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971.
972.
Photoinduced optical and second-order non-linear optical effects in the interfaces separating In2O3–SiON (O/N ratio equals 1) films doped with A1, Sn and glass substrates were investigated using the photoinduced optical second harmonic generation. The photoinduced effective second-order optical susceptibility deff (at λ=1.76 μm) shows a good correlation with the linear optical susceptibility, particularly with the shift of the absorption edge. The maximal response of the photoinduced optical response signal was observed for the pump–probe delaying time of 34 ps. The performed experimental measurements indicate that the observed effects are mainly caused by the interface potential gradients on the border glass–In2O3–SiON film and by additional polarization due to insertion of the Al and Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigation of thin semiconducting interfacial layers and simultaneously such films may be used as materials for non-linear optical devices.  相似文献   
973.
974.
The Kα to Lα and Kβ to Lβ intensity ratios of seven elements have been measured following photoionization at 59.5 keV by using a Si (Li) detector (FWHM=155 eV at 5.96 keV). The intensity ratios were determined by measuring K and L x-rays emitted from a standard target of a given element. The theoretical values of the Kα to Lα and Kβ to Lβ intensity ratios were calculated using theoretically tabulated values of shell/subshell photoionization cross sections, fluorescence yields, Coster-Kronig transition probabilities, and radiative decay rates for ηKLi≠ and ηKLi=0. The measured values are in good agreement with theoretical results. From Optika i Spektroskopiya, Vol. 97, No. 2, 2004, pp. 186–189. Original English Text Copyright ? 2004 by A. Kü?ük?nder, S?ğüt, E. Kü?ük?nder, Büyükkasap. This article was submitted by the authors in English.  相似文献   
975.
Using two different types of the laddering equations realized simultaneously by the associated Gegenbauer functions, we show that all quantum states corresponding to the motion of a free particle on AdS 2 and S 2 are splitted into infinite direct sums of infinite-and finite-dimensional Hilbert subspaces which represent Lie algebras u(1, 1) and u(2) with infinite- and finite-fold degeneracies, respectively. In addition, it is shown that the representation bases of Lie algebras with rank 1, i.e., gl(2, C), realize the representation of nonunitary parasupersymmetry algebra of arbitrary order. The realization of the representation of parasupersymmetry algebra by the Hilbert subspaces which describe the motion of a free particle on AdS 2 and S 2 with the dynamical symmetry groups U(1, 1) and U(2) are concluded as well.  相似文献   
976.
It is experimentally demonstrated that second-order polarizability gratings preliminarily recorded using bichromatic light in a phosphate glass can be amplified under the action of monochromatic radiation. The amplification effect takes place irrespective of the polarization and direction of propagation of the amplifying radiation and is achieved at various wavelengths. The phenomenon is related to the asymmetry of optical transitions between local centers in an isotropic medium in the presence of electric field. It is theoretically shown that this system may feature the formation of alternating electric field domains with dimensions depending on the grating amplitude.  相似文献   
977.
The process of muon (pion) pair production with small invariant mass in electron-positron high-energy annihilation, accompanied by emission of a hard photon at large angles, is considered. We find that the Drell-Yan picture for the differential cross section is valid in the charge-even experimental setup. Radiative corrections both for the electron block and for the final-state block are taken into account.  相似文献   
978.
We have demonstrated a passively Q-switched operation of Nd:GdVO4 laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.  相似文献   
979.
Capacity Constrained Transit Assignment with Common Lines   总被引:1,自引:0,他引:1  
This paper proposes the use of absorbing Markov chains to solve the capacity constrained transit network loading problem taking common lines into account. The approach handles congested transit networks, where some passengers will not be able to board because of the absence of sufficient space. The model also handles the common lines problem, where choice of route depends on frequency of arrivals. The mathematical formulation of the problem is presented together with a numerical example. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
980.
The synthesis of a specific isotopomer, C6D4H(ortho)-H(ortho)D4C6 of biphenyl is reported. The intramolecular dipolar coupling of the protons leads to a well-resolved single-crystal proton nuclear magnetic resonance (NMR) spectrum and allows one to study the dynamics of the phenyl rings in a unique way. At room temperature and above, the most conspicuous dynamical mode consists of 180° ring flips. The present data together with previous measurements of the total flip rate allow us to conclude that the rings flip almost exclusively independently of each other. Between the incommensurate (IC) phase transition of biphenyl at 38 K andT=250 K, the prominent namical mode consists of oscillatory twists ϕ(t) of the two rings. The data allow us to infer the mean square, (φ2), of these twists. (φ2) is found to grow linearly withT for 50<T<200 K. From the slope of (φ2) vs.T the frequency (the wave number[(v)\tilde]\tilde v) is derived. The result is[(v)\tilde] = 20\tilde v = 20 cm−1. ForT<38 K, the spectra give direct evidence of the IC phase transition and its nature (stripelike rather than quiltlike). The temperature dependence of the magnitude of the order parameter of the IC phase is obtained.  相似文献   
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