A BRANCH BOUND METHOD FOR SUBSET SUM PROBLEM

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Estimation of the exchange constants in the Fe sublattice of the Y2Fe17 and Y2Fe17N3−δ compounds from the analysis of Mössbauer measurements

From the analysis of Mössbauer data for Y₂Fe₁₇ and Y₂Fe₁₇N_3−δ at various temperatures the hyperfine fields for 4f, 6g, 12j, 12k iron sites were estimated as a function of temperature. The reduced magnetizations calculated from the values of the hyperfine fields are fitted with a mean field model for four interacting sublattices using a computer program. The estimated exchange interaction from the fitting procedure between the 4f sites is found strongly negative (antiferromagnetic) in Y₂Fe₁₇ whereas in Y₂Fe₁₇N_3−δ it increases and becomes weak negative following a modified Slater-Néel curve. The rest of the exchange interactions are found positive or weak negative depending on the distances between the Fe atoms.     

Phonon growth in a many valley model semiconductor at low lattice temperatures

It is shown how the traditional method of neglecting the energy of acoustic phonons and approximating their distribution by the equipartition law leads to significant errors in the phonon growth rate in a many-valley model semiconductor when the lattice temperature is low.     

Trefftz,collocation, and other boundary methods—A comparison

In this article we survey the Trefftz method (TM), the collocation method (CM), and the collocation Trefftz method (CTM). We also review the coupling techniques for the interzonal conditions, which include the indirect Trefftz method, the original Trefftz method, the penalty plus hybrid Trefftz method, and the direct Trefftz method. Other boundary methods are also briefly described. Key issues in these algorithms, including the error analysis, are addressed. New numerical results are reported. Comparisons among TMs and other numerical methods are made. It is concluded that the CTM is the simplest algorithm and provides the most accurate solution with the best numerical stability. © 2006 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq, 2007     

Semidefinite optimization models for limit and shakedown analysis problems involving matrix spreads

Limit and shakedown analysis problems of Computational Mechanics lead to convex optimization problems, characterized by linear objective functions, linear equality constraints and constraints expressing the restrictions imposed by the material strength. It is shown that two important strength criteria, the Mohr–Coulomb and the Tresca criterion, can be represented as systems of semidefinite constraints, leading this way to semidefinite programming problems.     

Study of hot bands in the B2Σ+u-X2Σ+g system of C-2 anion

Optical heterodyne magnetic rotation enhanced velocity modulation spectroscopy was employed to observe the visible absorption spectra of the B^2Σ^+_u-X^2Σ^+_g electronic transition of C^-_2. Four hot bands (0,1), (1,2), (2,3) and (3,4) have been observed and the band (3,4) is measured directly for the first time, so far as we know, by absorption. A rotational analysis was carried out to obtain molecular constants. With the Franck－Condon principle and the vibrational Boltzmann distribution, we have estimated the vibrational temperature of C^-_2 to be about 3000K.     

Laser nanosources based on planar photonic crystals as new platforms for nanophotonic devices

Two-dimensional photonic crystal lasers have been fabricated on III–V semiconductor slabs. Tuning of the spontaneous emission in micro and nanocavities has been achieved by accurate control of the slab thickness. Different structures, some of them of new application to photonic crystal lasers, have been fabricated like the Suzuki-phase or the coupled-cavity ring-like resonators. Laser emission has been obtained by pulsed optical pumping. Optical characterization of the lasing modes have been performed showing one or more laser peaks centred around 1.55 μm. Far field characterization of the emission pattern has been realized showing different patterns depending on the geometrical shape of the structures. These kinds of devices may be used as efficient nanolaser sources for optical communications or optical sensors.     

Synthesis and thermal behaviour of salicylaldimine-based liquid crystalline symmetrical dimers

A series of symmetrical dimers consisting of salicylaldimine moieties connected by flexible alkylene central spacer via ether linkages has been synthesized. In order to validate the empirical rule suggested by Date et al. to account for the smectic behaviour of such dimers, the chain length of the terminal alkoxy chain has been kept constant (C₈) while the number of methylene units in the central spacer was varied from C₃ to C₁₁. Another aim of the present investigation was to understand structure-property relationship in these dimers in which the salicylaldimine mesogenic segment has been used for the first time in dimers. The mesomorphic behaviour of these dimers was evaluated using optical microscopy and differential scanning calorimetry and the structure of some of the mesophases has been further investigated with the help of X-ray diffraction. Our studies reveal that the dimers consisting of 3 to 8 methylene units in the flexible spacer show only smectic (smectic C and smectic A) phases. For the dimers containing 4, 6 and 8 methylene units in the central spacer, a unique filament growth pattern has been observed in the smectic A phase while cooling from the isotropic phase. The dimers containing of C₉ to C₁₁ methylene groups exhibit the nematic phase in addition to smectic modifications. This observation indicates that when the terminal chains are shorter than the spacer, the tendency to form smectic phases is not fully extinguished but is perhaps reduced.     

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Al₂O₃ incorporated HfO₂ films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al₂O₃ incorporation. The incorporation of Al₂O₃ into the HfO₂ film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO₂ film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO₂ film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al₂O₃ on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO₂ contributed to Hf silicide formation on the film surface.