Magnetisation reversal in media with perpendicular anisotropy

In this paper, we discuss two key aspects of magnetisation reversal in magnetic thin films with perpendicular anisotropy. Firstly, a study has been made of the additional field required to erase data written perpendicular to a thin film recording disk as the linear data density is increased. It has been found that an increase in data density from 40 to 360 kfci results in an increase of 1.25 kOe in the field required to erase the data. Secondly, the effect of varying the level of exchange coupling by co-sputtering CoCrPt samples with SiO₂ has been studied using a characterisation technique that is independent of the self-demagnetising field. It has been found that the samples are fully exchange de-coupled when the film contains >9.8% SiO₂ and the activation volume of reversal remains constant for higher levels of SiO₂.     

Mechanism of phase transitions in the (NH4)2WO2F4 ferroelastic

Precision studies of the thermophysical properties and structure of an (NH₄)₂WO₂F₄ crystal have been performed. It was established reliably that there is a sequence of two phase transitions at T ₁ = 201 K and T ₂ = 160 K characterized by wedging out of an intermediate phase with an increase in pressure. The role of tetrahedral and octahedral ionic groups in the mechanism of the structural transitions was determined.     

Optical and photoelectric properties of pure and cadmium-and lead-doped neodymium sesquisulfide thin films

A technique for preparing γ-Nd₂S₃ crystalline thin films through discrete vacuum thermal evaporation of a presynthesized bulk material is developed. The films deposited are doped with cadmium and lead. The reflectance and transmittance spectra of the films are measured in the photon energy range 0.2–3.0 eV at a temperature of 300 K. The frequency analysis of the absorption coefficient demonstrates that the γ-Nd₂S₃ films are characterized by an exponential absorption edge. The photoconductivity spectra and temperature dependences of the photoconductivity for the γ-Nd₂S₃ films doped with cadmium and lead are measured in the photon energy range 0.2–3.3 eV at temperatures varying from 115 to 380 K. The experimental data obtained are interpreted under the assumption that the acceptor levels formed by vacancies in the cation sublattice and compensated for by cadmium and lead donor dopants play a crucial role in the photoconduction. The ionization energy at the lead donor level is determined.     

Synthesis and investigation of titanium diselenide intercalated with ferrocene and cobaltocene

Single crystals and polycrystals of titanium diselenide TiSe₂ intercalated with ferrocene Fe(η⁵-C₅H₅)₂ and cobaltocene Co(η⁵-C₅H₅)₂ are synthesized. The magnetic susceptibility and electrical resistivity of the intercalation compounds are measured. The results obtained demonstrate that the intercalation brings about the formation of an impurity band with a temperature-dependent width.     

Structural characterisation of Sb-based heterostructures by X-ray scattering methods

Antimonide-based superlattices dedicated to the elaboration of opto-electronic devices have been studied by X-ray scattering techniques. In particular, specular and non-specular X-ray reflectometry experiments have been performed on two MBE-samples elaborated with different shutter sequences at the interfaces. The results have shown a limitation of the incorporation of Sb species in the subsequent InAs layer for one of the samples, as expected.Then, a study on a InGaAs-cap layer/(InGaAs/AlAsSb)_N superlattice grown on a InGaAs/InP buffer layer by both specular X-ray reflectometry and High resolution X-ray diffraction is reported. In particular, the results have revealed the presence of a highly disturbed thin-layer on top of the MOVPE-made GaInAs, whose presence has been explained by In-concentration modification during the desoxidation procedure at the surface of the MOVPE-made GaInAs.Beside the results on the Sb-based heterostructures, the use of X-ray scattering metrology as a routinely working non-destructive testing method has been emphasized.     

Thickness dependence of the magnetic anisotropy of Fe layers separated by Al

Magnetic multilayers of ⁵⁷Fe with nominal thickness, T _nom, between 0.4 and 1.0 nm separated by 3.0 nm Al spacer layers were prepared by alternate deposition of the constituents in high vacuum. The samples were investigated at 4.2 K in external magnetic field. A fraction of Fe atoms corresponding to about 0.3 nm equivalent Fe-thickness was found to mix into the Al spacer. The extremely strong magnetic anisotropy observed for T _nom < 0.8 nm is attributed to Fe layers of approximately two atomic planes thick. The anisotropy decreases considerably after the building up of the third Fe atomic layer starts at T _nom = 0.8 nm, but full saturation was not achieved even for T _nom = 1 nm and 3 T magnetic field applied perpendicularly to the sample plane.     

Magnetic and transport properties of double distorted perovskites CaCuMn6O12 and CaCu2Mn5O12

Magnetic and transport properties of double distorted perovskites CaCuMn₆O₁₂ and CaCu₂Mn₅O₁₂ are studied in a range 2–300 K. The leading role in magnetism of these compounds belongs to antiferromagnetic exchange interaction of Cu²⁺ in square coordination with Mn³⁺/Mn⁴⁺ in octahedral coordination. The values of saturation magnetization indicate that Mn³⁺ ions in square coordination are coupled ferromagnetically with Mn³⁺/Mn⁴⁺ in octahedral coordination. The colossal magnetoresistance in the pellet samples is due assumingly to intergranular spin-polarized tunneling of current carriers.     

In situ preparation of Bi-Sr-Ca-Cu-O superconducting films by laser sputtering

Superconducting films of Bi-Sr-Ca-Cu-O on (100) MgO substrates have been fabricated by XeCl-excimer-laser sputtering from ceramic targets of Bi_2.5Sr₂Ca₂Cu₃O_y in O₂ atmosphere. The films were polycrystalline with the c-axis (30.80±0.02Å) preferably oriented normal to the substrate surface. Without post-annealing the films showed metallic resistance behavior with zero resistance temperatures of up to T_c(0) }- 79 K. The critical current density of the films had values of up to j_c(50K)}- 10⁴ A/cm².