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991.
Effects of South China Sea/western North Pacific summer monsoon on tropospheric biennial oscillation (TBO) 总被引:2,自引:0,他引:2 下载免费PDF全文
Several theories have been developed to explain tropical biennial
oscillation (TBO), as an air--sea interactive system to impact Asian
and global weather and climate,
and some models have been established to produce a TBO. A
simple 5-box model, with almost all the key processes associated with
TBO, can produce a TBO by including air--sea interactions in the
monsoon regions. Despite that, the South China Sea/western North
Pacific summer monsoon (SCS/WNPSM), a very important monsoon
subsystem, is neglected. In this paper, based on the dynamical
framework of 5-box model, the term of SCS/WNPSM has been added and a
6-box model has been developed. Comparing the difference of TBO
sensibilities with several key parameters, air--sea coupling
coefficient α, SST-thermocline feedback coefficient
γ and wind-evaporation feedback coefficient λ,
between the modified model and original model, TBO is more sensible
to the parameters in the new model. The results imply that the
eastern Pacific and local wind-evaporation play more important roles
in the TBO when including SCS/WNPSM. 相似文献
992.
An asymptotic solving method for the periodic solution of a class of disturbed nonlinear evolution equation 下载免费PDF全文
<正>A class of disturbed evolution equation is considered using a simple and valid technique.We first introduce the periodic traveling-wave solution of a corresponding typical evolution equation.Then the approximate solution for an original disturbed evolution equation is obtained using the asymptotic method.We point out that the series of approximate solution is convergent and the accuracy of the asymptotic solution is studied using the fixed point theorem for the functional analysis. 相似文献
993.
994.
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996.
Sr位Nd掺杂对SrBi$lt;sub$gt;2$lt;/sub$gt;Nb$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;9$lt;/sub$gt;性能的影响及机理研究 下载免费PDF全文
采用传统固相法制备了(Sr1-3x/2Ax/2Ndx)Bi2Nb2O9(x=0,0.05,0.1和0.2)陶瓷,并系统研究了Nd离子取代Sr离子对SrBi2Nb2O9性能的影响及其作用机理.研究结果表明:Sr1-3x/2Ax/2NdxBi2Nb2O9的介电常数和介电损耗随温度变化的行为具有明显的离子松弛极化特征.Nd3+对Sr2+的部分取代,导致Sr1-3x/2Ax/2NdxBi2Nb2O9剩余极化强度Pr稍有下降,但其压电系数d33却有所增加,根据铁电热力学理论,这是Nd3+对Sr2+取代导致材料介电常数增大所致.Sr1-3x/2Ax/2NdxBi2Nb2O9的居里温度(TC)没有随Nd含量的增加而变化,拉曼光谱技术分析表明这是其NbO6八面体畸变程度没有发生变化所致.Nd3+取代Sr2+提高了材料的介电常数εr、压电系数d33、机电耦合系数Kp,同时降低了机械品质因数Qm,但是谐振频率温度系数C值没有改变.
关键词:
压电陶瓷
介电性能
压电性能
拉曼光谱 相似文献
997.
In order to avoid stimulated Brillouin scattering and smooth the final focal spot that reaches the D-T capsule, spectral broadening is essential. However, the modulation of spectral structure might result in frequency-to-amplitude modulation (FM-to-AM) conversion. The spatial filter pinhole is used to cut off the high-frequency transmission laser, and to ensure the desired pass. Improper parameter of pinhole would lead a negative impact. Using the spatial filter pinhole, we analyze the characteristic of intensity modulation using several pinholes of improper parameters. We then compare these results with the intensity modulation obtained from an experiment. Experimental diagnosis and design of an appropriate pinhole parameter would be highly beneficial to the field of high-power lasers. 相似文献
998.
本文通过脉冲激光沉积法制备了不同厚度(80nm、320nm、1000nm和2000nm)的YBa2Cu3O7-δ(YBCO)超导薄膜,对它们的剩余应力和临界电流特性进行了对比研究.通过系列的激光显微Raman光谱和磁化曲线测量分别获得了薄膜剩余应力和磁化临界电流密度(Jc)对薄膜厚度的依赖关系.结果显示超导薄膜内剩余应力越小,Jc越高.对于中等厚度的薄膜样品(320nm和1000nm),其膜内剩余应力较小,同时由其特征的磁通匹配场大小推知在该厚度范围内的样品具有较高的线性缺陷密度,从而显示出较高的Jc值. 相似文献
999.
1000.
Recently GaN-based high electron mobility transistors (HEMTs) have
revealed the superior properties of a high breakdown field and high
electron saturation velocity. Reduction of the gate leakage current
is one of the key issues to be solved for their further improvement.
This paper reports that an Al layer as thin as 3 nm was inserted
between the conventional Ni/Au Schottky contact and n-GaN epilayers,
and the Schottky behaviour of Al/Ni/Au contact was investigated
under various annealing conditions by current--voltage (I--V)
measurements. A non-linear fitting method was used to extract the
contact parameters from the I--V characteristic curves.
Experimental results indicate that reduction of the gate leakage
current by as much as four orders of magnitude was successfully
recorded by thermal annealing. And high quality Schottky contact
with a barrier height of 0.875 eV and the lowest reverse-bias
leakage current, respectively, can be obtained under 12 min
annealing at 450°C in N2 ambience. 相似文献