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891.
Amplitude equations, as well as the effective dispersion and nonlinearity parameters, which define the dynamics of a wave packet formed by two strongly coupled modes, are derived with allowance for the frequency dependence of the linear mode coupling coefficient. These equations are used to study the onset of the modulation instability of the two-mode wave packet, soliton-like pulses, and compression modes. Unlike single-mode systems, the last two effects in optical waveguides may arise for both a negative and positive disper-sion of the waveguide material.  相似文献   
892.
In order to understand better the way in which radioactive contamination may be transferred from the atmosphere to other ecological compartments it is necessary to obtain information of the deposition mechanisms of radionuclides. Concentration and speciation of 137Cs and 7Be in the atmospheric aerosol and deposition were studied. The mixed deposition velocities of water-soluble and insoluble 137Cs and 7Be were determined. The relation between activity concentrations of insoluble 7Be in the atmosphere and its amount in deposition was observed. It is supposed that in the deposition process of radiocesium the precipitation plays an important role in scavenging of water-soluble radiocesium by falling raindrops, in contrast to insoluble 137Cs where the dry deposition becomes predominant.  相似文献   
893.
We study two-variable Engel-like relations and identities characterizing finite-dimensional solvable Lie algebras and, conjecturally, finite solvable groups and introduce some invariants of finite groups associated with such relations. Bibliography: 29 titles.  相似文献   
894.
The method of nonlinear moments, when used to solve the Boltzmann equation, necessitates the calculation of collision integral matrix elements. The matrix elements are hard to calculate numerically, especially at large indices. The asymptotics of the matrix elements are constructed. In terms of the model of pseudopower particle interaction, a formula free of summation is derived. This makes it possible to find the asymptotic behavior of linear and nonlinear elements when two indices are large. For an arbitrary interaction cross section, asymptotic expansions of linear and nonlinear matrix elements in one index are obtained. For Maxwellian molecules, asymptotic formulas are derived for three large indices.  相似文献   
895.
Ab initio MP2 calculations with several basis sets proved the existence of a stable benzonitrile dimer with a planar structure and a short contact between the H atom of one molecule and the N atom of another. The structure is greatly stabilized by attraction between the neighboring oppositely directed dipoles and donor-acceptor interaction between the orbital of the lone electron pair of the N′ atom and the vacant antibonding orbital localized on the C-H bond.Original Russian Text Copyright © 2004 by O. V. Sizova, E. P. Sokolova, V. I. Baranovskii, D. A. Rozmanov, and O. A. Tomashenko__________Translated from Zhurnal Strukturnoi Khimii, Vol. 45, No. 5, pp. 807–815, September–October, 2004.  相似文献   
896.
Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×1010 cm−2, which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.  相似文献   
897.
In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.  相似文献   
898.
The room temperature structure of perovskite CeAlO3 has been reinvestigated by X-ray powder diffraction. The Rietveld refinement has confirmed the tetragonal symmetry; but revealed a super cell, a=5.32489(6) Å and c=7.58976(10) Å, with the space group I4/mcm. In CeAlO3, the distortion from the ideal cubic perovskite is caused by the cooperative tilting of the AlO6 octahedra around the primitive cubic [001]p-axis.  相似文献   
899.
Aromatic nitro compounds were reduced to the corresponding symmetrically substituted azo compounds using lead as catalyst and triethylammonium formate as hydrogen donor. Various azo compounds containing additional reducible substituents including halogens, nitrile, acid, phenol, ester, methoxy functions, etc, have been synthesized in a single step by the use of this reagent. The conversion is reasonably fast, clean, high yielding and occurs at room temperature in methanol.  相似文献   
900.
A previously developed laser spallation technique has been modified to measure the tensile strength of thin film interfaces in-situ at temperatures up to 1100°C. Tensile strengths of Nb/A-plane sapphire, FeCrAl/A-plane sapphire and FeCrAlY/A-plane sapphire were measured up to 950°C. The measured strengths at high temperatures were substantially lower compared with their corresponding strengths at ambient temperature. For example, at 850°C, the interface tensile strength for the Nb/sapphire (151 ± 17 MPa), FeCrAl/sapphire (62 ± 8 MPa) and FeCrAlY/sapphire (82 ± 11 MPa) interface systems were lower by factors of approximately, 3, 5, and 8, respectively, over their corresponding ambient values. These results underscore the importance of using such in-situ measured values under operating conditions as the failure criterion in any life prediction or reliability models of such coated systems where local interface temperature excursions are expected. The results on alloy film interfaces also demonstrate that the presence of Y increases the strength of FeCrAl/Al2O3 interfaces.  相似文献   
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