Numerical study of vortex shedding from a rotating cylinder immersed in a uniform flow field

A numerical study is made of the unsteady two‐dimensional, incompressible flow past an impulsively started translating and rotating circular cylinder. The Reynolds number (Re) and the rotating‐to‐translating speed ratio (α) are two controlled parameters, and the influence of their different combinations on vortex shedding from the cylinder is investigated by the numerical scheme sketched below. Associated with the streamfunction (ψ)–vorticity (ω) formulation of the Navier–Stokes equations, the Poisson equation for ψ is solved by a Fourier/finite‐analytic, separation of variable approach. This approach allows one to attenuate the artificial far‐field boundary, and also yields a global conditioning on the wall vorticity in response to the no‐slip condition. As for the vorticity transport equation, spatial discretization is done by means of finite difference in which the convection terms are handled with the aid of an ENO (essentially non‐oscillatory)‐like data reconstruction process. Finally, the interior vorticity is updated by an explicit, second‐order Runge–Kutta method. Present computations fall into two categories. One with Re=10³ and α≤3; the other with Re=10⁴ and α≤2. Comparisons with other numerical or physical experiments are included. Copyright © 2000 John Wiley & Sons, Ltd.     

Improvement of M-plane GaN thin film grown on pre-annealing β-LiGaO2 (100) substrate

In this paper, we report the growth of M-plane GaN thin films on LiGaO₂ (100) substrates pre-annealed in vacuum and in air ambient. The surface of M-plane GaN film grown on the LiGaO₂ (100) substrate pre-annealed in air ambient was significantly improved. X-ray diffraction data showed that the M-plane GaN thin film grown on the LiGaO₂ (100) substrate pre-annealed in air ambient has better crystal quality than that grown on the LiGaO₂ (100) substrate pre-annealed in vacuum. In addition, the strain generated between GaN thin film and LiGaO₂ substrate was relaxed when the GaN thin film grew on the LiGaO₂ substrate pre-annealed in air ambient. It revealed that the thermal annealing LiGaO₂ substrate in air ambient can suppress the formation of lithium-rich surface effectively, and then one can grow a high quality M-plane GaN thin film on the LiGaO₂ substrate.     

Synthetic Applications of 3‐(Phenylsulfinyl)‐3‐sulfolene

The title compound 2 was readily prepared by MCPBA oxidation of the sulfide 1. Thermal desulfonylation of 2 gave the sulfoxide‐substituted diene 3. The Diels‐Alder reactions of 3 with various dienophiles gave the cyclized products 4‐9 in good yields. The regiochemistry was found to be dominated by the phenylsulfinyl group, but could be reversed by the presence of a Lewis acid. Deprotonation of 2 by BuLi, followed by the reaction with alkyl halides, gave the substituted 2‐sulfolenes 10. A synthetic application of 10 was demonstrated by converting 10e to the bicyclic product 11.     

Experimental Study of Red-, Green-, and Blue-Based Light Emitting Diodes Visible Light Communications for Micro-Projector Application

In this research, an experimental short-range visible light communication link using red-, green-, and blue-based light-emitting diodes (LEDs) for portable micro-projector applications is presented. A Reconfigurable design of a post-equalizer aimed to improve the inherent narrow modulation bandwidth of red-, green-, and blue-based LEDs has been experimentally implemented, and its effectiveness with optical filters at the receiver is investigated. Reflective liquid-crystal-on-silicon-based micro-projection architecture, widely used in portable micro-projectors, was set up to evaluate the proposed visible light communication system. The measurement results demonstrated that a significant aggregative bandwidth improvement of 162 MHz as well as an aggregative data transmission rate of nearly 400 Mb/s can be achieved by using a non-return-to-zero–on-off keying (NRZ–OOK) modulation scheme based on only one polarization state of incident light without any offline signal processing.     

1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer

This study reports on the realization of 1.3-μm InGaAsP buried-heterostructure (BH) laser diodes (LDs) via an Fe-doped semi-insulating InP layer and an AlInAs electron stopper layer (ESL). Experimentally, the as-cleaved BH LD with an AlInAs ESL exhibited improved characteristics in terms of threshold current, slope efficiency, and maximum light output power at 90 °C as compared to those of the normal BH LD without an AlInAs ESL. In addition, high internal quantum efficiency or reduced threshold current density was observed, indicating increased modal gain in BH LDs fabricated with an AlInAs epilayer on top of the active region. It was also found that the temperature sensitivity of the BH LDs with an AlInAs ESL is more stable than that of the normal BH LDs. These results could be attributed to the suppression of thermal carrier leakage out of strain-compensated multiple-quantum-well by a large conduction-band offset of the AlInAs/InGaAsP heterojunction. Otherwise, without consideration of damping factor or coupling loss, the 3-dB bandwidth of the proposed BH LDs reaches a high value of 15.3 GHz. Finally, this TO-can packaged BH LD shows an eye-opening feature with the extinction ratio of 7.49 dB while operating at 10 Gbit/s at 50 mA.     

Nanotribological behavior of thermal treatment of zinc titanate thin films

We present a study of the nanotribological behavior of ZnTiO₃ films; the surface morphology, stoichiometry, and friction (μ) were analyzed using atomic force microscopy, X‐ray photoelectron spectroscopy, and nanoscratch system. It is confirmed that the measured values of H and μ of the ZnTiO₃ films were in the range from 8.5 ± 0.4 to 5.6 ± 0.4 GPa and from 0.164 to 0.226, respectively. It is suggested that the hexagonal ZnTiO₃ decomposes into cubic Zn₂TiO₄ and rutile TiO₂ based on the thermal treatment; the H, μ, and R_MS were changed owing to the grain growth and recovery that results in a relax crystallinity of ZnTiO₃ films. From X‐ray photoelectron spectroscopy measured, core levels of O 1 can attribute the weaker bonds as well as lower resistance after thermal treatment. The XRD patterns showed that as‐deposited films are mainly amorphous; however, the hexagonal ZnTiO₃ phase was observed with the ZnTiO₃ (104), (110), (116), and (214) peaks from 620 to 820 °C, indicating that there is highly (104)‐oriented ZnTiO₃ on the silicon substrate. Copyright © 2012 John Wiley & Sons, Ltd.     

Dipolar organic pyridyl dyes for dye-sensitized solar cell applications

New dipolar dyes containing arylamine as the electron donor, 2-cyanoacrylic acid as the acceptor, and a conjugated spacer with incorporation of 2,5-pyridyl entity have been synthesized. Photophysical and electrochemical measurements, and theoretical computation were carried on these dyes. The solar cell devices using these dyes as the sensitizers exhibited light-to-electricity efficiencies in the range of 4.28–5.27%, which reaches 60–72% of N719-based device fabricated and measured under similar conditions. Better DSSC performance can be achieved with the dye where pyridine group is attached to thienyl or fluorenyl group because of favorable resonance energy and/or coplanarity for more effective charge transfer.     

Effect of repetition nanoindentation of GaN epilayers on a‐axis sapphire substrates

In this work, gallium nitride (GaN) epilayers were deposited on a‐axis sapphire substrate by means of metal organic chemical vapor deposition (MOCVD). Berkovich nanoindentation was used to explore the repetition pressure‐induced impairment of the GaN film. The observation of load‐displacement vs stress‐strain curves concludes that basal slip is implicated in the deformation on the A plane GaN. The increase in the hardness (H) and elastic modulus (E) was determined from cyclic nanoindentation, and resulted in a crack due to the formation of incipient slip bands and/or the to‐and‐fro motion of mobile dislocation. It is indicated that the generation of individual dislocation and residual deformation of the GaN films are showed by CL mapping analysis. From the morphological studies, it is revealed that the crack was found by means of atomic force microscope (AFM) technique at nine loading/reloading cycles even after the indentation beyond the critical depth on the residual indentation impression. Copyright © 2010 John Wiley & Sons, Ltd.