanol, which desorbs at around 310 K. The co-adsorption of hydrogen atoms on the surface enhances the formation of the saturated alcohol, while co-adsorption of oxygen enhances the formation of both the saturated alcohol and the saturated aldehydes.     

Quantum anomalous Hall effect and giant Rashba spin-orbit splitting in graphene system co-doped with boron and 5d transition-metal atoms

Quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon in condensed matter physics. Until now, the QAHE has only been experimentally realized for Cr/V-doped (Bi, Sb)₂Te₃ but at an extremely low observational temperature, thereby limiting its potential application in dissipationless quantum electronics. By employing first-principles calculations, we study the electronic structures of graphene co-doped with 5d transition metal and boron atoms based on a compensated n–p co-doping scheme. Our findings are as follows: i) The electrostatic attraction between the n- and p-type dopants effectively enhances the adsorption of metal adatoms and suppresses their undesirable clustering. ii) Hf-B and Os-B co-doped graphene systems can establish long-range ferromagnetic order and open larger nontrivial band gaps because of the stronger spin-orbit coupling with the non-vanishing Berry curvatures to host the high-temperature QAHE. iii) The calculated Rashba splitting energies in Re–B and Pt–B co-doped graphene systems can reach up to 158 and 85 meV, respectively, which are several orders of magnitude higher than the reported intrinsic spin-orbit coupling strength.     

Universal critical properties of the Eulerian bond-cubic model

We investigate the Eulerian bond-cubic model on the square lattice by means of Monte Carlo simulations,using an efficient cluster algorithm and a finite-size scaling analysis.The critical points and four critical exponents of the model are determined for several values of n.Two of the exponents are fractal dimensions,which are obtained numerically for the first time.Our results are consistent with the Coulomb gas predictions for the critical O(n) branch for n < 2 and the results obtained by previous transfer matrix calculations.For n=2,we find that the thermal exponent,the magnetic exponent and the fractal dimension of the largest critical Eulerian bond component are different from those of the critical O(2) loop model.These results confirm that the cubic anisotropy is marginal at n=2 but irrelevant for n < 2.     

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

First-principles study for the atomic structures and electronic properties of PbTiO3 oxygen-vacancies (0 0 1) surface

The structural and electronic properties of fully-relaxed PbTiO₃ (0 0 1) oxygen-vacancy surface with PbO and TiO₂ terminations are investigated by first-principles calculations. In contrast to the perfect surface, the smaller surface rumples and interlayer distances have been found. The largest relaxation occurs on the second layer atoms not on the surface layer ones, and some in-gap Ti 3d states at about −1.1 eV below the Fermi-level are observed in the TiO₂-terminated surface caused by oxygen-vacancies. For the PbO-terminated surface, some in-gap Ti 3d states and Pb 6p states also move into the bulk midgap region to become partially occupied, and two different chemical states of the Pb 6s states were found. One is attributed to the bulk perovskite Pb atoms and another one is caused by the relaxation of surface Pb atoms. These theoretical results would give a good reference for the future experimental studies.     

Ionization-induced electron trapping in ultrarelativistic plasma wakes

The onset of trapping of electrons born inside a highly relativistic, 3D beam-driven plasma wake is investigated. Trapping occurs in the transition regions of a Li plasma confined by He gas. Li plasma electrons support the wake, and higher ionization potential He atoms are ionized as the beam is focused by Li ions and can be trapped. As the wake amplitude is increased, the onset of trapping is observed. Some electrons gain up to 7.6 GeV in a 30.5 cm plasma. The experimentally inferred trapping threshold is at a wake amplitude of 36 GV/m, in good agreement with an analytical model and PIC simulations.