n(Zn)：n(Ga)比值对合成ZnGa2O4结构及光致发光性能的影响

以ZnO和HGaO₂为原料,用不同配比合成出系列ZnGa₂O₄,并对其晶体结构和发光性能进行了研究。用荧光分光光度计检测了ZnGa₂O₄的激发和发射光谱,用X射线衍射仪检测了ZnGa₂O₄的衍射图谱,用热重差热仪绘制了TGA-DAT曲线。对检测结果分析认为:1.ZnGa₂O₄属于尖晶石结构,稍过量的Zn或Ga能进入ZnGa₂O₄结构中,并对ZnGa₂O₄的晶格常数产生一定影响。2.ZnGa₂O₄存在两个自激发光中心,当Ga稍过量时,自激发光中心是四面体镓氧键[T_d(Ga-O)],最大激发波长约248nm,最大发射波长约367nm;当Zn稍过量时,自激发光中心是八面体镓氧键[O_h(Ga-O)],最大激发波长约270nm,最大发射波长约441nm。当n(Zn):n(Ga)在理论值附近,激发和发射光强度最大,而且光谱峰位发生了红移。3.ZnGa₂O₄的热稳定性能非常好。上述结论对研究ZnGa₂O₄基质或掺杂的发光材料具有一定意义。     

Relativistic optics in gravitational lensing: The focus of a cluster and its aberrations

In this article, general idea of focusing is studied within the framework of optics extension into general relativity (covariant optics). In a configuration of static spacetime, the general, mathematically rigorous treatment of rays, wavefronts and caustics of spherical symmetry is presented, particularly with regard to problems of obtaining them within general relativity. An original result is the aberration formulation to covariant optics, whose application is given in this paper; a particular solution of Einstein equations is finally chosen to provide concrete, exact results of cluster focal length and its aberration structure. In this way, a gravitational lensing situation is shown to be a true lens.     

Crystal field analysis of the magnetization curves of R2Fe17 and R2Fe17H3 (R=Tb,Ho,Er)

In this paper the values of the crystalline-electric-field parameters A_nm for R₂Fe₁₇ and R₂Fe₁₇H₃ (R=Tb,Ho,Er) are evaluated by fitting calculations to the magnetization curves measured on the single crystal at several temperatures. The fitted A_nm for R₂Fe₁₇ are strikingly different from those for the corresponding R₂Fe₁₇H₃. The energy gaps between the lowest four energy levels for Ho ions in Ho₂Fe₁₇₂ can be reproduced by using the fitted A_nm and exchange field 2μ_BH_ex, which estimated from the fit of the temperature dependence of the spontaneous magnetization combined with inelastic neutron scattering experiment.     

Study of B c → D π in the perturbative QCD approach

We investigate the branching ratios and direct CP-asymmetries of the and decays in the PQCD approach. All the diagrams with emission topology or annihilation topology are calculated strictly. A branching ratio of 10^-6 and 10^-7 for and decay is predicted, respectively. Because of the different weak phase and strong phase from penguin operator and two kinds of tree operator contributions, we predict a possible large direct CP-violation: and when γ = 55°, which can be tested in the coming LHC. PACS: 13.25.Hw, 12.38.Bx     

Theoretical Research on a Kind of Quantum Left-handed Metamaterial

Recently, research on left-handed materials （LHMs） has attracted considerable attentions. The LHMs are a kind of metameterial which have negative permittivity and negative permeability, which lead to negative refractive index in a frequency range. The LHMs that have been available so far are in the microwave range and are usually composed of classical particles, such as split-ring resonators. Some quantum phenomena such as spontaneous emission of atoms in the LHMs which are considered to be ＇classical background＇ have also been investigated. Many potential applications of LHMs have been proposed, such as superlenses which, in principle, can achieve arbitrary subwavelength resolution.     

Field Quantization and Spontaneous Emission in Left-handed Material

Recently, research on left-handed materials （LHMs） has attracted considerable attentions. The LHMs are a kind of man-made metameterials which have negative permittivity and negative permeability. These metameterials have many novel properties such as inverse light pressure, and reverse Doppler effect, which lead to many potential applications of LHMs such as superlenses which, in principle, can achieve arbitrary subwavelength resolution. However, though the properties mentioned above are seen to be classical, the quantum phenomena in LHMs have also attracted attentions such as the modified spontaneous emission of atoms in LHME.     

新超导体MgCNi3的虚晶掺杂研究

用全势线性缀加平面波方法,考虑局域自旋密度近似研究虚晶掺杂MgCNi3的超导电性和磁性.计算了自旋极化能带结构、体弹性模量和它对压力的导数、原子磁矩 m 及其变化率.计算结果表明,对于电子掺杂的Mg1-xAlxCNi3(0≤x≤0.5), 超导电性和磁涨落随掺杂量的增加逐渐减小.空穴掺杂的Mg1-xNaxCNi3,在x＝0.12处出现铁磁相变,超导电性消失.在MgCNi3少量空穴掺杂区域(0≤x<0.12),表现为超导与磁涨落共存的不稳定状态.     

金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.     

光栅周期包含的Bragg层数对Bragg型凹面衍射光栅的影响

单个衍射光栅周期所包含的Bragg周期层数是连续Bragg齿型凹面衍射光栅的主要参数之一,该参数可改变光栅齿结构,对凹面衍射光栅的分辨力.自由光谱范围及衍射效率有重要影响.本文通过理论分析与仿真模拟,对比了4种不同层数的Bragg型凹面衍射光栅的特性参数.研究结果表明:在衍射光栅尺寸不变的情况下,改变单个光栅周期包含的Bragg周期层数不会显著提高器件主衍射级次的分辨力;单个光栅周期包含的Bragg周期层数与光栅可衍射的级次数成正相关.单周期层数的Bragg凹面衍射光栅的主衍射级次效率最高,其可衍射的级次数最少,且其他衍射级次分散的能量最少;增加单个光栅周期所包含的Bragg周期层数会降低主衍射级次的自由光谱范围.该研究对于设计低插损、高分辨率、宽工作波段的波分复用器或光栅光谱仪具有重要的指导意义.     

Structural and electronic properties of potassium-doped 1,2;8,9-dibenzopentacene superconductor: comparing with doped [7]phenacenes

Polycyclic aromatic hydrocarbons doped by metal have exhibited the potential of high temperature superconductivity. Understanding the basic properties of materials is the key to reveal the superconductivity. Here, a systemically theoretical study has been done to explore crystal structures and electronic properties of pristine and potassium-doped 1,2;8,9-dibenzopentacene, compared with [7]phenacenes case. We determined that vdW-DF2 functional is more suitable to describe the non-local interaction in a molecular crystal. Based on this functional, we predicted the crystal structures and investigated in detail the K atomic positions in a system. It was found that the intralayer doping leads to lower total energy. From the calculated formation energy, for each 1,2;8,9-dibenzopentacene molecule, the doping of two electrons is more stable under the relatively K-poor condition while the doping of four electrons is more stable under the K-rich condition. Between these two phases, the three-electron doping phase stabilises in a narrow region of K chemical potential. Combining with the electronic states at Fermi level, we analysed the reasons of superconductivity enhancement in doped 1,2;8,9-dibenzopentacene. This work further deepens the understanding of 1,2;8,9-dibenzopentacene superconductor.