Dispersion of waves in a plane acoustic layer with flexible elastic walls

A plane acoustic layer bounded by elastic membranes is considered. Dispersion relations for symmetric and antisymmetric waves are derived. The limit behavior of dispersion curves is investigated for wave numbers tending to zero and to infinity. With the use of the resulting asymptotic expansions, the two-point Pade approximations are constructed. The orthogonality relations for eigenmodes are presented.     

Electromechanical properties of Pb<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> piezoelectric crystals grown from solution in a melt

Single crystals of lead gallium germanate Pb₃Ga₂Ge₄O₁₄ are grown from their own solution melts. The propagation of bulk acoustic waves is investigated, and the elastic, piezoelectric, and dielectric constants are calculated. The temperature dependences of the dielectric constants of this compound are analyzed.     

Microstructure and mechanical characteristics of nanodiamond-SiC compacts

Superhard nanodiamond-SiC ceramics are prepared by infiltrating liquid Si into porous nanodiamond compacts under pressure. Synthesized samples are 2.2 mm thick and 3–4 mm in diameter. The effect of particle size of dynamically synthesized nanodiamond powders on silicon infiltration and SiC phase formation is studied. It is established that silicon does not penetrate into the pores of nanodiamond powders if the original particle size is smaller than 0.5–1.0 μm. The critical pore size for infiltration is 100–200 nm. A study of the microstructure of the samples showed the presence of the nanometer-and submicron-scale SiC phase. The ultrasound velocities are measured in the prepared compacts, and the elastic moduli are calculated. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 4, 2004, pp. 734–736. Original Russian Text Copyright ? 2004 by Ekimov, Gromnitskaya, Mazalov, Pal’, Pichugin, Gierlotka, Palosz, Kozubowski.     

Oxidation kinetics of thin titanium films grown on tungsten

Growth of thin Ti films on (100)W and the kinetics of their oxidation are studied using thermal-desorption spectroscopy and Auger electron spectroscopy. Titanium films grow nearly layer by layer on the (100)W face at room temperature. The activation energy for desorption of Ti atoms decreases from 5.2 eV for coverage θ=0.1 to 4.9 eV in a multilayer film. Oxidation of a thin (θ=6) titanium film starts with dissolution of oxygen atoms in its bulk to the limiting concentration for a given temperature, after which the film oxidizes to TiO, with the TiO₂ oxide starting to grow when exposure of the film to oxygen is prolonged. The thermal desorption of oxides follows zero-order kinetics and is characterized by desorption activation energies of 5.1 (TiO) and 5.9 eV (TiO₂).     

Magnetization vector field in a uniaxial ferromagnetic film

Technical Physics - Analytical models for the magnetization vector field B m in a uniaxial ferromagnetic film are studied. Some of them are found to closely approximate B m even if the quality...     

The effect of electrical boundary conditions on the characteristics of surface acoustic waves propagating in potassium niobate

The study of the effect of a perfectly conducting plane placed at a certain distance from the surface of a potassium niobate crystal on the characteristics of the generalized Rayleigh and Gulyaev-Bleustein surface waves is continued. In addition, the effect of an infinitely thin conducting layer applied to the surface of the piezoelectric on the characteristics of these waves is analyzed. It is found that a variation in the conductance of this layer can produce a result that completely differs from the result obtained when a perfectly conducting plane is moved toward the surface, although the extreme states of these actions (electrically open and short-circuited surfaces) are identical. A possible physical explanation of this difference is proposed.