Longitudinal relaxation of muonium in Ge and GaAs

Longitudinal-field muon-spin depolarization rates in high-purityGe and semiinsulatingGaAs are reported and compared to similar data for intrinsicSi. Depolarization onset temperatures provide a comparison of charge carrier concentrations leading to rapid charge exchange and a shift in the onset, for n-typeGaAs verifies anelectron process. The temperature dependence of the low-field rate constants imply more complicated dynamics inGe than observed earlier inSi. Features near 750K inGaAsTe appear consistent with dissociation of aMu-Te pair.This work was supported by the US National Science Foundation (DMR-8917639 [TLE, BH]), the Science and Engineering Research Council of the UK (EAD, AS, SFJC), the Robert A. Welch Foundation (D-1053 [RLL], and C-1048 [TLE]), and a NATO Collaborative Research Grant (RLL, SFJC, RCD, CS). We wish to thank D.A. Vanderwater of Hewlett Packard for providing theGaAsTe sample.     

RF-μSR study of muonium charge states and dynamics in Si

The radio frequencySR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu^* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 10¹¹ to 10¹⁵ cm^–3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu^* and Mu to a bond centered ⁺ followed at high temperature by charge exchange involving Mu.     

Utilization of four WDM channels with signal remodulation of OFDM-QAM for 10 Gb/s uplink passive optical networks

In this investigation, we experimentally investigate an extended reach (ER) time-division-multiplexed passive optical network (TDM-PON) using four wavelength-multiplexed channels to achieve 16 Gb/s downlink and 10 Gb/s uplink traffic. Each downlink signal uses the highly spectral efficient 4 Gb/s OFDM-QAM, and each uplink signal is generated by signal remodulating the downlink signal via a reflective semiconductor amplifier (RSOA) at 2.5 Gb/s non-return-to-zero (NRZ). In addition, the performance of the proposed ER TDM-PON has also been analyzed and discussed.     

Modelling hydrogen in silicate materials

The expectation that the hydroxyl analogue state of positive muons implanted in quartz should be stabilized by a suitable charge compensation centre is supported by preliminary data. The diamagnetic fraction correlates with aluminium content over the narrow range investigated. This revised version was published online in August 2006 with corrections to the Cover Date.     

Probing magnetic order in heavily doped La2-xSrxNiO4+\delta with μSR

We report μSR measurements on a series of compounds with composition La_2-xSr_xNiO_4+\delta where the net hole concentration x+2\delta is greater than 0.4. A magnetic transition is found in all the samples studied which occurs at a composition‐dependent temperature T_M. Below T_M, clear precession signals are observed in zero applied magnetic field. The possible muon sites are discussed within the context of dipole‐field calculations. This revised version was published online in July 2006 with corrections to the Cover Date.     

Preparation and characterization of a poled nanocrystal and polymer composite PbTiO3/PEKc film for electro-optic applications

Composite thin films of PbTiO₃ nanocrystals and high-transparency PEKc polymer for applications in electro-optical devices were prepared using the spin coating technique. The size of the PbTiO₃ nanocrystals was estimated to be 30–40 nm using a transmission electron microscope. The transmission technique, a simple method for measuring the electro-optic coefficients of poled composite polymer films was developed. The electro-optic coefficient γ₃₃ of poled PbTiO₃/PEKc composite polymer films was measured to be 18.34 pm  V^-1 at 633 nm under room temperature. The index at 633 nm and the dielectric constant at 100 kHz under room temperature were determined to be 1.65248 and 7.32, respectively. The figure of merit F₂=n⁷γ²/ε was estimated to be 1546, showing very good electro-optical properties. Received: 5 February 2002 / Accepted: 12 March 2002 / Published online: 19 July 2002 RID="*" ID="*"Corresponding author. Fax: +852/2788-7791, E-mail: eeytc@cityu.edu.hk