Solvent isotope effect on the fluorescence of azoalkanes

A study of fluorescence quantum yields and fluorescence lifetimes of the cyclic azoalkanes I and II reveals a striking dependence of Φ_F and τ_F on solvent and on isotopic substitution (OH å OD). A mechanism involving specific deactivation of the fluorescent state from a hydrogen bonded complex is proposed to rationalize the data. The observation that the quantum yield for decomposition of I does not correlate with the variation of fluorescence parameters with solvent and isotopic change leads to the conclusion that the state responsible for photoreaction proceeds the fluorescent state.     

Interactions of 10.6 GeV/nucleon gold nuclei in nuclear emulsion

Stacks of nuclear emulsion were exposed at the Brookhaven AGS to a 10.6 GeV/n beam of gold nuclei in the BNL 868 experiment. A preliminary analysis of the main features of the interactions of these nuclei is reported here and compared with those observed previously at lower energies,E<1 GeV/n. The multiplicity and pseudo-rapidity distributions of the singly charged particles emitted both in central and in minimum bias samples of interactions have been analyzed in order to look for any non random effects indicative of the nuclear state during the interactions. The fragmentation characteristics of the gold projectiles appear to be different at 10.6 GeV/n from those at ≦1 GeV/n incident energy. Fission of the gold projectiles, which was relatively frequent at low energy, is almost entirely suppressed. Some of alpha particles from the projectile are emitted with very large transverse momenta. In gold-emulsion interactions the residual target nuclei are significantly smaller than in oxygen and sulfur interactions in emulsion.

     

ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: synthesis and fundamental studies

We describe the synthesis of a new family of chlorinated Si-Ge hydrides based on the formula ClnH6-nSiGe. Selectively controlled chlorination of H3SiGeH3 is provided by reactions with BCl3 to produce ClH2SiGeH3 (1) and Cl2HSiGeH3 (2). This represents a viable single-step route to the target compounds in commercial yields for semiconductor applications. The built-in Cl functionalities are specifically designed to facilitate selective growth compatible with CMOS processing. Higher order polychlorinated derivatives such as Cl2SiHGeH2Cl (3), Cl2SiHGeHCl2 (4), ClSiH2GeH2Cl (5), and ClSiH2GeHCl2 (6) have also been produced for the first time leading to a new class of highly reactive Si-Ge compounds that are of fundamental and practical interest. Compounds 1-6 are characterized by physical and spectroscopic methods including NMR, FTIR, and mass spectroscopy. The results combined with first principles density functional theory are used to elucidate the structural, thermochemical, and vibrational trends throughout the general sequence of ClnH6-nSiGe and provide insight into the dependence of the reaction kinetics on Cl content in the products. The formation of 1 was also demonstrated by an alternative route based on the reaction of (SO3CF3)SiH2GeH3 and CsCl. Depositions of 1 and 2 at very low temperatures (380-450 degrees C) produce near stoichiometric SiGe films on Si exhibiting monocrystalline microstructures, smooth and continuous surface morphologies, reduced defect densities, and unusual strain properties.