Efficient synthesis of an aldehyde‐capped polythiophene containing fluorinated electron‐withdrawing groups

To incorporate an acceptor type polythiophene segment onto a supramolecular block copolymer for potential light harvesting applications, effective synthetic routes for the end‐functionalized and acceptor‐substituted polythiophenes are critical. The Ullmann coupling reaction can be utilized to obtain electron‐deficient polythiophenes and to attach terminal thiophene units that carry functional groups. In this article, the reactions involving a 2,5‐dibromothiophene monomer containing an electron‐withdrawing fluorinated ester and 5‐bromo‐2‐thiophenecarboxaldehyde (the end‐capper) were studied in detail. It was found that the Ullmann coupling reaction of the dibromide is very fast (completed in a few minutes) and the terminal bromine group does not survive long under the reaction condition. These findings lead to the development of an effective procedure for aldehyde end‐capping of electron‐deficient polythiophenes. Polymers with molecular weights around 4000 Da are routinely obtained. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 41–47, 2007     

Mass Spectral Fragmentation of (S,S)-N,N′-Bis [1-(hydroxymethyl)alkyl]anthracene/Naphthalene-1,8-dicarboxamides under Electron Impact Ionization Conditions

IntroductionN,N′-Bis [1-( hydroxymethyl) alkyl] dicarboxa-mides are important intermediates for the syntheses ofbis-oxazolines, which are a class of the most importantand widely used ligands in catalytic asymmetric reac-tions[1,2]. On determining the str…     

Multiple doubly periodic solutions of semi-linear damped beam equations

The purpose of this work is to investigate the weakened Ambrosetti–Prodi type multiplicity results for weak doubly periodic solutions of damped beam equations. By using the topological degree theory, the author obtains a result which is similar to the result for damped wave equations in the literature.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

Frequency-stabilized semimonolithic frequency doubler with high output power

We present a semimonolithic frequency-doubler from 1080 to 540 nm with 80% doubling efficiency and up to 849-mW output power of green light.     

一个推广的Hardy-Hilbert型不等式及其逆式

本文引入单参数λ及应用Beta函数,给一个Hardy-Hilbert型不等式以具有最佳常数因子的推广,作为应用,给出了它的逆向形式．     

光电倍增管脉冲性能研究

采用外腔式电光开光,调制主动照相探测光源,使光电倍增管处于脉冲工作状态下,以提高光电倍增管的输出幅度和动态范围,改善信号的信噪比,同时避免样品和探测器受长时间强激光照射.对滨松H6780光电倍增管进行了调试,使其线性输出电流由静态的0.1mA提升到脉冲状态的4.4mA,信噪比提高4.5倍.该技术对其他光敏探测有借鉴意义.     

增强型延迟反馈法控制低维混沌系统的解析研究

基于时间延迟反馈控制混沌系统的方法,提出一种增强型控制方案,并利用分析延迟系统产生Hopf分支条件的方法,给出这种方案控制低维连续自治混沌系统时,在达到控制目标的条件下,控制参数的一般解析关系.将这一方案和分析方法应用到两个混沌模型中,结果表明:采用修正的方案可以明显地改善控制混沌的效果和质量;解析分析的结果与实际数值计算的结果一致. 关键词： 延迟反馈 混沌控制 Hopf分支