Annealing effect on soft magnetic properties and magnetoimpedance of Finemet Fe73.5Si13.5B9Nb3Au1 alloy

Effect of annealing on the soft magnetic properties of Fe_73.5Si_13.5B₉Nb₃Au₁ amorphous ribbon has been investigated by means of structure examination, magnetoimpedance ratio (MIR) and incremental permeability ratio (PR) spectra measured in the frequency range of 1–10 MHz at a fixed current of 10 mA X-ray diffraction analysis showed that the as-cast sample was amorphous and it became nanocrystalline under a proper heat treatment. When annealing amorphous alloy at 530 °C for 30, 60, 90 min, soft magnetic properties have been improved drastically. Among the samples investigated, the sample annealed at 530 °C for 90 min showed the softest magnetic behavior. The MIR and PR curves revealed the desirable changes in anisotropy field depending upon annealing.     

Enantioselective hydrogenation of diaryl-substituted α,β-unsaturated nitriles

α,β-Unsaturated nitriles can be hydrogenated with enantioselectivities up to 88% ee using chiral ruthenium-diphenylphosphino bisaryl and bisheteroaryl complexes such as ruthenium(II)-BINAP and ruthenium(II)-BINP. Mechanistic investigations indicate that conversion is accelerated by electron-rich ligands and that an additional coordinative group needs be present in order to promote conversion. The chiral products are useful building blocks for the synthesis of histamine H₂ agonists of the arpromidine type.     

The statement and numerical solution of an optimization problem in X-ray tomography

A nonclassical problem is considered for the transport equation with coefficients depending on the energy of radiation. The task is to find the discontinuity surfaces for the coefficients of the equation from measurements of the radiation flux leaving the medium. For this tomography problem, an optimization problem is stated and numerically analyzed. The latter consists in determining the radiation energy that ensures the best reconstruction of the unknown medium. A simplified optimization problem is solved analytically.     

Bronze roman mirrors: the secret of brightness

The surface microchemical structure of high tin leaded bronze Roman mirrors has been studied by means of scanning electron microscopy combined with energy dispersive spectrometry (SEM-EDS), X-ray diffraction (XRD) and optical microscopy (OM) techniques. The results allowed understanding of the origin of their high chemical stability and silvery-lustrous appearance. Indeed, some areas of the selected Roman mirrors are still characterised by a highly reflective and silver coloured surface even though they have been buried in the soil for about 2000 years. The micro-chemical results obtained from these areas have revealed that the mirror surface was tin enriched via inverse-segregation phenomenon by tailoring the cooling parameters. Furthermore, the presence of tin could be likely enhanced via cycles of oxidation and selective copper corrosion processes, thus resulting in a tin surface enrichment as a semi-transparent amorphous-like tin oxide (SnO₂) film, as well as a copper depletion at the outer surfaces.     

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature.     

Properties of<Emphasis Type="Italic">B</Emphasis><Subscript>c</Subscript> meson

The mass spectrum ofcb meson is investigated with an effective quark-antiquark potential of the form -α_c/r +Ar ^νwith ν varying from 0.5 to 2.0. TheS andP-wave masses, pseudoscalar decay constant, weak decay partial widths in spectator model and the lifetime ofB _cmeson are computed. The properties calculated here are found to be in good agreement with other theoretical and experimental values at potential index,ν = 1     

The LPCTrap experiment: measurement of the β–ν angular correlation in 6He using a transparent Paul trap

We report on the status of the LPCTrap experiment, devoted to measure the β–ν angular correlation in the pure Gamow–Teller decay of ⁶He. This measurement is motivated by the search for the presence of tensor type contributions to the weak interaction. The ⁶He ions are confined in a novel transparent Paul trap. The β particles and the recoil ions are detected in coincidence to deduce the angular correlation parameter. The commissioning run performed in 2005 has given the proof of principle of this experiment. Up to 10⁵ coincidences were recorded during a second run in 2006.     

The electron ionization rate in multilayered semiconductor structures

We present theoretical results of the electron impact ionization rate in GaAs/AlGaAs multiquantum well structures as a function of applied electric field for various geometries, i.e., well and barrier widths. In addition, we present preliminary measurements of the current-voltage characteristics of MBE grown devices which demonstrate very low leakage current as well as sharp breakdwon behavior. It is found that the net ionization rate, determined by averaging over the constitutent GaAs and AlGaAs layers, approaches the weighted average of the constituent bulk rates at high electric field strengths; the potential discontinuity is relatively unimportant. The electron ionization rate within the well regions alone is still higher than that in bulk GaAs, but is insufficiently enhanced to compensate for the much lower rate in the AlGaAs layers. As the field is lowered to 250.0 kV/cm, the average ionization rate in the multiquantum well structure becomes larger than in the bulk.