HIRFL 束流相位测量系统性能的改进

 在研究HIRFL 相位测量系统工作原理的基础上, 用自行设计的电缆电子学长度校正方法校正了探针电缆的长度, 并重新设计了信号预选器和系统控制软件; 利用自行设计的自检系统找出并校正了影响系统测量精度的因素。提高了系统的可靠性和测量精度, 使系统可以投入实际的调束运行。     

Soliton wavelength-division multiplexing system with channel-isolating notch filters

We propose a wavelength-division multiplexing system in which transmission of solitons is stabilized by fixed- or sliding-frequency notch filters (a soliton rail), providing channel isolation. We demonstrate analytically and numerically that a soliton trapped in a channel between two notches is very robust. We also predict an optimum ratio between the channel separation and the soliton's spectral width. The effects of interchannel collisions are considered, and it is demonstrated that these effects can be largely eliminated by notch filters, which require a compensatory gain that is comparable with the basic gain balancing the fiber loss.     

改进加权支持向量机回归方法器件易损性评估

加权支持向量机回归算法,几乎都是以样本输入空间中的一个重要特征量的函数来确定权值,造成了在高维特征空间中作回归可能存在较大误差。针对这一问题,提出利用高维特征空间中的欧基里德距离来确定权值的方法,构造了一种改进的加权支持向量机回归算法,并将其应用到电子器件高功率微波易损性评估中。仿真结果表明：该方法具有比模糊神经网络法、标准支持向量机回归算法和一般的加权支持向量机回归算法更高的预测精度。由于增加了权值的计算过程,相对于标准支持向量机回归和模糊神经网络方法,该方法的效率较低,但与一般的加权支持向量机回归算法相当。     

Ab initio studies on the electronic structure of CeSi5

We investigated the electronic properties of CeSi₅ by band structure calculation based on the density functional theory within LDA, LDA+U, and fully relativistic schemes. The calculated band structure scheme shows that the spin-orbit coupling splits the Ce 4f states into three manifolds. When the on-site Coulomb potential is added to the Ce-derived 4f orbitals, the degeneracy between the f orbitals would be lifted and they are split into lower Hubbard bands and upper Hubbard bands. It was found that quasiparticle mass enhancement inferred by comparing γ to the density of states (DOS) at the Fermi level indicates the effective mass of CeSi₅ is enhanced with the fully relativistic results.     

CHCl3电子吸附速率常数的离子迁移谱

利用电晕放电离子迁移谱, 使用高纯氮气作为载气和迁移气体, 研究了电场强度在200～500 V/cm变化时CHCl₃的解离电子吸附速率常数, 得到样品所对应的电子吸附速率常数为1.26×10^-8～8.24×10^-9 cm³/(molecules s)．利用该装置测量了固定电场下,样品的电子吸附速率常数与样品浓度之间的关系．此外利用所获得的离子迁移谱图得到了不同电场强度下Cl^-与CHCl₃之间的离子分子反应速率常数.     

Chaotic oscillations associated with the breakup of polarization entangled coherent states in a microchip solid-state laser

We demonstrate the breakup of spatial-polarization entangled lasing patterns, which possess vector phase singularities, and the resultant dynamic instabilities featuring chaotic oscillations. The frequency splitting between a pair of Ince-Gauss (IG) lasing modes, originally forming a coherent entanglement state, and a self-excited additional nonorthogonal IG mode through a new class of transverse effect of self-injection pattern seeding, is shown to result in modal-interference-induced modulation at the beat frequency, leading to chaotic oscillations.     

Excited‐state hydrogen bond strengthening of coumarin 153 in ethanol solvent: a TDDFT study

So far, coumarin dyes have been extensively studied with various means to understand their photophysical behaviors and photochemical properties. Here, our performing time‐dependent density functional theory calculation is aimed at exploring the excited‐state hydrogen bonding dynamics of coumarin 153 (C153) in protic ethanol (EtOH) solvent. The calculated results suggest that the excited‐state hydrogen bond C?O?H?O between C?O group and O?H group in the C153‐EtOH complex is strengthened, and the S₀ → S₁ transition of the complex corresponds to the highest occupied molecular orbital (HOMO) hopping to the lowest unoccupied molecular orbital (LUMO). The excited‐state hydrogen bond strengthening has been further confirmed by its larger binding energy in the S₁ state than in the S₀ state. In addition, because of the formation of the hydrogen bond C?O?H?O, a red shift of about 7 nm occurs in the electronic spectra of the C153‐EtOH complex, which is in good accordance with the experiment result. Copyright © 2016 John Wiley & Sons, Ltd.     

Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime

Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of ～30–90 nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-Å electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at ～8.3 eV (～150 nm) and surface guided modes at 3.88 eV (～320 nm), which are in visible/ultra-violet spectral regime above GaN bandgap of ～3.3 eV (～375 nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below ～3.5 eV to the spectral regime further beyond.     

Thermal transport property of investigated by molecular Ge34 and d-Ge dynamics and the Slack＇s equation

In this study, we evaluate the values of lattice thermal conductivity κL of type Ⅱ Ge clathrate （Ge34） and diamond phase Ge crystal （d-Ce） with the equilibrium molecular dynamics （EMD） method and the Slack＇s equation. The key parameters of the Slack＇s equation are derived from the thermodynamic properties obtained from the lattice dynamics （LD） calculations. The empirical Tersoff＇s potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack＇s equation are consistent with the EMD results above 250 K for both Ge34 and d-Ge. In a temperature range of 200-1000 K, the κL value of d-Ge is about several times larger than that of Ge34.