Effect of bias field on the dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals with different orientations

Microdomain-macrodomain transformations and phase transitions in 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ single crystals were investigated by studying their relative permittivity under various dc bias at constant heating and cooling rates. The orientation dependence of the bias field effect was revealed by examining the temperature dependence of relative permittivity as a function of crystal orientation (the 111, 011 and 001 directions) and dc bias field. The crystals have a microdomain rhombohedral ferroelectric state in the ferroelectric phase under zero dc bias. External bias field could modulate the domain state and induce a macrodomain state in the crystals. Also, it is proposed that the dc bias applied along the 001 or 011 direction could induce a tetragonal ferroelectric phase or an orthorhombic ferroelectric phase, respectively, in an intermediate temperature range. PACS 77.80.-e; 77.22.-d; 81.40.-z     

Public-key encryption based on generalized synchronization of coupled map lattices

Currently used public-key cryptosystems are based on difficulties in solving certain numeric theoretic problems, in which the way to predict the private key from the knowledge of the public key is computationally infeasible. Here we propose a method of constructing public-key cryptosystems by generalized synchronization of coupled map lattices, in which the difficulty in predicting the synchronous function is used as the trap-door function to deduce the private key from the public key. In specific, we implement this idea on the method of "Merkle's puzzles," and find that, incorporated with the chaotic dynamics, this traditional method is equipped with some new features and can be practical in certain situations.     

Composition control and electrical properties of PMN-PT thin films around the morphotropic boundary

We have successfully grown (1-x)Pb(Mg_1/3- Nb_1/3)O₃-xPbTiO₃ (PMN-PT) thin films with x=0.3, 0.35 and 0.4 by pulsed laser deposition. X-ray-diffraction studies reveal that the PMN-PT films grown on La_0.5Sr_0.5CoO₃/LaAlO₃ substrates form epitaxial heterostructures. Composition control and remedial measures to compensate for the lead and magnesium losses due to re-evaporation are demonstrated. As a common feature, the as-grown PMN-PT thin films exhibit a self-poling behavior. Their dielectric constants measured at room temperature vary from 1500 to 2500, depending on the PMN to PT ratios. The pyroelectric coefficient of the films varies from 160 to 300 C/m²K. The piezoelectric coefficient d₃₃ is around 27 pm/V in the as-grown 70/30 films. A comparison of these values with the bulk PMN-PT of same compositions implies that the much-reduced piezoelectric properties in the PMN-PT films are primarily due to a substrate-clamping effect. PACS 77.84.-s; 77.65.-j; 77.80.-e     

Leakage current and pyroelectric properties of compositionally graded (Pb,Ca)TiO<Subscript>3</Subscript> films

Highly (100)-oriented, compositionally graded (Pb,Ca)TiO₃ (PCT) thin films with a Ca content from 0 to 24 mol% on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process. The graded structure of the Au/PCT/Pt film capacitor showed a well-saturated hysteresis loop at an applied field of 500 kV/cm with remanent polarization (P_r), and coercive electric field (E_c) values of 9.35 C/cm² and 130 kV/cm, respectively. At 100 kHz, the dielectric constant and dielectric loss of the film were 129 and 0.024, respectively. The leakage current density of the graded PCT film was less than 1.0×10^-7 A/cm² over a voltage range from 0 to 4 V. The conduction current depended on the voltage polarity. At low electric field (110 and 180 kV/cm, respectively, for Pt and Au electrodes biased negatively), the Au/PCT and PCT/Pt interfaces form a Schottky barrier. At high electric field (>110 kV/cm), the Au electrode biased negatively shows space-charge-limited current (SCLC) behavior. The temperature dependencies of the pyroelectric coefficients of the graded PCT film were measured by a dynamic technique. From 20 to 82 °C, the pyroelectric coefficients of graded PCT film remain steady in the range 106 to 118 C/m²K. The detectivity figure of merit (F_D) of the graded PCT film was 6.7×10^-6 Pa^-0.5. PACS 77.80.-s; 77.70.+a; 77.22.-d; 51.50.+v; 68.37.-d     

Ferroelectric properties of Bi3.25−x/3La0.75Ti3−xNbxO12 films prepared by pulsed laser deposition

Bi₄Ti₃O₁₂ (BiT), Bi_3.25La_0.75Ti₃O₁₂ (BLT), Bi_4−x/3Ti_3−xNb_xO₁₂ (BTN) and Bi_3.25−x/3La_0.75Ti_3−xNb_xO₁₂ (BLTN) thin films have been prepared by pulsed laser deposition. BTN and BLTN films exhibit a maximum in the remanent polarization P_r at a Nb content x=0.018. At this Nb content, the BLTN film has a P_r value (25 μC/cm²) that is much higher than that of BiT and a coercive field similar to that of BiT. The polarization of this BLTN film is fatigue-free up to 10⁹ switching cycles. The high fatigue resistance is mainly due to the substitution of Bi³⁺ ions by La³⁺ ions at the A site and the enhanced P_r arises largely from the replacement of Ti⁴⁺ ions by Nb⁵⁺ ions at the B site. The mechanisms behind the effects of the substitution at the two sites are discussed.     

Ultrasonic transducers using electron-irradiated vinylidene fluoride-trifluoroethylene copolymers

Single-element, planar transducers have been fabricated using electron-irradiated poly(vinylidene fluoride-trifluoroethylene) 80/20 mol% copolymers with different electron dosage. Electrical field-induced strain response of copolymer film with 100 Mrad dosage has been studied at 5 kHz and the electrostrictive coefficient was calculated. The transmitting response of the air-backing and epoxy-backing transducers was evaluated with the application of high DC bias voltages. Clear ultrasonic amplitudes and high frequency spectrum (>20 MHz) were observed when driven from a standard ultrasonic voltage source through a decoupling circuit. It has also showed that larger generation of ultrasonic waves will be induced under high DC bias field, which is due to the increase of induced d(33) piezoelectric coefficient. Two different polar bias voltages, positive and negative, were applied to the transducers and inverse waveforms were received, which was coincident with the theoretical analysis of the strain response of electrostrictive film.     

Preparation of epitaxial compositionally graded (Ba1-xSrx)TiO3 thin films with enhanced dielectric properties

Epitaxial compositionally graded (Ba_1-xSr_x)TiO₃ (BST) (0.0x0.25) thin films were deposited on (100) LaAlO₃ substrates by pulsed laser ablation, the substrates having bottom electrodes made of 100-nm-thick conductive La_0.5Sr_0.5CoO₃ (LSCO). Extensive X-ray diffraction, rocking-curve, and -scan studies indicate that the graded films are (100)-oriented and exhibit good in-plane relationships of [010]_BST//[010]_LAO and [001]_BST//[001]_LAO. For the up-graded films with barium concentration (1-x) increasing across the film thickness in the direction from the film/substrate interface to the film surface, the full width at half maximum of the BST film (200) rocking curve and the surface roughness, examined by atomic force microscopy, were larger than those of the down-graded films with barium concentration decreasing from the film/substrate interface to the film surface. The dielectric properties of the graded films, measured using vertical structures, show that at room temperature, the dielectric constant (_r) and dissipation factor (cos) at 100 kHz were 380 and 0.013 for the up-graded films, and 650 and 0.010 for the down-graded films, respectively. The dielectric behavior was enhanced in the down-graded films, which was attributed to the fact that the pure BaTiO₃ layer in the down-graded BST films not only serves as a bottom layer but also acts as an excellent seeding layer for enhancing subsequent film growth, leading to better film crystallinity and larger grain sizes in the down-graded films. The graded BST films undergo a diffuse phase transition, giving a broad, flat capacitance-versus-temperature profile. With such a graded structure, it is possible to build a dielectric thin-film capacitor having a capacitance which has a low temperature dependence over a broad temperature regime. PACS 77.55.+f; 68.55.Jk; 81.15.Fg     

Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications

Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray-diffraction θ-2 θ scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 μm thick AlN film on a (111) Si substrate is observed using an inter-digital electrode. Received: 18 September 2001 / Accepted: 29 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: liujm@nju.edu.cn     

A novel hybrid of Bi-based high-Tc superconductor and molecular complex

Molecular complex HgI2Py2 (Py=pyridine) was intercalated into the Bi-based high-Tc cuprate by intercalative complexation. The intercalation method adopted in this work is based on the new concept, where a neutral ligating agent is diffused into the preintercalated HgI2 layer leading to a charge transfer-type complex formation between the Bi2O2 double layers of Bi2Sr2CaCu2Oy.     

Experimental study of sound propagation in a flexible duct

Propagation of sound in a flexible duct is investigated both theoretically and experimentally. Strong coupling of sound and flexural waves on the duct wall is found when the wall-to-air mass ratio is of the order of unity. The axial phase speed of sound approaches the in vacuo speed of flexural waves (subsonic in this case) at low frequencies. However, a speed higher than the isentropic sound speed in free space (340 m/s) is found beyond a critical frequency which is a function of the mass ratio. Experiments using a duct with a finite section of tensioned membrane are compared with the propagating modes pertaining to the infinite membrane model. Satisfactory quantitative agreement is obtained and the measured phase speed ranges from 8.3 to 1348 m/s. In the moderate frequency range, the theory predicts high spatial damping rate for the subsonic waves, which is consistent with the experimental observation that subsonic waves become increasingly undetectable as the frequency increases. Substantial sound reflection is observed at the interface between the rigid and the flexible segments of the duct without cross-section discontinuity, which, together with the high spatial damping, could form a basis for passive control of low-frequency duct noise.